JP5398806B2 - 洗浄装置、測定方法および校正方法 - Google Patents
洗浄装置、測定方法および校正方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 63
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- 239000007788 liquid Substances 0.000 claims description 158
- 229910052757 nitrogen Inorganic materials 0.000 claims description 151
- 239000007789 gas Substances 0.000 claims description 85
- 238000004020 luminiscence type Methods 0.000 claims description 43
- 238000005259 measurement Methods 0.000 claims description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 24
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000000691 measurement method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 27
- 229910021642 ultra pure water Inorganic materials 0.000 description 18
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- 238000004519 manufacturing process Methods 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
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- 239000001301 oxygen Substances 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 229920006254 polymer film Polymers 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000011282 treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
- G01N21/274—Calibration, base line adjustment, drift correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/70—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light mechanically excited, e.g. triboluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2418—Probes using optoacoustic interaction with the material, e.g. laser radiation, photoacoustics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
- G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
Description
図1〜図5を参照して、本発明による溶存窒素濃度計の校正方法を説明する。本発明による校正方法は、具体的には、図2に示した超音波洗浄装置1について、この超音波洗浄装置1を構成するモニタリング手段40である溶存窒素濃度計を校正する方法である。
なお、上述のようにC0は6.3ppmであり、CAは5.0ppmであったため、上述した式は次のように表現される。
したがって、このような校正係数を含む式により、溶存窒素濃度計からの測定値を換算して正確な溶存窒素濃度を求めることができる。たとえば、溶存窒素濃度計からの測定値のデータを受信した制御装置において、当該測定値に上記のような校正係数を乗じることにより正確な溶存窒素濃度の計算値を算出し、当該計算値を外部表示装置などへと出力する、といった処理を行なってもよい。
図6および図7を参照して、本発明による溶存窒素濃度の測定方法および本発明による洗浄装置を説明する。
Claims (7)
- 液体に溶存する気体の濃度を測定する測定装置を校正する校正方法であって、
前記液体に溶存する前記気体の濃度を変化させて、前記液体に超音波を照射したときに生じる発光の強度がピークを示す前記気体の濃度を基準濃度として予め決定する工程と、
前記液体中の前記気体の濃度を変化させながら前記液体に超音波を照射することにより、前記発光の強度がピークを示すときに、校正する対象である前記測定装置により前記液体中の前記気体の濃度を測定して、前記気体の濃度の測定値を決定する工程と、
前記測定値と前記基準濃度とに基づいて、前記測定装置を校正する工程と、を備える、校正方法。 - 前記液体は水である、請求項1に記載の校正方法。
- 前記発光の強度は、イメージインテンシファイヤーおよび光電子増倍管のいずれか一方を用いて測定される、請求項1または2に記載の校正方法。
- 前記気体は窒素である、請求項1〜3のいずれか1項に記載の校正方法。
- 前記液体は、半導体基板を洗浄する洗浄液であり、
前記測定装置は前記半導体基板を洗浄する洗浄装置に含まれる、請求項1〜4のいずれか1項に記載の校正方法。 - 液体に溶存する気体の濃度を測定する測定方法であって、
測定対象である前記液体に超音波を照射することにより生じた発光の強度を発光強度測定装置により測定して、前記発光の強度の測定値を得る工程と、
予め求められていた、前記液体に溶存する前記気体の濃度と、前記液体に超音波を照射したときに生じる発光の強度との相関関係に基づき、前記発光の強度の測定値から前記気体の濃度を導出する工程とを備える、測定方法。 - 請求項6に記載の測定方法を用いた基板の洗浄装置であって、
前記基板を洗浄するための洗浄液を保持する洗浄槽と、
前記洗浄液に超音波を照射するための超音波発生部とを備え、
前記超音波発生部は、前記洗浄槽中の前記洗浄液に超音波を伝えることが可能な媒体を介して前記洗浄槽と接続されており、さらに、
前記洗浄液に前記超音波が照射されたときに生じる発光の強度を測定するための発光強度測定装置と、
前記発光強度測定装置により測定された前記発光の強度の測定値と、予め求められていた前記洗浄液に溶存する気体の濃度と前記発光の強度との相関関係とから、前記洗浄液に溶存する前記気体の濃度を導出する演算部とを備える、洗浄装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011242129A JP5398806B2 (ja) | 2011-11-04 | 2011-11-04 | 洗浄装置、測定方法および校正方法 |
EP12180106.2A EP2589951B1 (en) | 2011-11-04 | 2012-08-10 | Calibration method |
US13/618,624 US8575571B2 (en) | 2011-11-04 | 2012-09-14 | Cleaning apparatus, measurement method and calibration method |
