JP5301385B2 - 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体および電気回路接続用バンプの製造方法 - Google Patents

金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体および電気回路接続用バンプの製造方法 Download PDF

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JP5301385B2
JP5301385B2 JP2009178187A JP2009178187A JP5301385B2 JP 5301385 B2 JP5301385 B2 JP 5301385B2 JP 2009178187 A JP2009178187 A JP 2009178187A JP 2009178187 A JP2009178187 A JP 2009178187A JP 5301385 B2 JP5301385 B2 JP 5301385B2
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Prior art keywords
particles
metal
silver
metal member
copper
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Japanese (ja)
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JP2010131669A5 (enExample
JP2010131669A (ja
Inventor
実 一色
康全 工藤
涼子 増田
靖啓 小林
英知 浅見
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Nihon Handa Co Ltd
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Nihon Handa Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/11505—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz

Landscapes

  • Adhesives Or Adhesive Processes (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
JP2009178187A 2008-10-29 2009-07-30 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体および電気回路接続用バンプの製造方法 Active JP5301385B2 (ja)

Priority Applications (1)

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JP2009178187A JP5301385B2 (ja) 2008-10-29 2009-07-30 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体および電気回路接続用バンプの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008278760 2008-10-29
JP2008278760 2008-10-29
JP2009178187A JP5301385B2 (ja) 2008-10-29 2009-07-30 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体および電気回路接続用バンプの製造方法

Publications (3)

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JP2010131669A5 JP2010131669A5 (enExample) 2012-02-09
JP5301385B2 true JP5301385B2 (ja) 2013-09-25

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Cited By (2)

* Cited by examiner, † Cited by third party
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US10941304B2 (en) 2016-04-04 2021-03-09 Nichia Corporation Metal powder sintering paste and method of producing the same, and method of producing conductive material
US20210280551A1 (en) * 2018-09-07 2021-09-09 Rohm Co., Ltd. Bonding structure, semiconductor device, and bonding structure formation method

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JP5811314B2 (ja) * 2010-06-16 2015-11-11 国立研究開発法人物質・材料研究機構 金属ナノ粒子ペースト、並びに金属ナノ粒子ペーストを用いた電子部品接合体、ｌｅｄモジュール及びプリント配線板の回路形成方法
WO2012053034A1 (ja) * 2010-10-20 2012-04-26 ニホンハンダ株式会社 有機物被覆金属粒子の加熱焼結性の評価方法、加熱焼結性金属ペーストの製造方法、および金属製部材接合体の製造方法
KR102713298B1 (ko) * 2010-11-03 2024-10-04 알파 어셈블리 솔루션스 인크. 소결 재료 및 이를 이용한 부착 방법
JP2012161828A (ja) * 2011-02-08 2012-08-30 Mitsubishi Materials Corp フラックス、はんだペースト及び実装基板の製造方法
CN102655030B (zh) * 2011-03-02 2015-07-15 韩国电子通信研究院 导电组合物、含其的硅太阳能电池、及其制造方法
JP6032399B2 (ja) * 2011-07-26 2016-11-30 荒川化学工業株式会社 鉛フリーはんだペースト用フラックス及び鉛フリーはんだペースト
US10369667B2 (en) 2012-03-05 2019-08-06 Namics Corporation Sintered body made from silver fine particles
JP5936407B2 (ja) * 2012-03-26 2016-06-22 株式会社日立製作所 パワーモジュール製造方法
JP5934561B2 (ja) * 2012-04-06 2016-06-15 株式会社アルバック 導電性金属ペースト
JP5975269B2 (ja) * 2012-06-07 2016-08-23 日亜化学工業株式会社 発光装置の製造方法
WO2014002949A1 (ja) * 2012-06-25 2014-01-03 イビデン株式会社 接合基板及びその製造方法ならびに接合基板を用いた半導体モジュール及びその製造方法
JP5856038B2 (ja) * 2012-10-31 2016-02-09 三ツ星ベルト株式会社 スクリーン印刷用導電性接着剤並びに無機素材の接合体及びその製造方法
JP6070092B2 (ja) * 2012-11-12 2017-02-01 三菱マテリアル株式会社 パワーモジュール及びパワーモジュールの製造方法
JP6108987B2 (ja) * 2013-06-28 2017-04-05 古河電気工業株式会社 接続構造体
JP5916674B2 (ja) * 2013-08-30 2016-05-11 株式会社タムラ製作所 ジェットディスペンサー用はんだ組成物
JP6282616B2 (ja) 2014-07-30 2018-02-21 Ｄｏｗａエレクトロニクス株式会社 銀粉およびその製造方法
EP3188314B1 (en) * 2014-08-29 2021-07-07 Mitsui Mining & Smelting Co., Ltd. Conductor connection structure, method for producing same, conductive composition, and electronic component module
JP6396189B2 (ja) * 2014-11-27 2018-09-26 日東電工株式会社 導電性フィルム状接着剤、フィルム状接着剤付きダイシングテープ及び半導体装置の製造方法
JP6284510B2 (ja) * 2015-08-21 2018-02-28 古河電気工業株式会社 金属粒子の分散溶液および接合構造体の製造方法
JP6659026B2 (ja) * 2015-10-14 2020-03-04 国立大学法人大阪大学 銅粒子を用いた低温接合方法
JP6927850B2 (ja) * 2017-10-27 2021-09-01 京セラ株式会社 接合構造および半導体パッケージ
EP3950175B1 (en) * 2019-03-29 2025-06-04 Mitsui Mining & Smelting Co., Ltd. Bonding material and uses therof
CN114300411B (zh) * 2021-11-11 2024-10-15 中国科学院深圳先进技术研究院 一种复合材料及其制作方法、半导体封装结构
CN114453578B (zh) * 2022-01-24 2023-12-05 西安隆基乐叶光伏科技有限公司 一种改性铜粉及其改性方法和导电浆料

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JPH0625031B2 (ja) * 1989-12-22 1994-04-06 三菱マテリアル株式会社 粉体焼結体の作成方法
JPH03264602A (ja) * 1990-03-14 1991-11-25 Isuzu Motors Ltd アルミニウム焼結体
JP4834848B2 (ja) * 2001-05-30 2011-12-14 Ｄｏｗａエレクトロニクス株式会社 低温焼成用銅粉または導電ペースト用銅粉
US7766218B2 (en) * 2005-09-21 2010-08-03 Nihon Handa Co., Ltd. Pasty silver particle composition, process for producing solid silver, solid silver, joining method, and process for producing printed wiring board
JP4849253B2 (ja) * 2007-02-19 2012-01-11 トヨタ自動車株式会社 接合方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10941304B2 (en) 2016-04-04 2021-03-09 Nichia Corporation Metal powder sintering paste and method of producing the same, and method of producing conductive material
US11634596B2 (en) 2016-04-04 2023-04-25 Nichia Corporation Metal powder sintering paste and method of producing the same, and method of producing conductive material
US12125607B2 (en) 2016-04-04 2024-10-22 Nichia Corporation Metal powder sintering paste and method of producing the same, and method of producing conductive material
US20210280551A1 (en) * 2018-09-07 2021-09-09 Rohm Co., Ltd. Bonding structure, semiconductor device, and bonding structure formation method

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