JP5394766B2 - Soi基板の作製方法 - Google Patents
Soi基板の作製方法 Download PDFInfo
- Publication number
- JP5394766B2 JP5394766B2 JP2009024632A JP2009024632A JP5394766B2 JP 5394766 B2 JP5394766 B2 JP 5394766B2 JP 2009024632 A JP2009024632 A JP 2009024632A JP 2009024632 A JP2009024632 A JP 2009024632A JP 5394766 B2 JP5394766 B2 JP 5394766B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single crystal
- semiconductor film
- crystal semiconductor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 395
- 238000000034 method Methods 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 57
- 239000004065 semiconductor Substances 0.000 claims description 379
- 239000013078 crystal Substances 0.000 claims description 244
- 238000000926 separation method Methods 0.000 claims description 47
- 238000010438 heat treatment Methods 0.000 claims description 46
- 150000002500 ions Chemical class 0.000 claims description 28
- 239000011521 glass Substances 0.000 claims description 23
- 238000011282 treatment Methods 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 16
- 239000007790 solid phase Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 392
- 239000010410 layer Substances 0.000 description 90
- 229910052710 silicon Inorganic materials 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 230000006870 function Effects 0.000 description 24
- 239000012535 impurity Substances 0.000 description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 238000005401 electroluminescence Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000004151 rapid thermal annealing Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 7
- 239000011344 liquid material Substances 0.000 description 7
- -1 oxygen ions Chemical class 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000370 acceptor Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910008051 Si-OH Inorganic materials 0.000 description 3
- 229910006358 Si—OH Inorganic materials 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000001282 organosilanes Chemical class 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Description
本実施の形態では、SOI基板の作製方法の一例に関して図面を参照して説明する。
本実施の形態では、上記実施の形態と異なるSOI基板の作製方法について図面を参照して説明する。具体的には、第2の単結晶半導体膜上に半導体膜を成膜し、成膜と同時にエピタキシャル成長(気相成長)させて第3の単結晶半導体膜を形成する方法に関して上記実施の形態と異なる方法について説明する。
本実施の形態では、上記実施の形態に示した方法で作製したSOI基板を用いて、複数の大面積の単結晶半導体膜を有するSOI基板を作製する方法及びその場合の基板の利用方法について図面を参照して説明する。
上述した実施の形態では、第1のSOI基板100として、一列に配置した複数の第1の単結晶半導体膜103を有するSOI基板を用いた例を示した。本実施の形態では、第1のSOI基板として、複数列並べて配置した第1の単結晶半導体膜を有するSOI基板を用いて、大面積の単結晶半導体膜を有するSOI基板を作製する方法を、図面を用いて説明する。
本実施の形態では、上記実施の形態で作製したSOI基板を用いて、半導体装置を作製する方法を説明する。
101 第1の基板
102 絶縁膜
103 単結晶半導体膜
104 半導体膜
105 絶縁膜
106 単結晶半導体膜
107 半導体膜
108 単結晶半導体膜
109 脆化層
110 絶縁膜
111 基板
113 単結晶半導体膜
120 SOI基板
156 脆化層
157 単結晶半導体基板
Claims (11)
- 絶縁表面を有する第1の基板上に、互いに離間して複数の第1の単結晶半導体膜を設け、
前記第1の基板を覆うように、前記第1の単結晶半導体膜上に半導体膜を形成し、
前記第1の単結晶半導体膜を露出させるように、前記半導体膜の平坦化処理を行い、
前記第1の単結晶半導体膜及び前記半導体膜上に、第1の絶縁膜を形成し、
所定の深さに第1の脆化層が形成された複数の単結晶半導体基板を、前記半導体膜と重畳するように、前記第1の絶縁膜上に重ね合わせ、
熱処理により前記第1の脆化層にて分離することにより、前記第1の絶縁膜上に、複数の第2の単結晶半導体膜を形成し、
前記第2の単結晶半導体膜をマスクとして前記第1の絶縁膜をエッチングして、前記第1の単結晶半導体膜を露出させ、
前記第1の基板上に、前記第1又は第2の単結晶半導体膜をシード層として第3の単結晶半導体膜を形成し、
前記第3の単結晶半導体膜にイオンを導入して、第2の脆化層を形成し、
前記第3の単結晶半導体膜上に、接合層として機能する第2の絶縁膜を形成し、
前記第1の基板と、絶縁表面を有する第2の基板とを重ね合わせて熱処理を行い、前記第2の脆化層にて前記第3の単結晶半導体膜を分離することにより、前記第2の絶縁膜を介して前記第2の基板上に前記第3の単結晶半導体膜の一部を固定することを特徴とするSOI基板の作製方法。 - 請求項1において、
