CN1170964C - 形成氧化锌薄膜的设备和方法 - Google Patents
形成氧化锌薄膜的设备和方法 Download PDFInfo
- Publication number
- CN1170964C CN1170964C CNB991059395A CN99105939A CN1170964C CN 1170964 C CN1170964 C CN 1170964C CN B991059395 A CNB991059395 A CN B991059395A CN 99105939 A CN99105939 A CN 99105939A CN 1170964 C CN1170964 C CN 1170964C
- Authority
- CN
- China
- Prior art keywords
- counter electrode
- oxide film
- zinc
- conductive substrates
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 168
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title 1
- 239000007864 aqueous solution Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims description 75
- 229960001296 zinc oxide Drugs 0.000 claims description 75
- 239000000243 solution Substances 0.000 claims description 42
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 61
- 230000000052 comparative effect Effects 0.000 description 22
- 230000005856 abnormality Effects 0.000 description 20
- 238000000151 deposition Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 18
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000010935 stainless steel Substances 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 241001249696 Senna alexandrina Species 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 229930006000 Sucrose Natural products 0.000 description 4
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000005720 sucrose Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000635 Spelter Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 241000276425 Xiphophorus maculatus Species 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- -1 dextrin Chemical compound 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 150000002016 disaccharides Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011833 salt mixture Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
实施例3 | 比较例2 | |||||
反射率 | 反常生长量 | 膜厚度 | 反射率 | 反常生长量 | 膜厚度 | |
5m | 1.0倍 | 1.0倍 | 1.0倍 | 1.0倍 | 1.0倍 | 1.0倍 |
20m | 1.0倍 | 1.0倍 | 0.9倍 | 0.9倍 | 1.2倍 | 0.9倍 |
50m | 0.9倍 | 1.1倍 | 0.9倍 | 0.8倍 | 1.3倍 | 0.7倍 |
100m | 1.0倍 | 1.1倍 | 1.0倍 | 0.6倍 | 1.5倍 | 0.7倍 |
时间(分钟) | 实施例5-1 | 实施例5-2 | ||
膜厚度 | 反常生长量 | 膜厚度 | 反常生长量 | |
0-15 | 1.0倍 | 1.0倍 | 1.0倍 | 1.0倍 |
15-30 | 1.1倍 | 1.1倍 | 0.9倍 | 1.2倍 |
30-45 | 0.9倍 | 1.1倍 | 0.8倍 | 1.3倍 |
45-60 | 1.0倍 | 1.0倍 | 0.6倍 | 1.3倍 |
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP013821/98 | 1998-01-27 | ||
JP1382198 | 1998-01-27 | ||
JP013821/1998 | 1998-01-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004100039563A Division CN1519396A (zh) | 1998-01-27 | 1999-01-27 | 形成氧化锌薄膜的设备和方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1236025A CN1236025A (zh) | 1999-11-24 |
CN1170964C true CN1170964C (zh) | 2004-10-13 |
Family
ID=11843952
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004100039563A Pending CN1519396A (zh) | 1998-01-27 | 1999-01-27 | 形成氧化锌薄膜的设备和方法 |
CNB991059395A Expired - Fee Related CN1170964C (zh) | 1998-01-27 | 1999-01-27 | 形成氧化锌薄膜的设备和方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004100039563A Pending CN1519396A (zh) | 1998-01-27 | 1999-01-27 | 形成氧化锌薄膜的设备和方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6224736B1 (zh) |
EP (1) | EP0933449A1 (zh) |
KR (2) | KR100386791B1 (zh) |
CN (2) | CN1519396A (zh) |
AU (1) | AU747371B2 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4684477B2 (ja) | 2000-07-04 | 2011-05-18 | キヤノン株式会社 | 酸化亜鉛膜の電析方法 |
US6728392B1 (en) * | 2001-01-30 | 2004-04-27 | Navigation Technologies Corp. | Shape comparison using a rotational variation metric and applications thereof |
TW200945612A (en) * | 2007-12-28 | 2009-11-01 | Ulvac Inc | Solar battery and method for manufacturing the same |
EP2138608A1 (en) | 2008-06-24 | 2009-12-30 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Process for preparing a transparent and conductive film on a substrate |
US20100200413A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Solution deposition method and apparatus with partiphobic substrate orientation |
US20100200067A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Substrate for semiconductor device and method for its manufacture |
US20100200409A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Solution deposition and method with substrate making |
US20100200060A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Solution based non-vacuum method and apparatus for preparing oxide materials |
US20100200411A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Method and apparatus for the solution deposition of oxide |
US20100200408A1 (en) * | 2009-02-11 | 2010-08-12 | United Solar Ovonic Llc | Method and apparatus for the solution deposition of high quality oxide material |
TWI379430B (en) * | 2009-04-16 | 2012-12-11 | Atomic Energy Council | A method of fabricating a thin interface for internal light reflection and impurities isolation |
