JP5372578B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5372578B2
JP5372578B2 JP2009094877A JP2009094877A JP5372578B2 JP 5372578 B2 JP5372578 B2 JP 5372578B2 JP 2009094877 A JP2009094877 A JP 2009094877A JP 2009094877 A JP2009094877 A JP 2009094877A JP 5372578 B2 JP5372578 B2 JP 5372578B2
Authority
JP
Japan
Prior art keywords
transistor
transistors
distance
semiconductor device
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009094877A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010245432A5 (https=
JP2010245432A (ja
Inventor
貴文 蔵本
康隆 中柴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009094877A priority Critical patent/JP5372578B2/ja
Priority to US12/756,699 priority patent/US8217459B2/en
Publication of JP2010245432A publication Critical patent/JP2010245432A/ja
Publication of JP2010245432A5 publication Critical patent/JP2010245432A5/ja
Priority to US13/493,579 priority patent/US8803237B2/en
Application granted granted Critical
Publication of JP5372578B2 publication Critical patent/JP5372578B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009094877A 2009-04-09 2009-04-09 半導体装置 Active JP5372578B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009094877A JP5372578B2 (ja) 2009-04-09 2009-04-09 半導体装置
US12/756,699 US8217459B2 (en) 2009-04-09 2010-04-08 Semiconductor device
US13/493,579 US8803237B2 (en) 2009-04-09 2012-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009094877A JP5372578B2 (ja) 2009-04-09 2009-04-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2010245432A JP2010245432A (ja) 2010-10-28
JP2010245432A5 JP2010245432A5 (https=) 2012-05-24
JP5372578B2 true JP5372578B2 (ja) 2013-12-18

Family

ID=42933696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009094877A Active JP5372578B2 (ja) 2009-04-09 2009-04-09 半導体装置

Country Status (2)

Country Link
US (2) US8217459B2 (https=)
JP (1) JP5372578B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5372578B2 (ja) * 2009-04-09 2013-12-18 ルネサスエレクトロニクス株式会社 半導体装置
JP2013110269A (ja) * 2011-11-21 2013-06-06 Samsung Electro-Mechanics Co Ltd Ｃｍｏｓ集積回路及び増幅回路

