TWI372470B - Schottky device - Google Patents
Schottky deviceInfo
- Publication number
- TWI372470B TWI372470B TW094116366A TW94116366A TWI372470B TW I372470 B TWI372470 B TW I372470B TW 094116366 A TW094116366 A TW 094116366A TW 94116366 A TW94116366 A TW 94116366A TW I372470 B TWI372470 B TW I372470B
- Authority
- TW
- Taiwan
- Prior art keywords
- schottky device
- schottky
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/856,602 US7071518B2 (en) | 2004-05-28 | 2004-05-28 | Schottky device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200610193A TW200610193A (en) | 2006-03-16 |
| TWI372470B true TWI372470B (en) | 2012-09-11 |
Family
ID=35459654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094116366A TWI372470B (en) | 2004-05-28 | 2005-05-19 | Schottky device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7071518B2 (https=) |
| EP (1) | EP1749343A4 (https=) |
| JP (1) | JP5290574B2 (https=) |
| CN (1) | CN100539181C (https=) |
| TW (1) | TWI372470B (https=) |
| WO (1) | WO2005119913A2 (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809386B2 (en) * | 2002-08-29 | 2004-10-26 | Micron Technology, Inc. | Cascode I/O driver with improved ESD operation |
| JP4845410B2 (ja) * | 2005-03-31 | 2011-12-28 | 株式会社リコー | 半導体装置 |
| US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
| US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
| EP2631951B1 (en) | 2006-08-17 | 2017-10-11 | Cree, Inc. | High power insulated gate bipolar transistors |
| JP5358882B2 (ja) * | 2007-02-09 | 2013-12-04 | サンケン電気株式会社 | 整流素子を含む複合半導体装置 |
| US7777257B2 (en) * | 2007-02-14 | 2010-08-17 | Freescale Semiconductor, Inc. | Bipolar Schottky diode and method |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| JP5109506B2 (ja) * | 2007-07-03 | 2012-12-26 | 株式会社デンソー | 半導体装置 |
| US7692483B2 (en) * | 2007-10-10 | 2010-04-06 | Atmel Corporation | Apparatus and method for preventing snap back in integrated circuits |
| US7745845B2 (en) * | 2008-04-23 | 2010-06-29 | Fairchild Semiconductor Corporation | Integrated low leakage schottky diode |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| US8085604B2 (en) * | 2008-12-12 | 2011-12-27 | Atmel Corporation | Snap-back tolerant integrated circuits |
| US7808069B2 (en) * | 2008-12-31 | 2010-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Robust structure for HVPW Schottky diode |
| US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
| US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
| US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
| US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
| US8681518B2 (en) | 2009-07-21 | 2014-03-25 | Cree, Inc. | High speed rectifier circuit |
| US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
| CN102088020B (zh) * | 2009-12-08 | 2012-10-03 | 上海华虹Nec电子有限公司 | 功率mos晶体管内集成肖特基二极管的器件及制造方法 |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| US8415748B2 (en) | 2010-04-23 | 2013-04-09 | International Business Machines Corporation | Use of epitaxial Ni silicide |
| US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
| US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| WO2013036370A1 (en) | 2011-09-11 | 2013-03-14 | Cree, Inc. | High current density power module comprising transistors with improved layout |
| JP2014027253A (ja) * | 2012-06-22 | 2014-02-06 | Toshiba Corp | 整流回路 |
| CN105789333A (zh) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
| US10573637B2 (en) * | 2016-11-21 | 2020-02-25 | Nexperia B.V. | Carrier bypass for electrostatic discharge |
| WO2018191217A1 (en) * | 2017-04-10 | 2018-10-18 | Schottky Lsi, Inc. | Schottky-cmos asynchronous logic cells |
| CN109088533A (zh) * | 2018-09-17 | 2018-12-25 | 苏州芯智瑞微电子有限公司 | 一种具有可拓展反向击穿电压新型二极管拓扑结构 |
| US12495576B2 (en) * | 2022-05-03 | 2025-12-09 | Fast SiC Semiconductor Incorporated | Silicon carbide semiconductor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4227098A (en) * | 1979-02-21 | 1980-10-07 | General Electric Company | Solid state relay |
| US4253162A (en) * | 1979-08-28 | 1981-02-24 | Rca Corporation | Blocked source node field-effect circuitry |
| US5614755A (en) | 1993-04-30 | 1997-03-25 | Texas Instruments Incorporated | High voltage Shottky diode |
| US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
| US5818084A (en) * | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
| JP3348711B2 (ja) * | 1999-12-03 | 2002-11-20 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
| JP2001230425A (ja) * | 2000-02-17 | 2001-08-24 | Seiko Epson Corp | Ｍｏｓダイオード回路 |
| KR20030001823A (ko) * | 2001-06-28 | 2003-01-08 | 주식회사 하이닉스반도체 | 반도체 소자 |
-
2004
- 2004-05-28 US US10/856,602 patent/US7071518B2/en not_active Expired - Fee Related
-
2005
- 2005-04-26 JP JP2007515097A patent/JP5290574B2/ja not_active Expired - Fee Related
- 2005-04-26 EP EP05739044A patent/EP1749343A4/en not_active Withdrawn
- 2005-04-26 CN CNB2005800173372A patent/CN100539181C/zh not_active Expired - Fee Related
- 2005-04-26 WO PCT/US2005/014323 patent/WO2005119913A2/en not_active Ceased
- 2005-05-19 TW TW094116366A patent/TWI372470B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005119913A2 (en) | 2005-12-15 |
| JP2008501238A (ja) | 2008-01-17 |
| CN101142684A (zh) | 2008-03-12 |
| EP1749343A2 (en) | 2007-02-07 |
| JP5290574B2 (ja) | 2013-09-18 |
| CN100539181C (zh) | 2009-09-09 |
| TW200610193A (en) | 2006-03-16 |
| EP1749343A4 (en) | 2007-11-14 |
| US7071518B2 (en) | 2006-07-04 |
| WO2005119913A3 (en) | 2007-05-24 |
| US20050275055A1 (en) | 2005-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |