JP5295751B2 - 酸化亜鉛膜形成方法および酸化亜鉛膜形成装置 - Google Patents
酸化亜鉛膜形成方法および酸化亜鉛膜形成装置 Download PDFInfo
- Publication number
- JP5295751B2 JP5295751B2 JP2008329755A JP2008329755A JP5295751B2 JP 5295751 B2 JP5295751 B2 JP 5295751B2 JP 2008329755 A JP2008329755 A JP 2008329755A JP 2008329755 A JP2008329755 A JP 2008329755A JP 5295751 B2 JP5295751 B2 JP 5295751B2
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- oxide film
- conductive layer
- film forming
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 456
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 228
- 238000000034 method Methods 0.000 title claims description 61
- 239000011347 resin Substances 0.000 claims abstract description 138
- 229920005989 resin Polymers 0.000 claims abstract description 138
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 239000000463 material Substances 0.000 claims abstract description 131
- 239000007788 liquid Substances 0.000 claims abstract description 116
- 238000004070 electrodeposition Methods 0.000 claims abstract description 103
- 238000000151 deposition Methods 0.000 claims abstract description 36
- 230000008021 deposition Effects 0.000 claims abstract description 35
- 239000002904 solvent Substances 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 7
- 239000002244 precipitate Substances 0.000 claims description 55
- 239000010419 fine particle Substances 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000001556 precipitation Methods 0.000 claims description 23
- 230000007246 mechanism Effects 0.000 claims description 22
- 239000003795 chemical substances by application Substances 0.000 claims description 20
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 16
- 239000011701 zinc Substances 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 238000005234 chemical deposition Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 230000002940 repellent Effects 0.000 claims 1
- 239000005871 repellent Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 275
- 238000004140 cleaning Methods 0.000 description 55
- 239000000243 solution Substances 0.000 description 51
- 239000011248 coating agent Substances 0.000 description 22
- 238000000576 coating method Methods 0.000 description 22
- 238000001035 drying Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000007639 printing Methods 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000012528 membrane Substances 0.000 description 9
- 229920006395 saturated elastomer Polymers 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000007921 spray Substances 0.000 description 8
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000004090 dissolution Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000011592 zinc chloride Substances 0.000 description 4
