JP5298112B2 - 溶存窒素濃度のモニタリング方法 - Google Patents

溶存窒素濃度のモニタリング方法 Download PDF

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Publication number
JP5298112B2
JP5298112B2 JP2010283078A JP2010283078A JP5298112B2 JP 5298112 B2 JP5298112 B2 JP 5298112B2 JP 2010283078 A JP2010283078 A JP 2010283078A JP 2010283078 A JP2010283078 A JP 2010283078A JP 5298112 B2 JP5298112 B2 JP 5298112B2
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JP
Japan
Prior art keywords
dissolved
concentration
nitrogen concentration
oxygen concentration
dissolved nitrogen
Prior art date
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Application number
JP2010283078A
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English (en)
Japanese (ja)
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JP2012132708A5 (enExample
JP2012132708A (ja
Inventor
照男 榛原
悦子 田邊
眞佐志 内部
良弘 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
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Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010283078A priority Critical patent/JP5298112B2/ja
Application filed by Siltronic AG filed Critical Siltronic AG
Priority to CN201180061112.2A priority patent/CN103261885B/zh
Priority to KR1020137018767A priority patent/KR101516905B1/ko
Priority to MYPI2013001645A priority patent/MY168210A/en
Priority to PCT/EP2011/072639 priority patent/WO2012084610A1/en
Priority to US13/995,568 priority patent/US8778085B2/en
Priority to SG2013030630A priority patent/SG189963A1/en
Priority to EP11805808.0A priority patent/EP2656064B1/en
Publication of JP2012132708A publication Critical patent/JP2012132708A/ja
Publication of JP2012132708A5 publication Critical patent/JP2012132708A5/ja
Application granted granted Critical
Publication of JP5298112B2 publication Critical patent/JP5298112B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/18—Water
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing
    • Y10T436/176152—Total nitrogen determined
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y10T436/207497—Molecular oxygen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y10T436/207497—Molecular oxygen
    • Y10T436/209163—Dissolved or trace oxygen or oxygen content of a sealed environment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
JP2010283078A 2010-12-20 2010-12-20 溶存窒素濃度のモニタリング方法 Active JP5298112B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010283078A JP5298112B2 (ja) 2010-12-20 2010-12-20 溶存窒素濃度のモニタリング方法
KR1020137018767A KR101516905B1 (ko) 2010-12-20 2011-12-13 용존 질소 농도 모니터링 방법, 기판 세정 방법, 및 기판 세정 장치
MYPI2013001645A MY168210A (en) 2010-12-20 2011-12-13 Dissolved nitrogen concentration monitoring method, substrate cleaning method, and substrate cleaning apparatus
PCT/EP2011/072639 WO2012084610A1 (en) 2010-12-20 2011-12-13 Dissolved nitrogen concentration monitoring method, substrate cleaning method, and substrate cleaning apparatus
CN201180061112.2A CN103261885B (zh) 2010-12-20 2011-12-13 溶解氮浓度监测方法及基材清洁方法
US13/995,568 US8778085B2 (en) 2010-12-20 2011-12-13 Dissolved nitrogen concentration monitoring method, substrate cleaning method, and substrate cleaning apparatus
SG2013030630A SG189963A1 (en) 2010-12-20 2011-12-13 Dissolved nitrogen concentration monitoring method, substrate cleaning method, and substrate cleaning apparatus
EP11805808.0A EP2656064B1 (en) 2010-12-20 2011-12-13 Dissolved nitrogen concentration monitoring method and substrate cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010283078A JP5298112B2 (ja) 2010-12-20 2010-12-20 溶存窒素濃度のモニタリング方法

Publications (3)

Publication Number Publication Date
JP2012132708A JP2012132708A (ja) 2012-07-12
JP2012132708A5 JP2012132708A5 (enExample) 2012-08-23
JP5298112B2 true JP5298112B2 (ja) 2013-09-25

Family

ID=45464511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010283078A Active JP5298112B2 (ja) 2010-12-20 2010-12-20 溶存窒素濃度のモニタリング方法

Country Status (8)

Country Link
US (1) US8778085B2 (enExample)
EP (1) EP2656064B1 (enExample)
JP (1) JP5298112B2 (enExample)
KR (1) KR101516905B1 (enExample)
CN (1) CN103261885B (enExample)
MY (1) MY168210A (enExample)
SG (1) SG189963A1 (enExample)
WO (1) WO2012084610A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3858501B1 (en) * 2018-09-26 2024-04-03 Nippon Steel Corporation Metal pipe cleaning method and cleaning device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH679890A5 (enExample) 1989-11-17 1992-04-30 Orbisphere Lab
JP3742451B2 (ja) * 1996-01-17 2006-02-01 昌之 都田 洗浄方法
US6058945A (en) * 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
US5800626A (en) * 1997-02-18 1998-09-01 International Business Machines Corporation Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
JPH10335294A (ja) * 1997-06-05 1998-12-18 Toshiba Corp 基板洗浄装置、洗浄方法およびその方法を用いて製造した半導体装置
JP4232186B2 (ja) * 1998-10-23 2009-03-04 栗田工業株式会社 超純水中の溶存窒素濃度測定装置及び測定方法
JP2003234320A (ja) 2002-02-06 2003-08-22 Nec Electronics Corp 基板の洗浄方法、洗浄薬液、洗浄装置及び半導体装置
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
JP2006310456A (ja) * 2005-04-27 2006-11-09 Dainippon Screen Mfg Co Ltd パーティクル除去方法および基板処理装置
JP2009054919A (ja) * 2007-08-29 2009-03-12 Dainippon Screen Mfg Co Ltd 基板処理装置

Also Published As

Publication number Publication date
EP2656064B1 (en) 2014-10-22
CN103261885A (zh) 2013-08-21
SG189963A1 (en) 2013-06-28
KR101516905B1 (ko) 2015-05-04
US20130263887A1 (en) 2013-10-10
MY168210A (en) 2018-10-15
US8778085B2 (en) 2014-07-15
WO2012084610A1 (en) 2012-06-28
KR20130106423A (ko) 2013-09-27
CN103261885B (zh) 2016-07-13
EP2656064A1 (en) 2013-10-30
JP2012132708A (ja) 2012-07-12

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