MYPI2012004687A MY155665A (en) | 2011-11-04 | 2012-10-22 | Cleaning apparatus, measurement method and calibration method |
SG2012078507A SG189662A1 (en) | 2011-11-04 | 2012-10-22 | Cleaning apparatus, measurement method and calibration method |
TW101139461A TWI480547B (zh) | 2011-11-04 | 2012-10-25 | 清潔設備、測量方法及校正方法 |
KR1020120122903A KR101412829B1 (ko) | 2011-11-04 | 2012-11-01 | 세정 장치, 측정 방법 및 교정 방법 |
CN201210433444.5A CN103094146B (zh) | 2011-11-04 | 2012-11-02 | 清洁设备、测量方法和校正方法 |
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JP2011242129A JP5398806B2 (ja) | 2011-11-04 | 2011-11-04 | 洗浄装置、測定方法および校正方法 |
Publications (2)
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JP2013096937A JP2013096937A (ja) | 2013-05-20 |
JP5398806B2 true JP5398806B2 (ja) | 2014-01-29 |
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US (1) | US8575571B2 (ja) |
EP (1) | EP2589951B1 (ja) |
JP (1) | JP5398806B2 (ja) |
KR (1) | KR101412829B1 (ja) |
CN (1) | CN103094146B (ja) |
MY (1) | MY155665A (ja) |
SG (1) | SG189662A1 (ja) |
TW (1) | TWI480547B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6362280B1 (ja) * | 2017-03-14 | 2018-07-25 | 独立行政法人国立高等専門学校機構 | 気泡数密度計測装置 |
RU2749257C1 (ru) | 2017-10-24 | 2021-06-07 | Джапан Тобакко Инк. | Генерирующее аэрозоль устройство, способ приведения в действие устройства и компьютерно-читаемый носитель данных, содержащий программу для выполнения способа (варианты) |
CN111278312B (zh) | 2017-10-24 | 2023-08-15 | 日本烟草产业株式会社 | 气溶胶生成装置以及使其动作的方法及程序 |
KR102443306B1 (ko) | 2017-10-24 | 2022-09-14 | 니뽄 다바코 산교 가부시키가이샤 | 에어로졸 생성 장치 및 이를 동작시키는 방법 및 프로그램 |
JP6792905B2 (ja) | 2018-01-26 | 2020-12-02 | 日本たばこ産業株式会社 | エアロゾル生成装置及びエアロゾル生成装置の製造方法 |
EP3744195B1 (en) | 2018-01-26 | 2023-08-02 | Japan Tobacco Inc. | Aerosol generation device |
WO2019146061A1 (ja) | 2018-01-26 | 2019-08-01 | 日本たばこ産業株式会社 | エアロゾル生成装置並びにこれを動作させる方法及びプログラム |
US11028686B2 (en) * | 2019-06-12 | 2021-06-08 | Saudi Arabian Oil Company | Sono tool and related systems and methods |
CN113053781A (zh) | 2019-12-27 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 半导体制程的系统和方法 |
US11586230B2 (en) * | 2019-12-27 | 2023-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for automatic concentration control |
CN114046001B (zh) * | 2021-11-16 | 2023-03-28 | 重庆大学 | 一种建筑外墙自清洗雨棚及清洗方法 |
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- 2011-11-04 JP JP2011242129A patent/JP5398806B2/ja active Active
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2012
- 2012-08-10 EP EP12180106.2A patent/EP2589951B1/en active Active
- 2012-09-14 US US13/618,624 patent/US8575571B2/en active Active
- 2012-10-22 SG SG2012078507A patent/SG189662A1/en unknown
- 2012-10-22 MY MYPI2012004687A patent/MY155665A/en unknown
- 2012-10-25 TW TW101139461A patent/TWI480547B/zh active
- 2012-11-01 KR KR1020120122903A patent/KR101412829B1/ko active IP Right Grant
- 2012-11-02 CN CN201210433444.5A patent/CN103094146B/zh active Active
Also Published As
Publication number | Publication date |
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US8575571B2 (en) | 2013-11-05 |
US20130112900A1 (en) | 2013-05-09 |
SG189662A1 (en) | 2013-05-31 |
EP2589951A1 (en) | 2013-05-08 |
MY155665A (en) | 2015-11-13 |
TW201319560A (zh) | 2013-05-16 |
JP2013096937A (ja) | 2013-05-20 |
KR20130049731A (ko) | 2013-05-14 |
CN103094146B (zh) | 2016-04-27 |
KR101412829B1 (ko) | 2014-06-27 |
TWI480547B (zh) | 2015-04-11 |
CN103094146A (zh) | 2013-05-08 |
EP2589951B1 (en) | 2013-10-23 |
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