JP5326281B2 - 半導体搭載用配線基板、その製造方法、及び半導体パッケージ - Google Patents
半導体搭載用配線基板、その製造方法、及び半導体パッケージ Download PDFInfo
- Publication number
- JP5326281B2 JP5326281B2 JP2007552901A JP2007552901A JP5326281B2 JP 5326281 B2 JP5326281 B2 JP 5326281B2 JP 2007552901 A JP2007552901 A JP 2007552901A JP 2007552901 A JP2007552901 A JP 2007552901A JP 5326281 B2 JP5326281 B2 JP 5326281B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- wiring board
- substrate
- wiring
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 270
- 238000004519 manufacturing process Methods 0.000 title description 78
- 239000000463 material Substances 0.000 claims abstract description 91
- 230000010354 integration Effects 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 422
- 239000000758 substrate Substances 0.000 description 246
- 238000000034 method Methods 0.000 description 125
- 239000010408 film Substances 0.000 description 116
- 229910000679 solder Inorganic materials 0.000 description 104
- 239000000843 powder Substances 0.000 description 59
- 229910052751 metal Inorganic materials 0.000 description 55
- 239000002184 metal Substances 0.000 description 55
- 229920005989 resin Polymers 0.000 description 51
- 239000011347 resin Substances 0.000 description 51
- 239000004020 conductor Substances 0.000 description 43
- 239000002245 particle Substances 0.000 description 31
- 238000003825 pressing Methods 0.000 description 19
- 229910002056 binary alloy Inorganic materials 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 17
- 238000007639 printing Methods 0.000 description 17
- 238000011161 development Methods 0.000 description 16
- 238000007747 plating Methods 0.000 description 16
- 239000010949 copper Substances 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 239000011230 binding agent Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 10
- 230000008901 benefit Effects 0.000 description 10
- 230000004907 flux Effects 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000002923 metal particle Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 238000005553 drilling Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000004760 aramid Substances 0.000 description 5
- 229920003235 aromatic polyamide Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004744 fabric Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000004745 nonwoven fabric Substances 0.000 description 4
- 239000012766 organic filler Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017518 Cu Zn Inorganic materials 0.000 description 2
- 229910017755 Cu-Sn Inorganic materials 0.000 description 2
- 229910017752 Cu-Zn Inorganic materials 0.000 description 2
- 229910017927 Cu—Sn Inorganic materials 0.000 description 2
- 229910017943 Cu—Zn Inorganic materials 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 2
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 2
- -1 copper Chemical class 0.000 description 2
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007306 functionalization reaction Methods 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920006259 thermoplastic polyimide Polymers 0.000 description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- JGPMMRGNQUBGND-UHFFFAOYSA-N idebenone Chemical compound COC1=C(OC)C(=O)C(CCCCCCCCCCO)=C(C)C1=O JGPMMRGNQUBGND-UHFFFAOYSA-N 0.000 description 1
- 229960004135 idebenone Drugs 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
- H05K3/4694—Partitioned multilayer circuits having adjacent regions with different properties, e.g. by adding or inserting locally circuit layers having a higher circuit density
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/117—Pads along the edge of rigid circuit boards, e.g. for pluggable connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0263—Details about a collection of particles
- H05K2201/0272—Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0352—Differences between the conductors of different layers of a multilayer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09845—Stepped hole, via, edge, bump or conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09972—Partitioned, e.g. portions of a PCB dedicated to different functions; Boundary lines therefore; Portions of a PCB being processed separately or differently