前記第2の脆化層にて分離した後、前記第1の基板上に残存した前記第3の単結晶半導体膜の表面と、前記第2の基板上に固定された第3の単結晶半導体膜の表面の一方又は両方に平坦化処理を行うことを特徴とするSOI基板の作製方法。 - 請求項2において、
前記平坦化処理として、レーザー光を照射することを特徴とするSOI基板の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記第1の基板及び前記第2の基板として、ガラス基板を用いることを特徴とするSOI基板の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記第3の単結晶半導体膜は、前記第1及び第2の単結晶半導体膜上に半導体膜を形成した後、熱処理を行うことにより前記半導体膜を固相成長させて結晶化することにより形成することを特徴とするSOI基板の作製方法。 - 請求項5において、
前記半導体膜として、非晶質半導体膜を用いることを特徴とするSOI基板の作製方法。 - 請求項1乃至請求項6のいずれか一項において、
前記第3の単結晶半導体膜は、前記第1及び第2の単結晶半導体膜上にCVD法を用いて成膜する半導体膜を気相成長させることにより形成することを特徴とするSOI基板の作製方法。 - 請求項1乃至請求項7のいずれか一項において、
前記第2の基板上に形成された単結晶半導体膜にイオンを導入して、第3の脆化層を形成し、
前記第2の基板上に第3の絶縁膜を形成し、
前記第3の絶縁膜を介して前記第2の基板上に、第3の基板を重ね合わせて熱処理を行い、前記第3の脆化層にて分離することにより、前記第3の絶縁膜を介して前記第3の基板上に前記単結晶半導体膜の一部を固定することを特徴とするSOI基板の作製方法。 - 請求項8において、
前記第2の基板上の単結晶半導体膜は、前記第3の単結晶半導体膜上に半導体膜を形成した後、熱処理を行うことにより前記半導体膜を固相成長させて結晶化することにより形成することを特徴とするSOI基板の作製方法。 - 請求項9において、
前記半導体膜として、非晶質半導体膜を用いることを特徴とするSOI基板の作製方法。 - 請求項10において、
前記第2の基板上の単結晶半導体膜は、前記第3の単結晶半導体膜上にCVD法を用いて成膜する半導体膜を気相成長させることにより形成することを特徴とするSOI基板の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009024632A JP5394766B2 (ja) | 2008-02-06 | 2009-02-05 | Soi基板の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008026447 | 2008-02-06 | ||
JP2008026447 | 2008-02-06 | ||
JP2009024632A JP5394766B2 (ja) | 2008-02-06 | 2009-02-05 | Soi基板の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009212505A JP2009212505A (ja) | 2009-09-17 |
JP5394766B2 true JP5394766B2 (ja) | 2014-01-22 |
Family
ID=40932098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009024632A Expired - Fee Related JP5394766B2 (ja) | 2008-02-06 | 2009-02-05 | Soi基板の作製方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7767547B2 (ja) |
JP (1) | JP5394766B2 (ja) |
KR (1) | KR101515793B1 (ja) |
CN (1) | CN101504930B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101504930B (zh) * | 2008-02-06 | 2013-10-16 | 株式会社半导体能源研究所 | Soi衬底的制造方法 |
JP5297219B2 (ja) * | 2008-02-29 | 2013-09-25 | 信越化学工業株式会社 | 単結晶薄膜を有する基板の製造方法 |
JP5654206B2 (ja) * | 2008-03-26 | 2015-01-14 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法及び該soi基板を用いた半導体装置 |
US8048754B2 (en) * | 2008-09-29 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer |
JP2010114431A (ja) * | 2008-10-10 | 2010-05-20 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
JP5611571B2 (ja) * | 2008-11-27 | 2014-10-22 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法及び半導体装置の作製方法 |
US20100216295A1 (en) * | 2009-02-24 | 2010-08-26 | Alex Usenko | Semiconductor on insulator made using improved defect healing process |
JP2011029618A (ja) * | 2009-06-25 | 2011-02-10 | Sumco Corp | Simoxウェーハの製造方法、simoxウェーハ |
US8445317B2 (en) * | 2010-02-19 | 2013-05-21 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor devices |
JP5755931B2 (ja) | 2010-04-28 | 2015-07-29 | 株式会社半導体エネルギー研究所 | 半導体膜の作製方法、電極の作製方法、2次電池の作製方法、および太陽電池の作製方法 |
US8652925B2 (en) | 2010-07-19 | 2014-02-18 | International Business Machines Corporation | Method of fabricating isolated capacitors and structure thereof |
US8946820B2 (en) * | 2011-06-30 | 2015-02-03 | Sharp Kabushiki Kaisha | Method for manufacturing semiconductor substrate, substrate for forming semiconductor substrate, stacked substrate, semiconductor substrate, and electronic device |
CN103280425B (zh) * | 2013-05-27 | 2016-03-30 | 中国科学院物理研究所 | 一种具有隔离层的复合衬底及其制造方法 |
CN109273622B (zh) | 2013-08-06 | 2021-03-12 | 株式会社半导体能源研究所 | 剥离方法 |