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772536A (en) * 1967-09-20 1973-11-13 Trw Inc Digital cell for large scale integration
JPS56125854A (en) * 1980-03-10 1981-10-02 Nec Corp Integrated circuit
JPS6114744A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体装置
US5298774A (en) * 1990-01-11 1994-03-29 Mitsubishi Denki Kabushiki Kaisha Gate array system semiconductor integrated circuit device
US5055716A (en) * 1990-05-15 1991-10-08 Siarc Basic cell for bicmos gate array
JP2619119B2 (ja) * 1990-06-21 1997-06-11 株式会社東芝 半導体集積回路
US5175512A (en) * 1992-02-28 1992-12-29 Avasem Corporation High speed, power supply independent CMOS voltage controlled ring oscillator with level shifting circuit
US5557363A (en) * 1993-03-16 1996-09-17 Olympus Optical Co., Ltd. CMOS-analog IC for controlling camera and camera system using the same
JPH07235616A (ja) * 1993-12-28 1995-09-05 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP3282375B2 (ja) * 1994-05-25 2002-05-13 株式会社デンソー 相補型絶縁ゲート電界効果トランジスタ
JP3725911B2 (ja) * 1994-06-02 2005-12-14 株式会社ルネサステクノロジ 半導体装置
US5821769A (en) * 1995-04-21 1998-10-13 Nippon Telegraph And Telephone Corporation Low voltage CMOS logic circuit with threshold voltage control
JP3229809B2 (ja) * 1995-08-31 2001-11-19 三洋電機株式会社 半導体装置
US5990502A (en) * 1995-12-29 1999-11-23 Lsi Logic Corporation High density gate array cell architecture with metallization routing tracks having a variable pitch
JP4253052B2 (ja) * 1997-04-08 2009-04-08 株式会社東芝 半導体装置
JP3993927B2 (ja) * 1997-12-22 2007-10-17 沖電気工業株式会社 静電破壊保護回路
JP2000133725A (ja) * 1998-10-26 2000-05-12 Mitsubishi Electric Corp 半導体記憶装置
CA2266062C (en) * 1999-03-31 2004-03-30 Peter Gillingham Dynamic content addressable memory cell
JP2002214306A (ja) * 2001-01-15 2002-07-31 Hitachi Ltd 半導体集積回路
JP2002228906A (ja) 2001-02-01 2002-08-14 Olympus Optical Co Ltd 鏡枠装置
JP3983067B2 (ja) * 2001-03-19 2007-09-26 Ｎｅｃエレクトロニクス株式会社 半導体集積回路の静電保護回路
JP4031423B2 (ja) * 2003-10-29 2008-01-09 株式会社東芝 半導体集積回路
JP2005167536A (ja) * 2003-12-02 2005-06-23 Renesas Technology Corp 通信用半導体集積回路および無線通信システム
JP4801323B2 (ja) 2004-02-13 2011-10-26 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4280672B2 (ja) * 2004-05-07 2009-06-17 富士通株式会社 半導体集積回路
TW200618283A (en) 2004-06-24 2006-06-01 Koninkl Philips Electronics Nv High frequency transistor layout for low source drain capacitance
JP2006013061A (ja) * 2004-06-24 2006-01-12 Matsushita Electric Ind Co Ltd 半導体装置
US20060071270A1 (en) 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
WO2006131986A1 (ja) * 2005-06-10 2006-12-14 Fujitsu Limited 半導体装置、半導体システム、および半導体装置の製造方法
JP2007036216A (ja) * 2005-06-24 2007-02-08 Semiconductor Energy Lab Co Ltd 半導体装置及び無線通信システム
JP4986459B2 (ja) * 2006-01-24 2012-07-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2008085117A (ja) 2006-09-28 2008-04-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2008252003A (ja) * 2007-03-30 2008-10-16 Mitsumi Electric Co Ltd 半導体集積回路
JP5510862B2 (ja) * 2009-03-10 2014-06-04 ルネサスエレクトロニクス株式会社 半導体装置
JP5375952B2 (ja) * 2009-03-31 2013-12-25 日本電気株式会社 半導体装置
JP5372578B2 (ja) * 2009-04-09 2013-12-18 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US8217459B2 (en) 2012-07-10
US20120248543A1 (en) 2012-10-04
US20100258874A1 (en) 2010-10-14
US8803237B2 (en) 2014-08-12
JP2010245432A (ja) 2010-10-28

Similar Documents

Publication Publication Date Title
US7456447B2 (en) Semiconductor integrated circuit device
US20070252217A1 (en) Semiconductor device
US20080157222A1 (en) Rf integrated circuit device
JP5122212B2 (ja) 半導体装置
JP2009290197A (ja) 集積回路のシールリング構造
TW200427056A (en) Electrostatic discharge device
JP2005045016A (ja) 半導体集積回路
JP2018200916A (ja) 半導体装置
CN109300891B (zh) 静电保护元件以及半导体装置
JP4215482B2 (ja) 静電保護回路及び半導体装置
US7239005B2 (en) Semiconductor device with bypass capacitor
JP5372578B2 (ja) 半導体装置
KR101743864B1 (ko) 수직형 씨모스 인버터 소자
US7723801B2 (en) Semiconductor device and method of fabricating the same, and nor gate circuit using the semiconductor device
JP4426996B2 (ja) 半導体装置および半導体装置の製造方法
JP5339484B2 (ja) 半導体装置およびバイパスキャパシタモジュール
JP2007157892A (ja) 半導体集積回路およびその製造方法
JP2007019413A (ja) 保護回路用半導体装置
JP5401056B2 (ja) 半導体装置
JP2009038100A (ja) 半導体装置
JP2004119767A (ja) 半導体装置の製造方法
JP2011034992A (ja) 半導体装置
US7317238B2 (en) Intrinsic decoupling capacitor
JP5293696B2 (ja) 半導体装置
US8362539B2 (en) Semiconductor device and semiconductor package including the same

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120402

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120402

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130618

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130620

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130910

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130918

R150 Certificate of patent or registration of utility model

Ref document number: 5372578

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350