CN103261885B - 溶解氮浓度监测方法及基材清洁方法 - Google Patents

溶解氮浓度监测方法及基材清洁方法 Download PDF

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Publication number
CN103261885B
CN103261885B CN201180061112.2A CN201180061112A CN103261885B CN 103261885 B CN103261885 B CN 103261885B CN 201180061112 A CN201180061112 A CN 201180061112A CN 103261885 B CN103261885 B CN 103261885B
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CN
China
Prior art keywords
dissolved
nitrogen concentration
oxygen concentration
dissolved oxygen
dissolved nitrogen
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CN201180061112.2A
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English (en)
Chinese (zh)
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CN103261885A (zh
Inventor
榛原照男
久保悦子
森良弘
内部真佐志
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Siltronic AG
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Siltronic AG
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/18—Water
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing
    • Y10T436/176152—Total nitrogen determined
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y10T436/207497—Molecular oxygen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y10T436/207497—Molecular oxygen
    • Y10T436/209163—Dissolved or trace oxygen or oxygen content of a sealed environment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
CN201180061112.2A 2010-12-20 2011-12-13 溶解氮浓度监测方法及基材清洁方法 Active CN103261885B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-283078 2010-12-20
JP2010283078A JP5298112B2 (ja) 2010-12-20 2010-12-20 溶存窒素濃度のモニタリング方法
PCT/EP2011/072639 WO2012084610A1 (en) 2010-12-20 2011-12-13 Dissolved nitrogen concentration monitoring method, substrate cleaning method, and substrate cleaning apparatus

Publications (2)

Publication Number Publication Date
CN103261885A CN103261885A (zh) 2013-08-21
CN103261885B true CN103261885B (zh) 2016-07-13

Family

ID=45464511

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180061112.2A Active CN103261885B (zh) 2010-12-20 2011-12-13 溶解氮浓度监测方法及基材清洁方法

Country Status (8)

Country Link
US (1) US8778085B2 (enExample)
EP (1) EP2656064B1 (enExample)
JP (1) JP5298112B2 (enExample)
KR (1) KR101516905B1 (enExample)
CN (1) CN103261885B (enExample)
MY (1) MY168210A (enExample)
SG (1) SG189963A1 (enExample)
WO (1) WO2012084610A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3858501B1 (en) * 2018-09-26 2024-04-03 Nippon Steel Corporation Metal pipe cleaning method and cleaning device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985811A (en) * 1996-01-17 1999-11-16 Tadhiro Ohmi Cleaning solution and cleaning method
JP2000131308A (ja) * 1998-10-23 2000-05-12 Kurita Water Ind Ltd 超純水中の溶存窒素濃度測定装置及び測定方法
TW409305B (en) * 1997-02-18 2000-10-21 Ibm Control of gas content process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH679890A5 (enExample) 1989-11-17 1992-04-30 Orbisphere Lab
US6058945A (en) * 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
JPH10335294A (ja) * 1997-06-05 1998-12-18 Toshiba Corp 基板洗浄装置、洗浄方法およびその方法を用いて製造した半導体装置
JP2003234320A (ja) 2002-02-06 2003-08-22 Nec Electronics Corp 基板の洗浄方法、洗浄薬液、洗浄装置及び半導体装置
JP2006310456A (ja) * 2005-04-27 2006-11-09 Dainippon Screen Mfg Co Ltd パーティクル除去方法および基板処理装置
JP2009054919A (ja) * 2007-08-29 2009-03-12 Dainippon Screen Mfg Co Ltd 基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985811A (en) * 1996-01-17 1999-11-16 Tadhiro Ohmi Cleaning solution and cleaning method
TW409305B (en) * 1997-02-18 2000-10-21 Ibm Control of gas content process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
JP2000131308A (ja) * 1998-10-23 2000-05-12 Kurita Water Ind Ltd 超純水中の溶存窒素濃度測定装置及び測定方法
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species

Also Published As

Publication number Publication date
EP2656064B1 (en) 2014-10-22
CN103261885A (zh) 2013-08-21
JP5298112B2 (ja) 2013-09-25
SG189963A1 (en) 2013-06-28
KR101516905B1 (ko) 2015-05-04
US20130263887A1 (en) 2013-10-10
MY168210A (en) 2018-10-15
US8778085B2 (en) 2014-07-15
WO2012084610A1 (en) 2012-06-28
KR20130106423A (ko) 2013-09-27
EP2656064A1 (en) 2013-10-30
JP2012132708A (ja) 2012-07-12

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