DE102016117912A1 (de) * | 2016-09-22 | 2018-03-22 | Nexwafe Gmbh | Verfahren zum Anordnen mehrerer Saatsubstrate an einem Trägerelement und Trägerelement mit Saatsubstraten |
CN108461388B (zh) * | 2018-03-26 | 2020-11-06 | 云谷(固安)科技有限公司 | 一种衬底结构、加工方法和显示装置 |
CN111952240A (zh) * | 2020-08-21 | 2020-11-17 | 中国科学院上海微系统与信息技术研究所 | 具有纳米级空腔结构的soi衬底及其制备方法 |
CN111952238A (zh) * | 2020-08-21 | 2020-11-17 | 中国科学院上海微系统与信息技术研究所 | 具有空腔结构的soi衬底及其制备方法 |
CN114512380B (zh) * | 2022-01-28 | 2023-03-28 | 电子科技大学 | 一种栅极自对准的垂直纳米空气沟道三极管制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JPH0832038A (ja) * | 1994-07-15 | 1996-02-02 | Komatsu Electron Metals Co Ltd | 貼り合わせsoi基板の製造方法および貼り合わせsoi基板 |
US6191007B1 (en) * | 1997-04-28 | 2001-02-20 | Denso Corporation | Method for manufacturing a semiconductor substrate |
JPH1174209A (ja) | 1997-08-27 | 1999-03-16 | Denso Corp | 半導体基板の製造方法 |
US6251754B1 (en) * | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
JP4182323B2 (ja) * | 2002-02-27 | 2008-11-19 | ソニー株式会社 | 複合基板、基板製造方法 |
JP4103447B2 (ja) * | 2002-04-30 | 2008-06-18 | 株式会社Ihi | 大面積単結晶シリコン基板の製造方法 |
US6818529B2 (en) * | 2002-09-12 | 2004-11-16 | Applied Materials, Inc. | Apparatus and method for forming a silicon film across the surface of a glass substrate |
DE102006004870A1 (de) * | 2006-02-02 | 2007-08-16 | Siltronic Ag | Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur |
EP1835533B1 (en) | 2006-03-14 | 2020-06-03 | Soitec | Method for manufacturing compound material wafers and method for recycling a used donor substrate |
CN101504930B (zh) * | 2008-02-06 | 2013-10-16 | 株式会社半导体能源研究所 | Soi衬底的制造方法 |
-
2009
- 2009-01-21 CN CN2009100048673A patent/CN101504930B/zh not_active Expired - Fee Related
- 2009-01-27 US US12/360,419 patent/US7767547B2/en not_active Expired - Fee Related
- 2009-02-05 JP JP2009024632A patent/JP5394766B2/ja not_active Expired - Fee Related
- 2009-02-05 KR KR1020090009328A patent/KR101515793B1/ko active IP Right Grant
-
2010
- 2010-07-28 US US12/844,856 patent/US7939426B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090197392A1 (en) | 2009-08-06 |
CN101504930B (zh) | 2013-10-16 |
CN101504930A (zh) | 2009-08-12 |
US7939426B2 (en) | 2011-05-10 |
US20100291755A1 (en) | 2010-11-18 |
KR101515793B1 (ko) | 2015-05-04 |
JP2009212505A (ja) | 2009-09-17 |
US7767547B2 (en) | 2010-08-03 |
KR20090086165A (ko) | 2009-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5394766B2 (ja) | Soi基板の作製方法 | |
JP5503866B2 (ja) | Soi基板の作製方法 | |
CN101308783B (zh) | 半导体衬底、半导体装置、以及其制造方法 | |
JP2009111373A (ja) | Soi基板の作製方法 | |
JP5500798B2 (ja) | Soi基板の作製方法及び半導体装置の作製方法 | |
JP5486781B2 (ja) | 半導体装置の作製方法 | |
JP5394077B2 (ja) | Soi基板の作製方法 | |
US8420504B2 (en) | Method for manufacturing semiconductor device | |
JP5386193B2 (ja) | Soi基板の作製方法 | |
US20100173472A1 (en) | Method for manufacturing soi substrate and method for manufacturing semiconductor device | |
JP5201967B2 (ja) | 半導体基板の作製方法および半導体装置の作製方法 | |
US20090223628A1 (en) | Manufacturing apparatus of composite substrate and manufacturing method of composite substrate with use of the manufacturing apparatus | |
JP2010147313A (ja) | Soi基板の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120127 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120127 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131001 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131017 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |