JP2008501238A5 - - Google Patents

Download PDF

Info

Publication number
JP2008501238A5
JP2008501238A5 JP2007515097A JP2007515097A JP2008501238A5 JP 2008501238 A5 JP2008501238 A5 JP 2008501238A5 JP 2007515097 A JP2007515097 A JP 2007515097A JP 2007515097 A JP2007515097 A JP 2007515097A JP 2008501238 A5 JP2008501238 A5 JP 2008501238A5
Authority
JP
Japan
Prior art keywords
schottky
region
positive terminal
negative terminal
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007515097A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008501238A (ja
JP5290574B2 (ja
Filing date
Publication date
Priority claimed from US10/856,602 external-priority patent/US7071518B2/en
Application filed filed Critical
Publication of JP2008501238A publication Critical patent/JP2008501238A/ja
Publication of JP2008501238A5 publication Critical patent/JP2008501238A5/ja
Application granted granted Critical
Publication of JP5290574B2 publication Critical patent/JP5290574B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007515097A 2004-05-28 2005-04-26 ショットキーデバイス Expired - Fee Related JP5290574B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/856,602 2004-05-28
US10/856,602 US7071518B2 (en) 2004-05-28 2004-05-28 Schottky device
PCT/US2005/014323 WO2005119913A2 (en) 2004-05-28 2005-04-26 Schottky device

Publications (3)

Publication Number Publication Date
JP2008501238A JP2008501238A (ja) 2008-01-17
JP2008501238A5 true JP2008501238A5 (https=) 2008-06-19
JP5290574B2 JP5290574B2 (ja) 2013-09-18

Family

ID=35459654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515097A Expired - Fee Related JP5290574B2 (ja) 2004-05-28 2005-04-26 ショットキーデバイス

Country Status (6)

Country Link
US (1) US7071518B2 (https=)
EP (1) EP1749343A4 (https=)
JP (1) JP5290574B2 (https=)
CN (1) CN100539181C (https=)
TW (1) TWI372470B (https=)
WO (1) WO2005119913A2 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
JP4845410B2 (ja) * 2005-03-31 2011-12-28 株式会社リコー 半導体装置
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2631951B1 (en) 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
JP5358882B2 (ja) * 2007-02-09 2013-12-04 サンケン電気株式会社 整流素子を含む複合半導体装置
US7777257B2 (en) * 2007-02-14 2010-08-17 Freescale Semiconductor, Inc. Bipolar Schottky diode and method
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP5109506B2 (ja) * 2007-07-03 2012-12-26 株式会社デンソー 半導体装置
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
US7745845B2 (en) * 2008-04-23 2010-06-29 Fairchild Semiconductor Corporation Integrated low leakage schottky diode
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits
US7808069B2 (en) * 2008-12-31 2010-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Robust structure for HVPW Schottky diode
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8681518B2 (en) 2009-07-21 2014-03-25 Cree, Inc. High speed rectifier circuit
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
CN102088020B (zh) * 2009-12-08 2012-10-03 上海华虹Nec电子有限公司 功率mos晶体管内集成肖特基二极管的器件及制造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8415748B2 (en) 2010-04-23 2013-04-09 International Business Machines Corporation Use of epitaxial Ni silicide
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
JP2014027253A (ja) * 2012-06-22 2014-02-06 Toshiba Corp 整流回路
CN105789333A (zh) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US10573637B2 (en) * 2016-11-21 2020-02-25 Nexperia B.V. Carrier bypass for electrostatic discharge
WO2018191217A1 (en) * 2017-04-10 2018-10-18 Schottky Lsi, Inc. Schottky-cmos asynchronous logic cells
CN109088533A (zh) * 2018-09-17 2018-12-25 苏州芯智瑞微电子有限公司 一种具有可拓展反向击穿电压新型二极管拓扑结构
US12495576B2 (en) * 2022-05-03 2025-12-09 Fast SiC Semiconductor Incorporated Silicon carbide semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
US4253162A (en) * 1979-08-28 1981-02-24 Rca Corporation Blocked source node field-effect circuitry
US5614755A (en) 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
US5818084A (en) * 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
JP3348711B2 (ja) * 1999-12-03 2002-11-20 セイコーエプソン株式会社 半導体装置およびその製造方法
JP2001230425A (ja) * 2000-02-17 2001-08-24 Seiko Epson Corp Ｍｏｓダイオード回路
KR20030001823A (ko) * 2001-06-28 2003-01-08 주식회사 하이닉스반도체 반도체 소자

Similar Documents

Publication Publication Date Title
JP2008501238A5 (https=)
CN100539181C (zh) 肖特基器件
CN204680675U (zh) 半导体器件的结构
JP2020167423A5 (https=)
CN103460390B (zh) 碳化硅纵型场效应晶体管
EP3514826A3 (en) Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication
JPWO2021094878A5 (https=)
JP2010183022A5 (ja) 半導体装置
US9530880B2 (en) DMOS transistor with trench schottky diode
JP2019161103A5 (https=)
CN103268889B (zh) 一种无结型横向隧穿场效应晶体管
JP2008505483A5 (https=)
JP2002319675A5 (https=)
WO2005070009A3 (en) Enhancement mode iii-nitride fet
WO2008041249A8 (en) Single voltage supply pseudomorphic high electron mobility transistor (phemt) power device and process for manufacturing the same
CN112331720B (zh) 一种具有高阈值稳定性型氮化镓功率半导体器件
JP2010141308A5 (ja) 半導体装置
JP2008235873A5 (https=)
EP1544920A3 (en) Semiconductor device having a heterojunction or a Schottky junction
EP2293336A4 (en) SEMICONDUCTOR COMPONENT
TWI455311B (zh) 橫向擴散金屬氧化物半導體元件
TW200742106A (en) Photoelectric conversion device, manufacturing method thereof and semiconductor device
JP2003007843A5 (https=)
WO2005081768A3 (en) Schottky-barrier tunneling transistor
CN113178485A (zh) 一种P型槽栅结合极化层结构的GaN HEMT器件