CN100539181C - 肖特基器件 - Google Patents

肖特基器件 Download PDF

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Publication number
CN100539181C
CN100539181C CNB2005800173372A CN200580017337A CN100539181C CN 100539181 C CN100539181 C CN 100539181C CN B2005800173372 A CNB2005800173372 A CN B2005800173372A CN 200580017337 A CN200580017337 A CN 200580017337A CN 100539181 C CN100539181 C CN 100539181C
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CN
China
Prior art keywords
schottky
region
terminal
doped
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800173372A
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English (en)
Chinese (zh)
Other versions
CN101142684A (zh
Inventor
维杰伊·帕萨撒拉希
维施努·K.·基姆卡
朱荣华
阿米塔瓦·博斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN101142684A publication Critical patent/CN101142684A/zh
Application granted granted Critical
Publication of CN100539181C publication Critical patent/CN100539181C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
CNB2005800173372A 2004-05-28 2005-04-26 肖特基器件 Expired - Fee Related CN100539181C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/856,602 2004-05-28
US10/856,602 US7071518B2 (en) 2004-05-28 2004-05-28 Schottky device

Publications (2)

Publication Number Publication Date
CN101142684A CN101142684A (zh) 2008-03-12
CN100539181C true CN100539181C (zh) 2009-09-09

Family

ID=35459654

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800173372A Expired - Fee Related CN100539181C (zh) 2004-05-28 2005-04-26 肖特基器件

Country Status (6)

Country Link
US (1) US7071518B2 (https=)
EP (1) EP1749343A4 (https=)
JP (1) JP5290574B2 (https=)
CN (1) CN100539181C (https=)
TW (1) TWI372470B (https=)
WO (1) WO2005119913A2 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
JP4845410B2 (ja) * 2005-03-31 2011-12-28 株式会社リコー 半導体装置
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2631951B1 (en) 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
JP5358882B2 (ja) * 2007-02-09 2013-12-04 サンケン電気株式会社 整流素子を含む複合半導体装置
US7777257B2 (en) * 2007-02-14 2010-08-17 Freescale Semiconductor, Inc. Bipolar Schottky diode and method
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP5109506B2 (ja) * 2007-07-03 2012-12-26 株式会社デンソー 半導体装置
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
US7745845B2 (en) * 2008-04-23 2010-06-29 Fairchild Semiconductor Corporation Integrated low leakage schottky diode
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits
US7808069B2 (en) * 2008-12-31 2010-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Robust structure for HVPW Schottky diode
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8681518B2 (en) 2009-07-21 2014-03-25 Cree, Inc. High speed rectifier circuit
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
CN102088020B (zh) * 2009-12-08 2012-10-03 上海华虹Nec电子有限公司 功率mos晶体管内集成肖特基二极管的器件及制造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8415748B2 (en) 2010-04-23 2013-04-09 International Business Machines Corporation Use of epitaxial Ni silicide
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
JP2014027253A (ja) * 2012-06-22 2014-02-06 Toshiba Corp 整流回路
CN105789333A (zh) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US10573637B2 (en) * 2016-11-21 2020-02-25 Nexperia B.V. Carrier bypass for electrostatic discharge
WO2018191217A1 (en) * 2017-04-10 2018-10-18 Schottky Lsi, Inc. Schottky-cmos asynchronous logic cells
CN109088533A (zh) * 2018-09-17 2018-12-25 苏州芯智瑞微电子有限公司 一种具有可拓展反向击穿电压新型二极管拓扑结构
US12495576B2 (en) * 2022-05-03 2025-12-09 Fast SiC Semiconductor Incorporated Silicon carbide semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1233456A2 (en) * 1993-04-30 2002-08-21 Texas Instruments Incorporated High voltage/high beta semiconductor devices and methods of fabrication thereof
US6459139B2 (en) * 1999-12-03 2002-10-01 Seiko Epson Corporation Semiconductor device and method of fabricating the same
US6476442B1 (en) * 1996-05-15 2002-11-05 Siliconix Incorporated Pseudo-Schottky diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
US4253162A (en) * 1979-08-28 1981-02-24 Rca Corporation Blocked source node field-effect circuitry
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
JP2001230425A (ja) * 2000-02-17 2001-08-24 Seiko Epson Corp Ｍｏｓダイオード回路
KR20030001823A (ko) * 2001-06-28 2003-01-08 주식회사 하이닉스반도체 반도체 소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1233456A2 (en) * 1993-04-30 2002-08-21 Texas Instruments Incorporated High voltage/high beta semiconductor devices and methods of fabrication thereof
US6476442B1 (en) * 1996-05-15 2002-11-05 Siliconix Incorporated Pseudo-Schottky diode
US6459139B2 (en) * 1999-12-03 2002-10-01 Seiko Epson Corporation Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
TWI372470B (en) 2012-09-11
WO2005119913A2 (en) 2005-12-15
JP2008501238A (ja) 2008-01-17
CN101142684A (zh) 2008-03-12
EP1749343A2 (en) 2007-02-07
JP5290574B2 (ja) 2013-09-18
TW200610193A (en) 2006-03-16
EP1749343A4 (en) 2007-11-14
US7071518B2 (en) 2006-07-04
WO2005119913A3 (en) 2007-05-24
US20050275055A1 (en) 2005-12-15

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Granted publication date: 20090909

Termination date: 20160426