CN113178485A - 一种P型槽栅结合极化层结构的GaN HEMT器件 - Google Patents

一种P型槽栅结合极化层结构的GaN HEMT器件 Download PDF

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CN113178485A
CN113178485A CN202110462035.7A CN202110462035A CN113178485A CN 113178485 A CN113178485 A CN 113178485A CN 202110462035 A CN202110462035 A CN 202110462035A CN 113178485 A CN113178485 A CN 113178485A
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冯全源
杨红锦
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Abstract

本发明公开了一种P型槽栅结合极化层结构的GaN HEMT器件，包括依次层叠的衬底层、缓冲层、沟道层、势垒层和钝化层；沟道层、势垒层和钝化层的长度小于缓冲层的长度以在两侧形成缺口，并在两侧的缺口分别设置漏极和源极；势垒层和钝化层的相同位置分别设置槽栅和通孔，并在槽栅和通孔内设置P型栅极；势垒层与钝化层之间还设置有极化层。本发明克服了传统P‑GaN栅HEMT器件的阈值电压普遍偏低的问题，能够大幅度提升GaN HEMT器件的阈值电压。

Description

一种P型槽栅结合极化层结构的GaN HEMT器件
技术领域
本发明涉及AlGaN/GaN HEMT器件技术领域，具体涉及一种P型槽栅结合极化层结构的GaN HEMT器件。
背景技术
随着手机无线充电，电动汽车等新兴电子产业的发展，目前电源转换模块需要实现高速高效的工作模式，且更加小型化是目前的主流发展趋势。这就需要作为电源转换模块核心的半导体功率开关器件在高速开关的状态下功耗很低，且整个模块简单，能够实现小型化的设计要求。目前主流的半导体功率器件是基于Si材料的半导体器件，这种材料已经无法满足更大功率器件的要求。而作为第三代宽禁带半导体的GaN(氮化镓)材料，本身具有极强的自发极化效应，当采用AlGaN/GaN异质结结构时，AlGaN势垒层的自发极化与压电极化效应叠加，产生的内建电场使表面态电离出高浓度的电子，从而使AlGaN/GaN异质结界面处形成高浓度的二维电子气(2DEG)。且GaN材料具有宽禁带，高临界击穿电场等优点。目前AlGaN/GaN HEMT器件在高压、高功率应用领域已经成为热点。
AlGaN/GaN HEMT器件研究主要集中在如何实现增强型的AlGaN/GaN HEMT，由于2DEG的存在使常规的AlGaN/GaN HEMT在不加栅压情况下呈导通状态，即耗尽型器件。为了便于对器件的控制，需要将AlGaN/GaN HEMT设置成常关状态，即增强型器件。且GaN材料本身存在Mg掺杂激活能高的问题，常温下空穴电离率只有3％左右，导致P型GaN栅HEMT的阈值电压普遍偏低，限制了阈值电压的提升。
发明内容
针对现有技术中的上述不足，本发明提供了一种P型槽栅结合极化层结构的GaNHEMT器件。
为了达到上述发明目的，本发明采用的技术方案为：
一种P型槽栅结合极化层结构的GaN HEMT器件，包括依次层叠的衬底层、缓冲层、沟道层、势垒层和钝化层；
所述沟道层、势垒层和钝化层的长度小于所述缓冲层的长度以在两侧形成缺口，并在两侧的所述缺口分别设置漏极和源极；
所述势垒层和钝化层的相同位置分别设置槽栅和通孔，并在所述槽栅和通孔内设置P型栅极。
进一步地，所述缓冲层为GaN缓冲层，所述沟道层为GaN沟道层，所述势垒层为AlGaN势垒层，所述钝化层为SiN钝化层，所述P型栅极为P型GaN槽栅。
进一步地，所述漏极和源极与所述GaN缓冲层直接接触构成欧姆接触。
进一步地，所述P型GaN槽栅与金属接触构成肖特基接触。
进一步地，所述AlGaN势垒层与SiN钝化层之间还设置有极化层。
进一步地，所述极化层为AlGaN极化层。
进一步地，所述AlGaN极化层中Al组分小于所述AlGaN势垒层中Al组分。
进一步地，所述AlGaN极化层采用具有极化效应且极化强度小于所述AlGaN势垒层中AlGaN的材料。
进一步地，所述AlGaN极化层的长度、数量和Al组分含量可调节。
本发明具有以下有益效果：
(1)本发明克服了传统P-GaN栅HEMT器件的阈值电压普遍小于1V的问题，大幅度提升了GaN HEMT器件的阈值电压；
(2)本发明通过在AlGaN势垒层与SiN钝化层之间设置有极化层，实现对沟道电场进行调节，使得电场分布更加均匀，进一步提升GaN HEMT器件的阈值电压和反向击穿电压。
附图说明
图1为本发明的P型槽栅结合极化层结构的GaN HEMT器件结构示意图；
图2为传统P型栅结构和P型栅结合槽栅结构的阈值电压对比图；
图3为本发明的GaN HEMT器件在不同槽栅深度下对应的阈值电压曲线示意图。
其中附图标记为：101、衬底层，102、缓冲层，103、沟道层，104、势垒层，105、钝化层，106、漏极，107、源极，108、P型栅极，109、极化层。
具体实施方式
下面对本发明的具体实施方式进行描述，以便于本技术领域的技术人员理解本发明，但应该清楚，本发明不限于具体实施方式的范围，对本技术领域的普通技术人员来讲，只要各种变化在所附的权利要求限定和确定的本发明的精神和范围内，这些变化是显而易见的，一切利用本发明构思的发明创造均在保护之列。
参照图1，本发明实施例提供了一种P型槽栅结合极化层结构的GaN HEMT器件，包括依次层叠的衬底层101、缓冲层102、沟道层103、势垒层104和钝化层105；
沟道层103、势垒层104和钝化层105的长度小于缓冲层102的长度以在两侧形成缺口，并在两侧的缺口分别设置漏极106和源极107；
势垒层104和钝化层105的相同位置分别设置槽栅和通孔，并在槽栅和通孔内设置P型栅极108。
在本实施例中，缓冲层102为GaN缓冲层，沟道层103为GaN沟道层，势垒层104为AlGaN势垒层，钝化层105为SiN钝化层，P型栅极108为P型GaN槽栅。
漏极106和源极107与GaN缓冲层直接接触构成欧姆接触。
P型GaN槽栅与金属接触构成肖特基接触。
本发明采用在势垒层104设置槽栅结构的方式，很好的利用了P-GaN栅极和槽栅提高阈值电压的优点，解决了P-GaN栅HEMT阈值电压过低的问题，其中可以控制槽栅的深度来控制阈值电压增大的幅度。
参照图2，为传统P型栅结构和本发明P型栅结合槽栅结构的阈值电压对比图，其中取电流为1e-7时的电压值为器件的阈值电压，可以看出本发明P型栅结合槽栅结构可以大幅度提升阈值电压。
在本实施例中，AlGaN势垒层与SiN钝化层之间还设置有极化层109。具体而言，极化层109为AlGaN极化层。
本发明的AlGaN极化层中Al组分小于所述AlGaN势垒层中Al组分，或者AlGaN极化层可以采用具有极化效应且极化强度小于所述AlGaN势垒层中AlGaN的材料，从而使得GaNHEMT器件的阈值电压进一步提升。
本发明中极化层109结构也可进行优化，通过调整极化层109的位置、AlGaN中Al组分的含量、极化层长度、极化层的数量等进行优化，最终选择最优的结构。
参照图3，为不同槽栅深度下对应的阈值电压，其中取电流为1e-7时的电压值为阈值电压，可以看出，随着槽栅深度的增加，阈值电压也随之增加。
本发明中应用了具体实施例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。
本领域的普通技术人员将会意识到，这里所述的实施例是为了帮助读者理解本发明的原理，应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合，这些变形和组合仍然在本发明的保护范围内。