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0425—Solder powder or solder coated metal powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/061—Lamination of previously made multilayered subassemblies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
Description
Claims (1)
- 絶縁膜と、前記絶縁膜中に形成された配線と、前記絶縁膜の表裏面において表面を露出して設けられ、且つ、その側面の少なくとも一部が前記絶縁膜に埋設されている複数個の電極パッドと、前記配線と前記電極パッドとを接続するビアとを有し、
前記絶縁膜中に形成された配線同士を接続する少なくとも1つのビアは、前記配線と前記電極パッドを接続するビアを形成する第1の材料とは異なる第2の材料を含み、
前記絶縁膜は、配線基板の表面に位置する第1の絶縁層と、配線基板の裏面に位置する第2の絶縁層と、配線基板の内部に位置する第3の絶縁層と、前記第1の絶縁層と前記第3の絶縁層との間及び前記第2の絶縁層と前記第3の絶縁層との間の少なくとも一方に設けられた第4の絶縁層とを有し、
前記第3の絶縁層には、前記第3の絶縁層の両表面に埋設された複数個の配線と、これらの配線を相互に接続するビアとが設けられ、
前記第4の絶縁層には、前記第4の絶縁層に埋設された配線と、ビアとが形成され、
前記第1の絶縁層、前記第2の絶縁層、前記第3の絶縁層、及び前記第4の絶縁層は、互いに異なる材料で形成される
半導体搭載用配線基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007552901A JP5326281B2 (ja) | 2006-01-06 | 2006-12-20 | 半導体搭載用配線基板、その製造方法、及び半導体パッケージ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006001921 | 2006-01-06 | ||
JP2006001921 | 2006-01-06 | ||
JP2007552901A JP5326281B2 (ja) | 2006-01-06 | 2006-12-20 | 半導体搭載用配線基板、その製造方法、及び半導体パッケージ |
PCT/JP2006/325348 WO2007077735A1 (ja) | 2006-01-06 | 2006-12-20 | 半導体搭載用配線基板、その製造方法、及び半導体パッケージ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007077735A1 JPWO2007077735A1 (ja) | 2009-06-11 |
JP5326281B2 true JP5326281B2 (ja) | 2013-10-30 |
Family
ID=38228091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007552901A Expired - Fee Related JP5326281B2 (ja) | 2006-01-06 | 2006-12-20 | 半導体搭載用配線基板、その製造方法、及び半導体パッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090046441A1 (ja) |
JP (1) | JP5326281B2 (ja) |
CN (1) | CN101356641B (ja) |
WO (1) | WO2007077735A1 (ja) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007034402B4 (de) * | 2006-12-14 | 2014-06-18 | Advanpack Solutions Pte. Ltd. | Halbleiterpackung und Herstellungsverfahren dafür |
US10074553B2 (en) | 2007-12-03 | 2018-09-11 | STATS ChipPAC Pte. Ltd. | Wafer level package integration and method |
US9460951B2 (en) * | 2007-12-03 | 2016-10-04 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of wafer level package integration |
JP4981712B2 (ja) * | 2008-02-29 | 2012-07-25 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体パッケージの製造方法 |
WO2009113198A1 (ja) * | 2008-03-14 | 2009-09-17 | イビデン株式会社 | インターポーザー及びインターポーザーの製造方法 |
JP4876272B2 (ja) * | 2008-04-02 | 2012-02-15 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 印刷回路基板及びその製造方法 |
JP2010010500A (ja) * | 2008-06-30 | 2010-01-14 | Hitachi Ltd | 銅回路部品およびその製造方法 |
US8237061B2 (en) * | 2009-07-23 | 2012-08-07 | Lexmark International, Inc. | Z-directed filter components for printed circuit boards |
US8273996B2 (en) * | 2009-07-23 | 2012-09-25 | Lexmark International, Inc. | Z-directed connector components for printed circuit boards |
US8198547B2 (en) * | 2009-07-23 | 2012-06-12 | Lexmark International, Inc. | Z-directed pass-through components for printed circuit boards |
US8198548B2 (en) * | 2009-07-23 | 2012-06-12 | Lexmark International, Inc. | Z-directed capacitor components for printed circuit boards |
US8278568B2 (en) * | 2009-07-23 | 2012-10-02 | Lexmark International, Inc. | Z-directed variable value components for printed circuit boards |
US8735734B2 (en) | 2009-07-23 | 2014-05-27 | Lexmark International, Inc. | Z-directed delay line components for printed circuit boards |
US20110017581A1 (en) * | 2009-07-23 | 2011-01-27 | Keith Bryan Hardin | Z-Directed Switch Components for Printed Circuit Boards |
US20110017504A1 (en) * | 2009-07-23 | 2011-01-27 | Keith Bryan Hardin | Z-Directed Ferrite Bead Components for Printed Circuit Boards |
US20110017502A1 (en) * | 2009-07-23 | 2011-01-27 | Keith Bryan Hardin | Z-Directed Components for Printed Circuit Boards |
US20110024165A1 (en) | 2009-07-31 | 2011-02-03 | Raytheon Company | Systems and methods for composite structures with embedded interconnects |