US9997334B1 (en) | 2017-02-09 | 2018-06-12 | Lyten, Inc. | Seedless particles with carbon allotropes |
US9767992B1 (en) | 2017-02-09 | 2017-09-19 | Lyten, Inc. | Microwave chemical processing reactor |
US10920035B2 (en) | 2017-03-16 | 2021-02-16 | Lyten, Inc. | Tuning deformation hysteresis in tires using graphene |
WO2018169889A1 (en) | 2017-03-16 | 2018-09-20 | Lyten, Inc. | Carbon and elastomer integration |
WO2019126196A1 (en) | 2017-12-22 | 2019-06-27 | Lyten, Inc. | Structured composite materials |
SG11202006088XA (en) | 2018-01-04 | 2020-07-29 | Lyten Inc | Resonant gas sensor |
WO2019143559A1 (en) | 2018-01-16 | 2019-07-25 | Lyten, Inc. | Microwave transparent pressure barrier |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4586988A (en) | 1983-08-19 | 1986-05-06 | Energy Conversion Devices, Inc. | Method of forming an electrically conductive member |
JPS62188799A (ja) * | 1986-02-14 | 1987-08-18 | Nippon Kokan Kk <Nkk> | 電気鍍金用電極 |
JPH04107296A (ja) * | 1990-08-27 | 1992-04-08 | Nippon Steel Corp | 鋼帯の連続電気メッキ装置 |
JP3273294B2 (ja) | 1995-02-13 | 2002-04-08 | 大阪市 | 酸化亜鉛膜作製用電解液 |
US5800632A (en) | 1995-09-28 | 1998-09-01 | Canon Kabushiki Kaisha | Photovoltaic device and method for manufacturing it |
US5804466A (en) | 1996-03-06 | 1998-09-08 | Canon Kabushiki Kaisha | Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film |
-
1999
- 1999-01-22 US US09/235,391 patent/US6224736B1/en not_active Expired - Lifetime
- 1999-01-26 EP EP99101396A patent/EP0933449A1/en not_active Withdrawn
- 1999-01-27 KR KR10-1999-0002639A patent/KR100386791B1/ko not_active IP Right Cessation
- 1999-01-27 AU AU13240/99A patent/AU747371B2/en not_active Ceased
- 1999-01-27 CN CNA2004100039563A patent/CN1519396A/zh active Pending
- 1999-01-27 CN CNB991059395A patent/CN1170964C/zh not_active Expired - Fee Related
-
2003
- 2003-01-24 KR KR10-2003-0004767A patent/KR100419597B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0933449A1 (en) | 1999-08-04 |
KR20030014313A (ko) | 2003-02-15 |
KR100419597B1 (ko) | 2004-02-19 |
AU747371B2 (en) | 2002-05-16 |
CN1236025A (zh) | 1999-11-24 |
US6224736B1 (en) | 2001-05-01 |
CN1519396A (zh) | 2004-08-11 |
KR19990068170A (ko) | 1999-08-25 |
AU1324099A (en) | 1999-08-19 |
KR100386791B1 (ko) | 2003-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1170964C (zh) | 形成氧化锌薄膜的设备和方法 | |
CN1150353C (zh) | 形成氧化锌薄膜的方法和使用此薄膜制备半导体元件基体和光电元件的方法 | |
JP3667178B2 (ja) | 酸化亜鉛薄膜の製造方法、それを用いた光起電力素子の製造方法、及び光起電力素子 | |
CN1140932C (zh) | 氧化锌薄膜、含有其的光电器件及它们的制备方法 | |
US6576112B2 (en) | Method of forming zinc oxide film and process for producing photovoltaic device using it | |
KR100294098B1 (ko) | 산화아연박막의제조방법,및이박막을사용한반도체소자기판의제조방법및광전변환소자의제조방법 | |
US6123824A (en) | Process for producing photo-electricity generating device | |
CN1299366C (zh) | 叠层型光生伏打元件 | |
US20110048956A1 (en) | Electrodeposition method for the production of nanostructured zno | |
CN1223010C (zh) | 太阳能电池的基片、具有此基片的太阳能电池以及太阳能电池的生产工艺 | |
US6068755A (en) | Process for forming zinc oxide film and processes for producing semiconductor device plate and photo-electricity generating device using the film | |
CN1468982A (zh) | 镀金装置及镀金方法 | |
US6077411A (en) | Apparatus and process for forming zinc oxide film and process for producing photo-electricity generating device using the film | |
JP2006269607A (ja) | 光起電力素子の製造方法 | |
JP3544095B2 (ja) | 酸化亜鉛薄膜の製造方法、それを用いた半導体素子基板及び光起電力素子 | |
US20050150773A1 (en) | Method for forming deposition film and method for producing photovoltaic device | |
Zainal et al. | Effect of annealing temperature on construction of CuO layer on electrodeposited-Cu2O layer by annealing | |
JP3437475B2 (ja) | 酸化亜鉛膜の形成方法及び該酸化亜鉛膜を用いた光起電力素子 | |
CN110943171A (zh) | 一种量子点发光二极管及其制备方法 | |
JP3368176B2 (ja) | 酸化亜鉛薄膜の製造方法、それを用いた光起電力素子及び半導体素子基板の製造方法 | |
US20030085129A1 (en) | Method of forming zinc oxide film, method of producing semiconductor element substrate using same, and method of producing photovoltaic element | |
JP3413072B2 (ja) | 酸化亜鉛薄膜の製造方法 | |
JP3524366B2 (ja) | 酸化亜鉛薄膜形成装置、酸化亜鉛薄膜の形成方法、並びにそれを用いた半導体素子基板及び光起電力素子の製造方法 | |
JP2004331991A (ja) | 酸化亜鉛膜の電析方法、電析装置及び光起電力素子 | |
CN1542987A (zh) | 叠层型光电元件以及电流平衡调整方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
CI01 | Publication of corrected invention patent application |
Correction item: Inventor Correct: Miyagi Yusuke False: Yusuke Miyamoto Number: 47 Page: 49 Volume: 15 |
|
CI02 | Correction of invention patent application |
Correction item: Inventor Correct: Miyagi Yusuke False: Yusuke Miyamoto Number: 47 Page: The title page Volume: 15 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041013 Termination date: 20150127 |
|
EXPY | Termination of patent right or utility model |