JP5386528B2 - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法 Download PDF

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Publication number
JP5386528B2
JP5386528B2 JP2011034102A JP2011034102A JP5386528B2 JP 5386528 B2 JP5386528 B2 JP 5386528B2 JP 2011034102 A JP2011034102 A JP 2011034102A JP 2011034102 A JP2011034102 A JP 2011034102A JP 5386528 B2 JP5386528 B2 JP 5386528B2
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Japan
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channel
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extending
formed above
semiconductor substrate
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JP2011034102A
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Japanese (ja)
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JP2012174818A (ja
JP2012174818A5 (enExample
Inventor
勝治 木下
佳孝 笹子
小林　　孝
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2011034102A priority Critical patent/JP5386528B2/ja
Priority to US13/349,653 priority patent/US8772746B2/en
Publication of JP2012174818A publication Critical patent/JP2012174818A/ja
Publication of JP2012174818A5 publication Critical patent/JP2012174818A5/ja
Application granted granted Critical
Publication of JP5386528B2 publication Critical patent/JP5386528B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2011034102A 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法 Expired - Fee Related JP5386528B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011034102A JP5386528B2 (ja) 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法
US13/349,653 US8772746B2 (en) 2011-02-21 2012-01-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011034102A JP5386528B2 (ja) 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012174818A JP2012174818A (ja) 2012-09-10
JP2012174818A5 JP2012174818A5 (enExample) 2013-04-04
JP5386528B2 true JP5386528B2 (ja) 2014-01-15

Family

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Family Applications (1)

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JP2011034102A Expired - Fee Related JP5386528B2 (ja) 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法

Country Status (2)

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US (1) US8772746B2 (enExample)
JP (1) JP5386528B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102959635B (zh) * 2010-09-08 2015-06-03 株式会社日立制作所 半导体存储器件
JP6122212B2 (ja) * 2014-03-19 2017-04-26 株式会社日立製作所 半導体記憶装置
US9728721B2 (en) * 2014-07-25 2017-08-08 Globalfoundries Singapore Pte. Ltd. Resistive memory device
CN114141772B (zh) * 2020-09-04 2024-07-19 长鑫存储技术有限公司 半导体结构及其制作方法、控制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289815A (ja) * 2001-03-23 2002-10-04 Hitachi Ltd 半導体記憶装置
JP4167513B2 (ja) * 2003-03-06 2008-10-15 シャープ株式会社 不揮発性半導体記憶装置
JP2006108645A (ja) * 2004-10-08 2006-04-20 Ind Technol Res Inst マルチレベル相変化メモリ、及びその動作方法並びに製造方法
JP4654671B2 (ja) * 2004-11-29 2011-03-23 ソニー株式会社 半導体記憶装置
TW200715531A (en) * 2005-07-12 2007-04-16 Sharp Kk Semiconductor memory device and its fabrication method
JP2008159612A (ja) * 2006-12-20 2008-07-10 Toshiba Corp 半導体記憶装置
JP2008160004A (ja) * 2006-12-26 2008-07-10 Toshiba Corp 半導体記憶装置及びその製造方法
JP2008251059A (ja) * 2007-03-29 2008-10-16 Toshiba Corp 不揮発性半導体記憶装置およびそのデータ消去方法
JP2009016400A (ja) * 2007-06-29 2009-01-22 Toshiba Corp 積層配線構造体及びその製造方法並びに半導体装置及びその製造方法
JP5462490B2 (ja) * 2009-01-19 2014-04-02 株式会社日立製作所 半導体記憶装置
JP5419983B2 (ja) * 2009-07-31 2014-02-19 株式会社東芝 不揮発性記憶装置
JP5388814B2 (ja) * 2009-11-24 2014-01-15 株式会社東芝 半導体記憶装置

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Publication number Publication date
JP2012174818A (ja) 2012-09-10
US20120211717A1 (en) 2012-08-23
US8772746B2 (en) 2014-07-08

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