JP5346445B2 - ケミカルメカニカル研磨パッド - Google Patents

ケミカルメカニカル研磨パッド Download PDF

Info

Publication number
JP5346445B2
JP5346445B2 JP2007138565A JP2007138565A JP5346445B2 JP 5346445 B2 JP5346445 B2 JP 5346445B2 JP 2007138565 A JP2007138565 A JP 2007138565A JP 2007138565 A JP2007138565 A JP 2007138565A JP 5346445 B2 JP5346445 B2 JP 5346445B2
Authority
JP
Japan
Prior art keywords
polishing
polymer
polymer matrix
bulk
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007138565A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007313640A5 (enExample
JP2007313640A (ja
Inventor
メアリー・ジョー・カルプ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DuPont Electronic Materials Holding Inc filed Critical DuPont Electronic Materials Holding Inc
Publication of JP2007313640A publication Critical patent/JP2007313640A/ja
Publication of JP2007313640A5 publication Critical patent/JP2007313640A5/ja
Application granted granted Critical
Publication of JP5346445B2 publication Critical patent/JP5346445B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
JP2007138565A 2006-05-25 2007-05-25 ケミカルメカニカル研磨パッド Active JP5346445B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/442,076 2006-05-25
US11/442,076 US7169030B1 (en) 2006-05-25 2006-05-25 Chemical mechanical polishing pad

Publications (3)

Publication Number Publication Date
JP2007313640A JP2007313640A (ja) 2007-12-06
JP2007313640A5 JP2007313640A5 (enExample) 2012-12-06
JP5346445B2 true JP5346445B2 (ja) 2013-11-20

Family

ID=37681809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007138565A Active JP5346445B2 (ja) 2006-05-25 2007-05-25 ケミカルメカニカル研磨パッド

Country Status (7)

