JP5285612B2 - 半導体デバイスおよび相互接続構造体の形成方法 - Google Patents
半導体デバイスおよび相互接続構造体の形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000004888 barrier function Effects 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- CNCZOAMEKQQFOA-HZQGBTCBSA-N 4-[(2s,3s,4r,5r,6r)-4,5-bis(3-carboxypropanoyloxy)-2-methyl-6-[[(2r,3r,4s,5r,6s)-3,4,5-tris(3-carboxypropanoyloxy)-6-[2-(3,4-dihydroxyphenyl)-5,7-dihydroxy-4-oxochromen-3-yl]oxyoxan-2-yl]methoxy]oxan-3-yl]oxy-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)O[C@@H]1[C@H](OC(=O)CCC(O)=O)[C@@H](OC(=O)CCC(O)=O)[C@H](C)O[C@H]1OC[C@@H]1[C@@H](OC(=O)CCC(O)=O)[C@H](OC(=O)CCC(O)=O)[C@@H](OC(=O)CCC(O)=O)[C@H](OC=2C(C3=C(O)C=C(O)C=C3OC=2C=2C=C(O)C(O)=CC=2)=O)O1 CNCZOAMEKQQFOA-HZQGBTCBSA-N 0.000 claims description 3
- 235000003976 Ruta Nutrition 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 235000005806 ruta Nutrition 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 240000005746 Ruta graveolens Species 0.000 claims 1
- 239000010410 layer Substances 0.000 description 91
- 239000010949 copper Substances 0.000 description 18
- 239000003989 dielectric material Substances 0.000 description 10
- 230000009977 dual effect Effects 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920000412 polyarylene Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 241001521328 Ruta Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- -1 silsesquioxane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
- H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
12、71:層間誘電体(ILD)層
21:凹部構造部
31:拡散バリア層
32:相互接続構造部
41:部分
61:誘電体キャップ層
100、130:誘電体
105、106、140、145:拡散バリア材料
110、150:ライン
120:キャップ層
122:ハードマスク
148:ビア
Claims (16)
- 少なくとも1つの導電性相互接続部(32)が内部に埋め込まれた誘電体層(12)と、
前記少なくとも1つの導電性相互接続部(32)を囲み、かつ、前記誘電体層(12)及び前記少なくとも1つの導電性相互接続部(32)と接触した状態の拡散バリア層(31)と、
前記誘電体層(12)及び前記少なくとも1つの導電性相互接続部(32)と接触した状態の誘電体キャップ層(61)と、
前記誘電体キャップ層(61)内に延びる前記拡散バリア層(31)の部分(41)と、を有し、
前記キャップ層(61)内に延びる前記拡散バリア層(31)の前記部分(41)は、前記誘電体キャップ層(61)の厚さ全体にわたる、
相互接続構造体を含む半導体デバイス。 - 前記少なくとも1つの導電性相互接続部(32)は、ライン及びビアを含む、請求項1に記載の半導体デバイス。
- 前記少なくとも1つの導電性相互接続部(32)は、Cu、W、Al、及びそれらの合金からなる群から選択される材料からなる、請求項1に記載の半導体デバイス。
- 前記誘電体層(12)は、500Åから10,000Åまでの厚さを有する、請求項1に記載の半導体デバイス。
- 前記拡散バリア層(31)は、Ta、TaN、Ti、TiN、Ru、RuN、RuTa、RuTaN、W、及びWNからなる群から選択される材料からなる、請求項1に記載の半導体デバイス。
- 前記拡散バリア層(31)は、4nmから40nmまでの厚さを有する、請求項1に記載の半導体デバイス。
- 前記誘電体キャップ層(61)は、Si3N4、SiC、SiCN、SiC(N,H)及びSiCHからなる群から選択される材料からなる、請求項1に記載の半導体デバイス。
- 前記誘電体キャップ層(61)内に延びる前記拡散バリア層(31)の前記部分(41)は、5nmから100nmまでの高さを有する、請求項1に記載の半導体デバイス。
- 相互接続構造体を形成する方法であって、
誘電体層(12)上に犠牲誘電体膜(11)を堆積するステップと、
前記誘電体層(12)内にパターン形成された凹部構造部(21)を形成するステップと、
前記凹部構造部(21)内に拡散バリア層(31)を堆積するステップと、
前記拡散バリア層(31)上に導電性金属(32)を堆積し、導電性相互接続構造部(32)を形成するステップと、
前記導電性金属(32)の部分を除去するステップと、
前記犠牲誘電体膜(11)を除去して、前記拡散バリア層(31)の部分(41)を露出させるステップと、
誘電体キャップ層(61)を堆積し、前記誘電体キャップ層(61)内に前記拡散バリア層(31)の部分(41)を埋め込むステップと、
前記誘電体キャップ層(61)を研磨して、前記誘電体キャップ層(61)の表面を前記拡散バリア層(31)の部分(41)と同一平面にするステップと、を含む方法。 - 前記拡散バリア層(31)は、物理気相堆積、化学気相堆積又は原子層堆積によって堆積される、請求項9に記載の方法。
- 前記導電性相互接続構造部(32)は、めっき又はスパッタリングによって堆積される、請求項9に記載の方法。
- 前記導電体相互接続構造部(32)の前記部分は、湿式エッチングにより除去される、請求項9に記載の方法。
- 前記湿式エッチングは、HNO3、HCL、H2SO4、HF及びそれらの組み合わせからなるエッチング溶液中への時間制御された浸漬である、請求項12に記載の方法。
- 前記犠牲誘電体膜(11)は、湿式エッチングを用いて除去される請求項9に記載の方法。
- 前記湿式エッチングは、希HF溶液である、請求項14に記載の方法。
- 前記誘電体キャップ層(61)は、CVD堆積によって堆積される、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/548,298 | 2006-10-11 | ||
US11/548,298 US7531384B2 (en) | 2006-10-11 | 2006-10-11 | Enhanced interconnect structure |
PCT/US2007/081046 WO2008045989A2 (en) | 2006-10-11 | 2007-10-11 | Enhanced interconnect structure |
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Publication Number | Publication Date |
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JP2010507236A JP2010507236A (ja) | 2010-03-04 |
JP5285612B2 true JP5285612B2 (ja) | 2013-09-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009532571A Active JP5285612B2 (ja) | 2006-10-11 | 2007-10-11 | 半導体デバイスおよび相互接続構造体の形成方法 |
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Country | Link |
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US (2) | US7531384B2 (ja) |
EP (1) | EP2084738A4 (ja) |
JP (1) | JP5285612B2 (ja) |
KR (1) | KR101055028B1 (ja) |
CN (1) | CN101523585B (ja) |
WO (1) | WO2008045989A2 (ja) |
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---|---|---|---|---|
US7687877B2 (en) * | 2008-05-06 | 2010-03-30 | International Business Machines Corporation | Interconnect structure with a mushroom-shaped oxide capping layer and method for fabricating same |
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KR20090057053A (ko) | 2009-06-03 |
WO2008045989A3 (en) | 2008-09-12 |
EP2084738A2 (en) | 2009-08-05 |
WO2008045989A2 (en) | 2008-04-17 |
US20080088026A1 (en) | 2008-04-17 |
US7531384B2 (en) | 2009-05-12 |
EP2084738A4 (en) | 2011-10-12 |
CN101523585B (zh) | 2011-08-31 |
US20090200669A1 (en) | 2009-08-13 |
KR101055028B1 (ko) | 2011-08-05 |
CN101523585A (zh) | 2009-09-02 |
JP2010507236A (ja) | 2010-03-04 |
US8129842B2 (en) | 2012-03-06 |
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