- 235000005074 zinc chloride Nutrition 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001226 reprecipitation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- GTKRFUAGOKINCA-UHFFFAOYSA-M chlorosilver;silver Chemical compound [Ag].[Ag]Cl GTKRFUAGOKINCA-UHFFFAOYSA-M 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- ZLMJMSJWJFRBEC-OUBTZVSYSA-N potassium-40 Chemical compound [40K] ZLMJMSJWJFRBEC-OUBTZVSYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910000349 titanium oxysulfate Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/22—Electroplating: Baths therefor from solutions of zinc
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/204—Light-sensitive devices comprising an oxide semiconductor electrode comprising zinc oxides, e.g. ZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Hybrid Cells (AREA)
Description
2,2a 析出部
4,4a 塗布部
5 補助液付与部
8 マスク形成部
9 樹脂基板
9a 樹脂フィルム
14 ローラ
21 電析槽
22 対極
23 参照電極
24 電源部
34 金属添加部
281 当接ローラ
S11,S13,S14,S22 ステップ
Claims (12)
- 色素増感型太陽電池において光電層として用いられる多孔質の酸化亜鉛膜を基材上に形成する酸化亜鉛膜形成方法であって、
a)基材に形成された導電層上に電解析出または化学析出により酸化亜鉛を含む析出物を形成する工程と、
b)前記析出物が形成された前記導電層上に酸化亜鉛の微粒子および溶媒を含む液状またはペースト状の膜形成材料を塗布し、前記導電層上の膜形成材料から前記溶媒が除去されることにより、前記導電層上に多孔質の酸化亜鉛膜を形成する工程と、
を備えることを特徴とする酸化亜鉛膜形成方法。 - 請求項1に記載の酸化亜鉛膜形成方法であって、
前記b)工程が、膜形成材料の塗布後に、純水である補助液、または、亜鉛イオンを含む補助液を前記導電層上の膜形成材料に付与する工程を備えることを特徴とする酸化亜鉛膜形成方法。 - 請求項1または2に記載の酸化亜鉛膜形成方法であって、
前記a)工程において、前記析出物が多数の島状にて形成されることを特徴とする酸化亜鉛膜形成方法。 - 請求項1または2に記載の酸化亜鉛膜形成方法であって、
前記a)工程において、前記析出物が膜状にて形成されることを特徴とする酸化亜鉛膜形成方法。 - 請求項4に記載の酸化亜鉛膜形成方法であって、
前記a)工程において、亜鉛イオンおよびテンプレート剤を含む電析液中に前記基材を浸漬しつつ電解析出が行われることを特徴とする酸化亜鉛膜形成方法。 - 請求項1ないし5のいずれかに記載の酸化亜鉛膜形成方法であって、
前記b)工程の後に、亜鉛よりも貴な金属のイオンを含む溶液を前記酸化亜鉛膜に付与することにより、前記金属を前記酸化亜鉛膜に添加する工程をさらに備えることを特徴とする酸化亜鉛膜形成方法。 - 請求項1ないし6のいずれかに記載の酸化亜鉛膜形成方法であって、
前記基材が樹脂にて形成されていることを特徴とする酸化亜鉛膜形成方法。 - 請求項1ないし7のいずれかに記載の酸化亜鉛膜形成方法であって、
前記基材において、前記導電層よりも比抵抗が小さい材料にて前記導電層上に配線が形成されているとともに、膜形成材料に対する撥液性を有するマスクが前記配線を覆うように形成されていることを特徴とする酸化亜鉛膜形成方法。 - 色素増感型太陽電池において光電層として用いられる多孔質の酸化亜鉛膜を基材上に形成する酸化亜鉛膜形成装置であって、
基材に形成された導電層上に電解析出または化学析出により酸化亜鉛を含む析出物を形成する析出部と、
前記析出物が形成された前記導電層上に酸化亜鉛の微粒子および溶媒を含む液状またはペースト状の膜形成材料を塗布する塗布部と、
を備え、
前記導電層上の膜形成材料から前記溶媒が除去されることにより、前記導電層上に多孔質の酸化亜鉛膜が形成されることを特徴とする酸化亜鉛膜形成装置。 - 請求項9に記載の酸化亜鉛膜形成装置であって、
前記塗布部による膜形成材料の塗布後に、純水である補助液、または、亜鉛イオンを含む補助液を前記導電層上の膜形成材料に付与する補助液付与部をさらに備えることを特徴とする酸化亜鉛膜形成装置。 - 請求項9または10に記載の酸化亜鉛膜形成装置であって、
亜鉛よりも貴な金属のイオンを含む溶液を前記酸化亜鉛膜に付与することにより、前記金属を前記酸化亜鉛膜に添加する金属添加部をさらに備えることを特徴とする酸化亜鉛膜形成装置。 - 請求項9ないし11のいずれかに記載の酸化亜鉛膜形成装置であって、
前記基材が長尺であり、
前記析出部において、電析槽にて貯溜される電析液中にて前記導電層に対する電解析出が行われ、
前記酸化亜鉛膜形成装置が、
前記導電層よりも比抵抗が小さい材料にて前記導電層上に形成される配線を覆うようにマスクを形成するマスク形成部と、
前記基材の長手方向に連続する複数の部位を前記マスク形成部および前記電析槽に順次移動する移動機構と、
を備え、
前記析出部が、
前記電析液中に浸漬される対極と、
前記電析液中に浸漬される参照電極と、
前記複数の部位の移動方向に関して前記マスク形成部の上流側にて前記配線に当接する当接部と、
前記対極および前記参照電極に電気的に接続されるとともに、前記当接部および前記配線を介して前記導電層に電気的に接続され、前記参照電極と前記導電層との間に所定の電圧を付与して前記電析液中の前記導電層上に前記析出物を形成する電源部と、