Claims (9)

1.一种P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，包括依次层叠的衬底层(101)、缓冲层(102)、沟道层(103)、势垒层(104)和钝化层(105)；
所述沟道层(103)、势垒层(104)和钝化层(105)的长度小于所述缓冲层(102)的长度以在两侧形成缺口，并在两侧的所述缺口分别设置漏极(106)和源极(107)；
所述势垒层(104)和钝化层(105)的相同位置分别设置槽栅和通孔，并在所述槽栅和通孔内设置P型栅极(108)。
2.根据权利要求1所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述缓冲层(102)为GaN缓冲层，所述沟道层(103)为GaN沟道层，所述势垒层(104)为AlGaN势垒层，所述钝化层(105)为SiN钝化层，所述P型栅极(108)为P型GaN槽栅。
3.根据权利要求2所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述漏极(106)和源极(107)与所述GaN缓冲层直接接触构成欧姆接触。
4.根据权利要求3所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述P型GaN槽栅与金属接触构成肖特基接触。
5.根据权利要求4所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述AlGaN势垒层与SiN钝化层之间还设置有极化层(109)。
6.根据权利要求5所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述极化层(109)为AlGaN极化层。
7.根据权利要求6所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述AlGaN极化层中Al组分小于所述AlGaN势垒层中Al组分。
8.根据权利要求6所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述AlGaN极化层采用具有极化效应且极化强度小于所述AlGaN势垒层中AlGaN的材料。
9.根据权利要求7或8所述的P型槽栅结合极化层结构的GaN HEMT器件，其特征在于，所述AlGaN极化层的长度、数量和Al组分含量可调节。
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