JP2011096900A (ja) * | 2009-10-30 | 2011-05-12 | Fujitsu Ltd | 導電体およびプリント配線板並びにそれらの製造方法 |
KR20110113980A (ko) * | 2010-04-12 | 2011-10-19 | 삼성전자주식회사 | 필름을 포함한 다층 인쇄회로기판 및 그 제조 방법 |
US8826640B2 (en) | 2010-11-12 | 2014-09-09 | Raytheon Company | Flight vehicles including electrically-interconnective support structures and methods for the manufacture thereof |
WO2012099600A1 (en) * | 2011-01-21 | 2012-07-26 | Lexmark International, Inc. | Z-directed ferrite bead components for printed circuit boards |
JP2012209148A (ja) * | 2011-03-30 | 2012-10-25 | Sony Corp | 導電性粒子、導電性ペースト、及び、回路基板 |
TWI601250B (zh) | 2011-07-22 | 2017-10-01 | 先進封裝技術私人有限公司 | 用於製造半導體封裝元件之半導體結構及其製造方法 |
US8790520B2 (en) | 2011-08-31 | 2014-07-29 | Lexmark International, Inc. | Die press process for manufacturing a Z-directed component for a printed circuit board |
US8752280B2 (en) | 2011-09-30 | 2014-06-17 | Lexmark International, Inc. | Extrusion process for manufacturing a Z-directed component for a printed circuit board |
US9078374B2 (en) | 2011-08-31 | 2015-07-07 | Lexmark International, Inc. | Screening process for manufacturing a Z-directed component for a printed circuit board |
US8658245B2 (en) | 2011-08-31 | 2014-02-25 | Lexmark International, Inc. | Spin coat process for manufacturing a Z-directed component for a printed circuit board |
US9009954B2 (en) | 2011-08-31 | 2015-04-21 | Lexmark International, Inc. | Process for manufacturing a Z-directed component for a printed circuit board using a sacrificial constraining material |
US8943684B2 (en) * | 2011-08-31 | 2015-02-03 | Lexmark International, Inc. | Continuous extrusion process for manufacturing a Z-directed component for a printed circuit board |
WO2013035515A1 (ja) * | 2011-09-07 | 2013-03-14 | Tdk株式会社 | 積層型コイル部品 |
US8780576B2 (en) * | 2011-09-14 | 2014-07-15 | Invensas Corporation | Low CTE interposer |
CN103066051B (zh) | 2011-10-20 | 2017-03-01 | 先进封装技术私人有限公司 | 封装基板及其制作工艺、半导体元件封装结构及制作工艺 |
JP5372112B2 (ja) * | 2011-11-04 | 2013-12-18 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体パッケージの製造方法 |
TWI500124B (zh) * | 2011-11-29 | 2015-09-11 | Advanpack Solutions Pte Ltd | 基板結構、半導體封裝元件及基板結構之製造方法 |
CN102548197B (zh) * | 2012-01-30 | 2016-08-03 | 华为技术有限公司 | 一种高速印制电路板 |
US8822840B2 (en) | 2012-03-29 | 2014-09-02 | Lexmark International, Inc. | Z-directed printed circuit board components having conductive channels for controlling transmission line impedance |
US8830692B2 (en) | 2012-03-29 | 2014-09-09 | Lexmark International, Inc. | Ball grid array systems for surface mounting an integrated circuit using a Z-directed printed circuit board component |
US8822838B2 (en) | 2012-03-29 | 2014-09-02 | Lexmark International, Inc. | Z-directed printed circuit board components having conductive channels for reducing radiated emissions |
US8912452B2 (en) | 2012-03-29 | 2014-12-16 | Lexmark International, Inc. | Z-directed printed circuit board components having different dielectric regions |
US9030017B2 (en) | 2012-11-13 | 2015-05-12 | Invensas Corporation | Z-connection using electroless plating |
CN203151864U (zh) * | 2013-03-05 | 2013-08-21 | 奥特斯(中国)有限公司 | 印制电路板 |
KR101585554B1 (ko) * | 2014-01-22 | 2016-01-14 | 앰코 테크놀로지 코리아 주식회사 | 임베디드 트레이스 기판과 그의 범프 형성 방법 |
CN103745936B (zh) * | 2014-02-08 | 2016-08-17 | 华进半导体封装先导技术研发中心有限公司 | 扇出型方片级封装的制作方法 |
US9832866B2 (en) * | 2015-06-29 | 2017-11-28 | Samsung Electro-Mechanics Co., Ltd. | Multilayered substrate and method of manufacturing the same |
US10455708B2 (en) | 2015-06-29 | 2019-10-22 | Samsung Electro-Mechanics Co., Ltd. | Multilayered substrate and method for manufacturing the same |
CN104966709B (zh) | 2015-07-29 | 2017-11-03 | 恒劲科技股份有限公司 | 封装基板及其制作方法 |
CN105934085A (zh) * | 2016-06-28 | 2016-09-07 | 广东欧珀移动通信有限公司 | Pcb板及具有其的移动终端 |
CN107148161A (zh) * | 2017-05-27 | 2017-09-08 | 中国运载火箭技术研究院 | 电子元器件管脚尺寸转换器及其制作方法 |
KR102321438B1 (ko) * | 2017-07-28 | 2021-11-04 | 엘지이노텍 주식회사 | 인쇄회로기판 |
US11032917B2 (en) * | 2018-06-08 | 2021-06-08 | Unimicron Technology Corp. | Circuit carrier board and manufacturing method thereof |