を備えることを特徴とする酸化亜鉛膜形成装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008329755A JP5295751B2 (ja) | 2008-12-25 | 2008-12-25 | 酸化亜鉛膜形成方法および酸化亜鉛膜形成装置 |
US12/636,358 US8361831B2 (en) | 2008-12-25 | 2009-12-11 | Zinc oxide film forming method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008329755A JP5295751B2 (ja) | 2008-12-25 | 2008-12-25 | 酸化亜鉛膜形成方法および酸化亜鉛膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010153193A JP2010153193A (ja) | 2010-07-08 |
JP5295751B2 true JP5295751B2 (ja) | 2013-09-18 |
Family
ID=42285438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008329755A Expired - Fee Related JP5295751B2 (ja) | 2008-12-25 | 2008-12-25 | 酸化亜鉛膜形成方法および酸化亜鉛膜形成装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8361831B2 (ja) |
JP (1) | JP5295751B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011151430A2 (de) * | 2010-06-02 | 2011-12-08 | Kuka Systems Gmbh | Fertigungseinrichtung und verfahren |
US8628997B2 (en) * | 2010-10-01 | 2014-01-14 | Stion Corporation | Method and device for cadmium-free solar cells |
US8906732B2 (en) * | 2010-10-01 | 2014-12-09 | Stion Corporation | Method and device for cadmium-free solar cells |
JP2012109558A (ja) * | 2010-10-29 | 2012-06-07 | Kyocera Corp | 光電変換素子および光電変換装置ならびに光電変換素子の製造方法 |
KR101549210B1 (ko) * | 2010-11-30 | 2015-09-03 | 한국전자통신연구원 | ZnO 템플릿을 이용한 TiO2 어레이 형성 방법 |
EP3158107A1 (en) * | 2014-06-17 | 2017-04-26 | Nuvosun, Inc. | Chemical bath deposition system and method |
JP2022524193A (ja) * | 2019-03-08 | 2022-04-28 | フイ・フアン・ホエ | 電気化学はポリマーを生産します |
KR20230020035A (ko) * | 2021-08-02 | 2023-02-10 | 삼성디스플레이 주식회사 | 증착용 마스크 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0566212A (ja) | 1991-09-09 | 1993-03-19 | Hitachi Ltd | 分極測定装置の電解槽 |
JP3148882B2 (ja) * | 1995-03-27 | 2001-03-26 | 大阪市 | 酸化亜鉛膜の製造方法 |
JPH10140373A (ja) * | 1997-02-04 | 1998-05-26 | Canon Inc | 酸化亜鉛薄膜の製造方法、それを用いた半導体素子基板及び光起電力素子 |
JPH1176714A (ja) | 1997-09-04 | 1999-03-23 | Chiyoda Manufacturing Co Ltd | 洗浄装置に付設される濾過器 |
JP4081625B2 (ja) | 1998-06-18 | 2008-04-30 | 松下電器産業株式会社 | 透明酸化亜鉛皮膜の作製方法 |
JP2001054756A (ja) | 1999-08-18 | 2001-02-27 | Idemitsu Kosan Co Ltd | ペースト塗布装置、引出電極の形成方法および液晶素子 |
JP2002080998A (ja) * | 2000-07-03 | 2002-03-22 | Canon Inc | 酸化亜鉛膜の製造装置、および酸化亜鉛膜の製造方法 |
JP2002055226A (ja) * | 2000-08-07 | 2002-02-20 | Nippon Sheet Glass Co Ltd | 偏光素子及びその製造方法 |
JP2002153793A (ja) | 2000-11-16 | 2002-05-28 | Hitachi Industries Co Ltd | ペースト塗布機 |
JP2002356400A (ja) * | 2001-03-22 | 2002-12-13 | Canon Inc | 酸化亜鉛の針状構造体の製造方法及びそれを用いた電池、光電変換装置 |
JP3883120B2 (ja) * | 2002-03-29 | 2007-02-21 | 財団法人名古屋産業科学研究所 | 色素増感太陽電池基体用の多孔質酸化亜鉛薄膜及び色素増感太陽電池の光電極材料用の酸化亜鉛/色素複合薄膜並びにこれらの製造方法、酸化亜鉛/色素複合薄膜を光電極材料に用いる色素増感太陽電池 |
WO2005078853A1 (ja) * | 2004-02-13 | 2005-08-25 | Bridgestone Corporation | 色素増感型太陽電池 |
JP2005259514A (ja) | 2004-03-11 | 2005-09-22 | Bridgestone Corp | 色素増感型太陽電池 |