Country Link
US (1) US7169030B1 (enExample)
JP (1) JP5346445B2 (enExample)
KR (1) KR101360654B1 (enExample)
CN (1) CN100540224C (enExample)
DE (1) DE102007024460B4 (enExample)
FR (1) FR2901498B1 (enExample)
TW (1) TWI402334B (enExample)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7445847B2 (en) * 2006-05-25 2008-11-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US8479523B2 (en) * 2006-05-26 2013-07-09 General Electric Company Method for gas turbine operation during under-frequency operation through use of air extraction
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7371160B1 (en) 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
US7569268B2 (en) * 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US20090062414A1 (en) * 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) * 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
US20100035529A1 (en) 2008-08-05 2010-02-11 Mary Jo Kulp Chemical mechanical polishing pad
JP5323447B2 (ja) * 2008-10-29 2013-10-23 大和化成工業株式会社 研磨砥石
US8303375B2 (en) 2009-01-12 2012-11-06 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
KR101352235B1 (ko) * 2009-05-27 2014-01-15 로저스코포레이션 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법
US8257544B2 (en) * 2009-06-10 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having a low defect integral window
US8697239B2 (en) 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad
US8551201B2 (en) * 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
JP5606083B2 (ja) * 2010-01-29 2014-10-15 日本発條株式会社 独泡ウレタンシート及びその製造方法
WO2012056512A1 (ja) * 2010-10-26 2012-05-03 東洋ゴム工業株式会社 研磨パッド及びその製造方法
MY164897A (en) * 2010-10-26 2018-01-30 Rohm & Haas Elect Materials Cmp Holdings Inc Polishing pad and method for producing same
US8512427B2 (en) 2011-09-29 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Acrylate polyurethane chemical mechanical polishing layer
US20150059254A1 (en) * 2013-09-04 2015-03-05 Dow Global Technologies Llc Polyurethane polishing pad
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9731398B2 (en) * 2014-08-22 2017-08-15 Rohm And Haas Electronic Materials Cmp Holding, Inc. Polyurethane polishing pad
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US9481070B2 (en) * 2014-12-19 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-stability polyurethane polishing pad
DE102015220090B4 (de) * 2015-01-14 2021-02-18 Siltronic Ag Verfahren zum Abrichten von Poliertüchern
US9630293B2 (en) 2015-06-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad composite polishing layer formulation
US9457449B1 (en) 2015-06-26 2016-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with composite polishing layer
US9539694B1 (en) 2015-06-26 2017-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composite polishing layer chemical mechanical polishing pad
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10086494B2 (en) 2016-09-13 2018-10-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High planarization efficiency chemical mechanical polishing pads and methods of making
US10208154B2 (en) 2016-11-30 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Formulations for chemical mechanical polishing pads and CMP pads made therewith
PT3589673T (pt) 2017-03-03 2021-04-21 Dow Global Technologies Llc Espuma de elastômero de poliuretano de baixa densidade com repercussão de alta esfera
CN106891246B (zh) * 2017-03-30 2019-05-07 湖北鼎龙控股股份有限公司 一种用于半导体、光学材料和磁性材料表面平坦化的化学机械抛光垫
US10596763B2 (en) 2017-04-21 2020-03-24 Applied Materials, Inc. Additive manufacturing with array of energy sources
KR101835087B1 (ko) * 2017-05-29 2018-03-06 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법
US10391606B2 (en) 2017-06-06 2019-08-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
KR101949905B1 (ko) * 2017-08-23 2019-02-19 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
US11179822B2 (en) 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
KR102054309B1 (ko) * 2018-04-17 2019-12-10 에스케이씨 주식회사 다공성 연마 패드 및 이의 제조방법
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11331767B2 (en) 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
KR102277418B1 (ko) * 2019-05-21 2021-07-14 에스케이씨솔믹스 주식회사 가교 밀도가 향상된 연마패드 및 이의 제조방법
US11638978B2 (en) * 2019-06-10 2023-05-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-debris fluopolymer composite CMP polishing pad
CN110170917A (zh) * 2019-07-10 2019-08-27 蓝思科技（长沙）有限公司 一种抛光衬垫及其制备方法
CN110528287B (zh) * 2019-08-08 2022-03-08 安徽安利材料科技股份有限公司 一种毛刷式高耐用化学机械抛光聚氨酯材料及其制备方法
KR102177748B1 (ko) * 2019-11-28 2020-11-11 에스케이씨 주식회사 다공성 연마 패드 및 이의 제조방법
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
KR102572960B1 (ko) * 2021-06-10 2023-09-01 에프엔에스테크 주식회사 복수의 패턴 구조체를 포함하는 연마 패드
CN117247739A (zh) * 2023-09-20 2023-12-19 上海宗易工贸有限公司 一种半导体晶片抛光材料及其制备方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577386A (en) * 1968-10-07 1971-05-04 Minnesota Mining & Mfg Product and process
JPS5480397A (en) 1977-12-09 1979-06-27 Ihara Chem Ind Co Ltd Production of polyurethane elastomer
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5814409A (en) 1994-05-10 1998-09-29 Asahi Kasei Kogyo Kabushiki Kaisha Expanded fluorine type resin products and a preparation process thereof
US6648733B2 (en) * 1997-04-04 2003-11-18 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US6022268A (en) 1998-04-03 2000-02-08 Rodel Holdings Inc. Polishing pads and methods relating thereto
WO1998045087A1 (en) * 1997-04-04 1998-10-15 Rodel Holdings, Inc. Improved polishing pads and methods relating thereto
US6682402B1 (en) * 1997-04-04 2004-01-27 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US7718102B2 (en) 1998-06-02 2010-05-18 Praxair S.T. Technology, Inc. Froth and method of producing froth
US6514301B1 (en) 1998-06-02 2003-02-04 Peripheral Products Inc. Foam semiconductor polishing belts and pads
US6022903A (en) 1998-07-09 2000-02-08 Arco Chemical Technology L.P. Permanent gas blown microcellular polyurethane elastomers
US6095902A (en) * 1998-09-23 2000-08-01 Rodel Holdings, Inc. Polyether-polyester polyurethane polishing pads and related methods
US6267644B1 (en) 1998-11-06 2001-07-31 Beaver Creek Concepts Inc Fixed abrasive finishing element having aids finishing method
US6454634B1 (en) 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
US6860802B1 (en) 2000-05-27 2005-03-01 Rohm And Haas Electric Materials Cmp Holdings, Inc. Polishing pads for chemical mechanical planarization
US6736709B1 (en) 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
KR100905266B1 (ko) * 2000-12-01 2009-06-29 도요 고무 고교 가부시키가이샤 연마 패드
JP4763161B2 (ja) * 2001-06-19 2011-08-31 善二郎 小柳津 研磨パッド又はバフ材、これに用いる研磨用ポリ尿素弾性硬質フォーム及びその製造方法
CN1318469C (zh) * 2002-11-18 2007-05-30 东省A&T株式会社 具有微孔的聚氨酯泡沫的制备方法和由此获得的抛光垫
JP2004303280A (ja) 2003-03-28 2004-10-28 Hoya Corp 情報記録媒体用ガラス基板の製造方法
US7074115B2 (en) 2003-10-09 2006-07-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
SG111222A1 (en) * 2003-10-09 2005-05-30 Rohm & Haas Elect Mat Polishing pad
US20050171224A1 (en) 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad

Also Published As

Publication number Publication date
TW200813199A (en) 2008-03-16
KR20070114018A (ko) 2007-11-29
TWI402334B (zh) 2013-07-21
CN101077569A (zh) 2007-11-28
KR101360654B1 (ko) 2014-02-07
FR2901498A1 (fr) 2007-11-30
CN100540224C (zh) 2009-09-16
FR2901498B1 (fr) 2010-09-03
DE102007024460A1 (de) 2007-11-29
JP2007313640A (ja) 2007-12-06
US7169030B1 (en) 2007-01-30
DE102007024460B4 (de) 2021-12-16

Similar Documents

Publication Publication Date Title
JP5346445B2 (ja) ケミカルメカニカル研磨パッド
JP5346446B2 (ja) ケミカルメカニカル研磨パッド
KR101526010B1 (ko) 화학 기계적 연마 패드
US7414080B2 (en) Polyurethane polishing pad
US7074115B2 (en) Polishing pad
EP2151299B1 (en) Chemical mechanical polishing pad
KR102502964B1 (ko) 조절된-팽창 cmp 패드캐스팅방법
US9452507B2 (en) Controlled-viscosity CMP casting method
JP4722446B2 (ja) 研磨パッド

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100518

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100518

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120419

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120424

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120724

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120727

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120823

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120828

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120921

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120926

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121024

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20121024

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130402

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130702

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130730

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130819

R150 Certificate of patent or registration of utility model

Ref document number: 5346445

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350