US11167375B2 (en) | 2018-08-10 | 2021-11-09 | The Research Foundation For The State University Of New York | Additive manufacturing processes and additively manufactured products |
JP2021052941A (ja) * | 2019-09-27 | 2021-04-08 | 株式会社平和 | 遊技機 |
US11721603B2 (en) * | 2020-10-15 | 2023-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated fan out method utilizing a filler-free insulating material |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111536A (ja) * | 2002-09-17 | 2004-04-08 | Nec Electronics Corp | 多層配線基板の製造方法 |
JP2005050882A (ja) * | 2003-07-29 | 2005-02-24 | Kyocera Corp | 積層型配線基板および電気装置並びにその実装構造 |
JP2005294496A (ja) * | 2004-03-31 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 配線基板の連結構造体及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6010768A (en) * | 1995-11-10 | 2000-01-04 | Ibiden Co., Ltd. | Multilayer printed circuit board, method of producing multilayer printed circuit board and resin filler |
US6207259B1 (en) * | 1998-11-02 | 2001-03-27 | Kyocera Corporation | Wiring board |
WO2004066697A1 (ja) * | 2003-01-20 | 2004-08-05 | Fujikura Ltd. | 多層配線板およびその製造方法 |
JP4203435B2 (ja) * | 2003-05-16 | 2009-01-07 | 日本特殊陶業株式会社 | 多層樹脂配線基板 |
KR100619348B1 (ko) * | 2004-09-21 | 2006-09-12 | 삼성전기주식회사 | 무전해 니켈 도금을 이용한 패키지 기판의 제조 방법 |
-
2006
- 2006-12-20 WO PCT/JP2006/325348 patent/WO2007077735A1/ja active Application Filing
- 2006-12-20 CN CN2006800503926A patent/CN101356641B/zh not_active Expired - Fee Related
- 2006-12-20 US US12/160,132 patent/US20090046441A1/en not_active Abandoned
- 2006-12-20 JP JP2007552901A patent/JP5326281B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111536A (ja) * | 2002-09-17 | 2004-04-08 | Nec Electronics Corp | 多層配線基板の製造方法 |
JP2005050882A (ja) * | 2003-07-29 | 2005-02-24 | Kyocera Corp | 積層型配線基板および電気装置並びにその実装構造 |
JP2005294496A (ja) * | 2004-03-31 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 配線基板の連結構造体及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101356641A (zh) | 2009-01-28 |
WO2007077735A1 (ja) | 2007-07-12 |
CN101356641B (zh) | 2011-05-18 |
JPWO2007077735A1 (ja) | 2009-06-11 |
US20090046441A1 (en) | 2009-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5326281B2 (ja) | 半導体搭載用配線基板、その製造方法、及び半導体パッケージ | |
JP3961537B2 (ja) | 半導体搭載用配線基板の製造方法、及び半導体パッケージの製造方法 | |
JP4055717B2 (ja) | 半導体装置およびその製造方法 | |
KR100987688B1 (ko) | 프린트 배선 기판 및 프린트 배선 기판의 제조 방법 | |
US8035035B2 (en) | Multi-layer wiring board and method of manufacturing the same | |
TWI459871B (zh) | Built-in parts wiring board, built-in parts wiring board manufacturing methods | |
TWI436717B (zh) | 可內設功能元件之電路板及其製造方法 | |
JP5018826B2 (ja) | 電子デバイスおよびその製造方法 | |
JP4073945B1 (ja) | 多層配線基板の製造方法 | |
JP2014239186A (ja) | 配線基板及び配線基板の製造方法 | |
JP2001237512A (ja) | 両面回路基板およびこれを用いた多層配線基板ならびに両面回路基板の製造方法 | |
KR20050077270A (ko) | 상하도전층의 도통부를 갖는 반도체장치 및 그 제조방법 | |
US9935053B2 (en) | Electronic component integrated substrate | |
JP2009016377A (ja) | 多層配線板及び多層配線板製造方法 | |
JP2007096337A (ja) | 半導体搭載用配線基板、半導体パッケージ、及びその製造方法 | |
JP2009004813A (ja) | 半導体搭載用配線基板 | |
JP4324732B2 (ja) | 半導体装置の製造方法 | |
CN108305864B (zh) | 端子 | |
JP2012169486A (ja) | 基材、配線板、基材の製造方法及び配線板の製造方法 | |
US9673063B2 (en) | Terminations | |
TWI420989B (zh) | 印刷電路板及其製造方法 | |
JP4429280B2 (ja) | 半導体搭載用配線基板の製造方法、及び半導体装置の製造方法 | |
JP4429281B2 (ja) | 半導体搭載用配線基板の製造方法 | |
JP2010040891A (ja) | 部品内蔵配線板 | |
JP2005005435A (ja) | 実装基板及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090415 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120509 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120705 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120914 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121019 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130327 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130620 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130703 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130708 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130703 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5326281 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |