JP5290574B2 - ショットキーデバイス - Google Patents

ショットキーデバイス Download PDF

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Publication number
JP5290574B2
JP5290574B2 JP2007515097A JP2007515097A JP5290574B2 JP 5290574 B2 JP5290574 B2 JP 5290574B2 JP 2007515097 A JP2007515097 A JP 2007515097A JP 2007515097 A JP2007515097 A JP 2007515097A JP 5290574 B2 JP5290574 B2 JP 5290574B2
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JP
Japan
Prior art keywords
schottky
region
transistor
terminal
well region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007515097A
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English (en)
Japanese (ja)
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JP2008501238A (ja
JP2008501238A5 (https=
Inventor
パラササラシー、ビジェイ
ケイ． ケムカ、ビシュヌ
チュー、ロングア
ボース、アミタバ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
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NXP USA Inc
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Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2008501238A publication Critical patent/JP2008501238A/ja
Publication of JP2008501238A5 publication Critical patent/JP2008501238A5/ja
Application granted granted Critical
Publication of JP5290574B2 publication Critical patent/JP5290574B2/ja
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
JP2007515097A 2004-05-28 2005-04-26 ショットキーデバイス Expired - Fee Related JP5290574B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/856,602 2004-05-28
US10/856,602 US7071518B2 (en) 2004-05-28 2004-05-28 Schottky device
PCT/US2005/014323 WO2005119913A2 (en) 2004-05-28 2005-04-26 Schottky device

Publications (3)

Publication Number Publication Date
JP2008501238A JP2008501238A (ja) 2008-01-17
JP2008501238A5 JP2008501238A5 (https=) 2008-06-19
JP5290574B2 true JP5290574B2 (ja) 2013-09-18

Family

ID=35459654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515097A Expired - Fee Related JP5290574B2 (ja) 2004-05-28 2005-04-26 ショットキーデバイス

Country Status (6)

Country Link
US (1) US7071518B2 (https=)
EP (1) EP1749343A4 (https=)
JP (1) JP5290574B2 (https=)
CN (1) CN100539181C (https=)
TW (1) TWI372470B (https=)
WO (1) WO2005119913A2 (https=)

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US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
JP4845410B2 (ja) * 2005-03-31 2011-12-28 株式会社リコー 半導体装置
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2631951B1 (en) 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
JP5358882B2 (ja) * 2007-02-09 2013-12-04 サンケン電気株式会社 整流素子を含む複合半導体装置
US7777257B2 (en) * 2007-02-14 2010-08-17 Freescale Semiconductor, Inc. Bipolar Schottky diode and method
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP5109506B2 (ja) * 2007-07-03 2012-12-26 株式会社デンソー 半導体装置
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
US7745845B2 (en) * 2008-04-23 2010-06-29 Fairchild Semiconductor Corporation Integrated low leakage schottky diode
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits
US7808069B2 (en) * 2008-12-31 2010-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Robust structure for HVPW Schottky diode
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8681518B2 (en) 2009-07-21 2014-03-25 Cree, Inc. High speed rectifier circuit
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
CN102088020B (zh) * 2009-12-08 2012-10-03 上海华虹Nec电子有限公司 功率mos晶体管内集成肖特基二极管的器件及制造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8415748B2 (en) 2010-04-23 2013-04-09 International Business Machines Corporation Use of epitaxial Ni silicide
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
JP2014027253A (ja) * 2012-06-22 2014-02-06 Toshiba Corp 整流回路
CN105789333A (zh) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US10573637B2 (en) * 2016-11-21 2020-02-25 Nexperia B.V. Carrier bypass for electrostatic discharge
WO2018191217A1 (en) * 2017-04-10 2018-10-18 Schottky Lsi, Inc. Schottky-cmos asynchronous logic cells
CN109088533A (zh) * 2018-09-17 2018-12-25 苏州芯智瑞微电子有限公司 一种具有可拓展反向击穿电压新型二极管拓扑结构
US12495576B2 (en) * 2022-05-03 2025-12-09 Fast SiC Semiconductor Incorporated Silicon carbide semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
US4253162A (en) * 1979-08-28 1981-02-24 Rca Corporation Blocked source node field-effect circuitry
US5614755A (en) 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
US5818084A (en) * 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
JP3348711B2 (ja) * 1999-12-03 2002-11-20 セイコーエプソン株式会社 半導体装置およびその製造方法
JP2001230425A (ja) * 2000-02-17 2001-08-24 Seiko Epson Corp Ｍｏｓダイオード回路
KR20030001823A (ko) * 2001-06-28 2003-01-08 주식회사 하이닉스반도체 반도체 소자

Also Published As

Publication number Publication date
TWI372470B (en) 2012-09-11
WO2005119913A2 (en) 2005-12-15
JP2008501238A (ja) 2008-01-17
CN101142684A (zh) 2008-03-12
EP1749343A2 (en) 2007-02-07
CN100539181C (zh) 2009-09-09
TW200610193A (en) 2006-03-16
EP1749343A4 (en) 2007-11-14
US7071518B2 (en) 2006-07-04
WO2005119913A3 (en) 2007-05-24
US20050275055A1 (en) 2005-12-15

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