JP5298691B2 - 炭化ケイ素半導体装置およびその製造方法 - Google Patents

炭化ケイ素半導体装置およびその製造方法 Download PDF

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Publication number
JP5298691B2
JP5298691B2 JP2008198351A JP2008198351A JP5298691B2 JP 5298691 B2 JP5298691 B2 JP 5298691B2 JP 2008198351 A JP2008198351 A JP 2008198351A JP 2008198351 A JP2008198351 A JP 2008198351A JP 5298691 B2 JP5298691 B2 JP 5298691B2
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silicon carbide
groove
side wall
insulating film
semiconductor layer
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Japanese (ja)
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JP2010040564A5 (enExample
JP2010040564A (ja
Inventor
美紗子 穂永
真 原田
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2008198351A priority Critical patent/JP5298691B2/ja
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Publication of JP2010040564A5 publication Critical patent/JP2010040564A5/ja
Priority to US13/858,904 priority patent/US20130224941A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008198351A 2008-07-31 2008-07-31 炭化ケイ素半導体装置およびその製造方法 Active JP5298691B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008198351A JP5298691B2 (ja) 2008-07-31 2008-07-31 炭化ケイ素半導体装置およびその製造方法
US13/858,904 US20130224941A1 (en) 2008-07-31 2013-04-08 Silicon carbide semiconductor device and method of manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008198351A JP5298691B2 (ja) 2008-07-31 2008-07-31 炭化ケイ素半導体装置およびその製造方法

Publications (3)

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JP2010040564A JP2010040564A (ja) 2010-02-18
JP2010040564A5 JP2010040564A5 (enExample) 2010-04-02
JP5298691B2 true JP5298691B2 (ja) 2013-09-25

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011092808A1 (ja) * 2010-01-27 2013-05-30 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5564781B2 (ja) * 2008-07-07 2014-08-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
CA2777675A1 (en) 2010-01-19 2011-07-28 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method of manufacturing thereof
JP5707770B2 (ja) * 2010-08-03 2015-04-30 住友電気工業株式会社 半導体装置およびその製造方法
CN102971853B (zh) 2010-08-03 2016-06-29 住友电气工业株式会社 半导体器件及其制造方法
WO2012026089A1 (ja) 2010-08-27 2012-03-01 国立大学法人奈良先端科学技術大学院大学 ＳｉＣ半導体素子
JP2012209422A (ja) * 2011-03-30 2012-10-25 Sumitomo Electric Ind Ltd Ｉｇｂｔ
JP5637916B2 (ja) * 2011-03-31 2014-12-10 トヨタ自動車株式会社 半導体装置及びその製造方法
JP5668576B2 (ja) 2011-04-01 2015-02-12 住友電気工業株式会社 炭化珪素半導体装置
JP2012253293A (ja) * 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 半導体装置
JP5699878B2 (ja) 2011-09-14 2015-04-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2013069964A (ja) 2011-09-26 2013-04-18 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP6017127B2 (ja) * 2011-09-30 2016-10-26 株式会社東芝 炭化珪素半導体装置
JP5764046B2 (ja) 2011-11-21 2015-08-12 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5920010B2 (ja) 2012-05-18 2016-05-18 住友電気工業株式会社 半導体装置
JP6064366B2 (ja) 2012-05-18 2017-01-25 住友電気工業株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450123B2 (ja) * 1999-11-17 2010-04-14 株式会社デンソー 炭化珪素半導体装置
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
JP2003095797A (ja) * 2001-09-26 2003-04-03 Toshiba Corp 単結晶材料の製造方法及び電子装置の製造方法
JP2005136386A (ja) * 2003-10-09 2005-05-26 Matsushita Electric Ind Co Ltd 炭化珪素−酸化物積層体，その製造方法及び半導体装置
JP5017768B2 (ja) * 2004-05-31 2012-09-05 富士電機株式会社 炭化珪素半導体素子
JP4549167B2 (ja) * 2004-11-25 2010-09-22 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP5167593B2 (ja) * 2006-03-23 2013-03-21 富士電機株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011092808A1 (ja) * 2010-01-27 2013-05-30 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法

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