JP5342386B2 - イオン発生装置のソースハウジングに堆積したフッ素化合物を除去する方法およびイオン発生装置 - Google Patents

イオン発生装置のソースハウジングに堆積したフッ素化合物を除去する方法およびイオン発生装置 Download PDF

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Publication number
JP5342386B2
JP5342386B2 JP2009216241A JP2009216241A JP5342386B2 JP 5342386 B2 JP5342386 B2 JP 5342386B2 JP 2009216241 A JP2009216241 A JP 2009216241A JP 2009216241 A JP2009216241 A JP 2009216241A JP 5342386 B2 JP5342386 B2 JP 5342386B2
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Japan
Prior art keywords
chamber
filament
gas
power source
fluorine
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Expired - Fee Related
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JP2009216241A
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English (en)
Japanese (ja)
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JP2011065898A5 (enExample
JP2011065898A (ja
Inventor
清宏 津留
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Seiko Instruments Inc
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Seiko Instruments Inc
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Publication date
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Priority to JP2009216241A priority Critical patent/JP5342386B2/ja
Priority to US12/807,852 priority patent/US9384943B2/en
Publication of JP2011065898A publication Critical patent/JP2011065898A/ja
Publication of JP2011065898A5 publication Critical patent/JP2011065898A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2009216241A 2009-09-17 2009-09-17 イオン発生装置のソースハウジングに堆積したフッ素化合物を除去する方法およびイオン発生装置 Expired - Fee Related JP5342386B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009216241A JP5342386B2 (ja) 2009-09-17 2009-09-17 イオン発生装置のソースハウジングに堆積したフッ素化合物を除去する方法およびイオン発生装置
US12/807,852 US9384943B2 (en) 2009-09-17 2010-09-15 Ion generating apparatus and method of removing a fluorine compound deposited in a source housing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009216241A JP5342386B2 (ja) 2009-09-17 2009-09-17 イオン発生装置のソースハウジングに堆積したフッ素化合物を除去する方法およびイオン発生装置

Publications (3)

Publication Number Publication Date
JP2011065898A JP2011065898A (ja) 2011-03-31
JP2011065898A5 JP2011065898A5 (enExample) 2012-08-30
JP5342386B2 true JP5342386B2 (ja) 2013-11-13

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JP2009216241A Expired - Fee Related JP5342386B2 (ja) 2009-09-17 2009-09-17 イオン発生装置のソースハウジングに堆積したフッ素化合物を除去する方法およびイオン発生装置

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US (1) US9384943B2 (enExample)
JP (1) JP5342386B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3092954B2 (ja) 1990-01-29 2000-09-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 低圧水銀放電ランプ点灯動作に適した回路

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5950855B2 (ja) * 2013-03-19 2016-07-13 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入装置のクリーニング方法
CN106611690A (zh) * 2015-10-22 2017-05-03 中芯国际集成电路制造(北京)有限公司 减少或防止在离子注入机的离子源内形成沉积物的方法
CN107293469B (zh) * 2017-06-26 2019-03-01 武汉华星光电半导体显示技术有限公司 电离室、离子植入设备及离子植入方法
CN111069188B (zh) * 2018-10-18 2021-09-14 汉辰科技股份有限公司 离子布植机内部的氟化表面的清理
KR20220008420A (ko) * 2020-07-13 2022-01-21 삼성전자주식회사 가스 공급 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06290723A (ja) * 1993-03-30 1994-10-18 Canon Inc イオンビーム装置
JP3487002B2 (ja) * 1995-02-06 2004-01-13 石川島播磨重工業株式会社 イオン源
JP4182535B2 (ja) * 1999-05-27 2008-11-19 株式会社Ｉｈｉ セルフクリ−ニングイオンドーピング装置およびその方法
JP3732697B2 (ja) * 1999-12-09 2006-01-05 住友イートンノバ株式会社 イオン注入装置及びイオンビームラインのクリーニング方法
JP3516262B2 (ja) * 1999-12-09 2004-04-05 住友イートンノバ株式会社 イオン源
JP5652582B2 (ja) * 2007-07-31 2015-01-14 アクセリス テクノロジーズ インコーポレーテッド ハイブリッドイオン源
US7812321B2 (en) * 2008-06-11 2010-10-12 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a multimode ion source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3092954B2 (ja) 1990-01-29 2000-09-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 低圧水銀放電ランプ点灯動作に適した回路

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Publication number Publication date
US20110062346A1 (en) 2011-03-17
JP2011065898A (ja) 2011-03-31
US9384943B2 (en) 2016-07-05

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