US7981286B2 (en) | 2004-09-15 | 2011-07-19 | Dainippon Screen Mfg Co., Ltd. | Substrate processing apparatus and method of removing particles |
JP4381944B2 (ja) | 2004-09-29 | 2009-12-09 | 大日本スクリーン製造株式会社 | パーティクル除去方法および基板処理装置 |
JP4942013B2 (ja) | 2005-07-20 | 2012-05-30 | 住友大阪セメント株式会社 | スクリーン印刷用の酸化チタンペースト、そのペーストを用いた酸化チタン多孔質薄膜電極及び光電変換素子並びに酸化チタンペーストの製造方法 |
JP2007165653A (ja) | 2005-12-14 | 2007-06-28 | Ses Co Ltd | 気泡除去方法及び気泡除去装置 |
JP4620599B2 (ja) | 2006-02-06 | 2011-01-26 | アクトファイブ株式会社 | 異物除去処理装置 |
JP4817378B2 (ja) | 2006-09-07 | 2011-11-16 | 国立大学法人岐阜大学 | 酸化亜鉛多孔質電極の製造方法 |
JP4872861B2 (ja) * | 2007-09-14 | 2012-02-08 | 旭硝子株式会社 | プラズモン共鳴型光電変換素子および該製造方法 |
JP2011159729A (ja) * | 2010-01-29 | 2011-08-18 | Fujifilm Corp | 導電性酸化亜鉛積層膜の製造方法、光電変換素子の製造方法 |
-
2008
- 2008-12-25 JP JP2008329755A patent/JP5295751B2/ja not_active Expired - Fee Related
-
2009
- 2009-12-11 US US12/636,358 patent/US8361831B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8361831B2 (en) | 2013-01-29 |
JP2010153193A (ja) | 2010-07-08 |
US20100167460A1 (en) | 2010-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5295751B2 (ja) | 酸化亜鉛膜形成方法および酸化亜鉛膜形成装置 | |
JP5868751B2 (ja) | 銀ナノワイヤ分散液の製造方法 | |
JP5995906B2 (ja) | 隔膜の製造方法、及び金属被膜の製造方法 | |
US20100200408A1 (en) | Method and apparatus for the solution deposition of high quality oxide material | |
CN108417722A (zh) | 一种基于离子液添加剂的钙钛矿太阳电池的制备方法 | |
KR20020032335A (ko) | 도금 촉매 | |
JP2007533125A (ja) | 透明で伝導性の酸化物層を持つ基板を洗浄およびエッチングする方法並びに該方法を実施する装置 | |
US20220199843A1 (en) | Method of manufacturing a photovoltaic cell | |
JPH07500948A (ja) | オーミックコンタクト及びオーミックコンタクトを有する光電池の製造方法 | |
CN112768140A (zh) | 一种氧化铝防护银纳米线透明电极及其制备方法与应用 | |
US20100200060A1 (en) | Solution based non-vacuum method and apparatus for preparing oxide materials | |
US20100200067A1 (en) | Substrate for semiconductor device and method for its manufacture | |
JP2008150694A (ja) | メッキシステム、メッキ方法、並びに、色素増感型太陽電池の製造システムおよび製造方法 | |
JP2017160524A (ja) | 光化学電極、及びその製造方法 | |
US20100200413A1 (en) | Solution deposition method and apparatus with partiphobic substrate orientation | |
US20100200411A1 (en) | Method and apparatus for the solution deposition of oxide | |
JP3465872B2 (ja) | 太陽電池用テルル化カドミウム膜の処理方法と処理装置 | |
CN113943955B (zh) | 一种铜电镀设备及方法 | |
CN111270283A (zh) | 一种无上电极水平电镀方法 | |
JP2008184651A (ja) | メッキシステムおよびメッキ方法 | |
JP2008266689A (ja) | 基材に金属薄膜を形成する方法及び金属薄膜形成装置 | |
JP2016165674A (ja) | 塗布装置および塗布方法ならびに光電変換装置の製造方法 | |
JP2005194585A (ja) | 基板の湿式処理方法及び基板処理装置 | |
CN116208118B (zh) | 柔性声表面波器件及其制备方法 | |
JP2005171271A (ja) | 堆積膜の形成方法、それを用いた光起電力素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110606 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130603 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130612 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |