JP2012174818A5 - - Google Patents

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Publication number
JP2012174818A5
JP2012174818A5 JP2011034102A JP2011034102A JP2012174818A5 JP 2012174818 A5 JP2012174818 A5 JP 2012174818A5 JP 2011034102 A JP2011034102 A JP 2011034102A JP 2011034102 A JP2011034102 A JP 2011034102A JP 2012174818 A5 JP2012174818 A5 JP 2012174818A5
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JP
Japan
Prior art keywords
string
selection transistor
current flows
voltage
word line
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JP2011034102A
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English (en)
Japanese (ja)
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JP2012174818A (ja
JP5386528B2 (ja
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Priority to JP2011034102A priority Critical patent/JP5386528B2/ja
Priority claimed from JP2011034102A external-priority patent/JP5386528B2/ja
Priority to US13/349,653 priority patent/US8772746B2/en
Publication of JP2012174818A publication Critical patent/JP2012174818A/ja
Publication of JP2012174818A5 publication Critical patent/JP2012174818A5/ja
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Publication of JP5386528B2 publication Critical patent/JP5386528B2/ja
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JP2011034102A 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法 Expired - Fee Related JP5386528B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011034102A JP5386528B2 (ja) 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法
US13/349,653 US8772746B2 (en) 2011-02-21 2012-01-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011034102A JP5386528B2 (ja) 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012174818A JP2012174818A (ja) 2012-09-10
JP2012174818A5 true JP2012174818A5 (enExample) 2013-04-04
JP5386528B2 JP5386528B2 (ja) 2014-01-15

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Family Applications (1)

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JP2011034102A Expired - Fee Related JP5386528B2 (ja) 2011-02-21 2011-02-21 半導体記憶装置およびその製造方法

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US (1) US8772746B2 (enExample)
JP (1) JP5386528B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102959635B (zh) * 2010-09-08 2015-06-03 株式会社日立制作所 半导体存储器件
JP6122212B2 (ja) * 2014-03-19 2017-04-26 株式会社日立製作所 半導体記憶装置
US9728721B2 (en) * 2014-07-25 2017-08-08 Globalfoundries Singapore Pte. Ltd. Resistive memory device
CN114141772B (zh) * 2020-09-04 2024-07-19 长鑫存储技术有限公司 半导体结构及其制作方法、控制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289815A (ja) * 2001-03-23 2002-10-04 Hitachi Ltd 半導体記憶装置
JP4167513B2 (ja) * 2003-03-06 2008-10-15 シャープ株式会社 不揮発性半導体記憶装置
JP2006108645A (ja) * 2004-10-08 2006-04-20 Ind Technol Res Inst マルチレベル相変化メモリ、及びその動作方法並びに製造方法
JP4654671B2 (ja) * 2004-11-29 2011-03-23 ソニー株式会社 半導体記憶装置
TW200715531A (en) * 2005-07-12 2007-04-16 Sharp Kk Semiconductor memory device and its fabrication method
JP2008159612A (ja) * 2006-12-20 2008-07-10 Toshiba Corp 半導体記憶装置
JP2008160004A (ja) * 2006-12-26 2008-07-10 Toshiba Corp 半導体記憶装置及びその製造方法
JP2008251059A (ja) * 2007-03-29 2008-10-16 Toshiba Corp 不揮発性半導体記憶装置およびそのデータ消去方法
JP2009016400A (ja) * 2007-06-29 2009-01-22 Toshiba Corp 積層配線構造体及びその製造方法並びに半導体装置及びその製造方法
JP5462490B2 (ja) * 2009-01-19 2014-04-02 株式会社日立製作所 半導体記憶装置
JP5419983B2 (ja) * 2009-07-31 2014-02-19 株式会社東芝 不揮発性記憶装置
JP5388814B2 (ja) * 2009-11-24 2014-01-15 株式会社東芝 半導体記憶装置

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