JP5275739B2 - センサ素子およびその駆動方法 - Google Patents

センサ素子およびその駆動方法 Download PDF

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Publication number
JP5275739B2
JP5275739B2 JP2008258862A JP2008258862A JP5275739B2 JP 5275739 B2 JP5275739 B2 JP 5275739B2 JP 2008258862 A JP2008258862 A JP 2008258862A JP 2008258862 A JP2008258862 A JP 2008258862A JP 5275739 B2 JP5275739 B2 JP 5275739B2
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Japan
Prior art keywords
diode
turned
electrode
diode element
gate
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Expired - Fee Related
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JP2008258862A
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English (en)
Japanese (ja)
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JP2010092935A (ja
JP2010092935A5 (enExample
Inventor
田中　　勉
真人 高徳
みちる 千田
圭一郎 石原
Original Assignee
株式会社ジャパンディスプレイウェスト
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Priority to JP2008258862A priority Critical patent/JP5275739B2/ja
Priority to TW098130971A priority patent/TWI406400B/zh
Priority to US12/562,317 priority patent/US8456460B2/en
Priority to KR1020090093985A priority patent/KR20100038160A/ko
Priority to CN2009101794110A priority patent/CN101714566B/zh
Publication of JP2010092935A publication Critical patent/JP2010092935A/ja
Publication of JP2010092935A5 publication Critical patent/JP2010092935A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/17—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have potential barriers

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Electronic Switches (AREA)
JP2008258862A 2008-10-03 2008-10-03 センサ素子およびその駆動方法 Expired - Fee Related JP5275739B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008258862A JP5275739B2 (ja) 2008-10-03 2008-10-03 センサ素子およびその駆動方法
TW098130971A TWI406400B (zh) 2008-10-03 2009-09-14 感測元件及其驅動方法，及輸入裝置，具有輸入功能之顯示裝置及通訊元件
US12/562,317 US8456460B2 (en) 2008-10-03 2009-09-18 Sensor element and method of driving sensor element, and input device, display device with input function and communication device
KR1020090093985A KR20100038160A (ko) 2008-10-03 2009-10-01 센서 소자, 센서 소자 구동 방법, 입력 장치, 입력 기능을 구비한 디스플레이 장치, 및 통신 장치
CN2009101794110A CN101714566B (zh) 2008-10-03 2009-10-09 传感器元件、驱动其的方法、输入装置、显示装置和通信装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008258862A JP5275739B2 (ja) 2008-10-03 2008-10-03 センサ素子およびその駆動方法

Publications (3)

Publication Number Publication Date
JP2010092935A JP2010092935A (ja) 2010-04-22
JP2010092935A5 JP2010092935A5 (enExample) 2011-11-10
JP5275739B2 true JP5275739B2 (ja) 2013-08-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008258862A Expired - Fee Related JP5275739B2 (ja) 2008-10-03 2008-10-03 センサ素子およびその駆動方法

Country Status (5)

Country Link
US (1) US8456460B2 (enExample)
JP (1) JP5275739B2 (enExample)
KR (1) KR20100038160A (enExample)
CN (1) CN101714566B (enExample)
TW (1) TWI406400B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040094A1 (ja) * 2009-09-30 2011-04-07 シャープ株式会社 表示装置
JP5398842B2 (ja) 2009-09-30 2014-01-29 シャープ株式会社 表示装置
CN105336752B (zh) * 2014-06-23 2018-08-21 上海箩箕技术有限公司 面阵传感器装置及其形成方法
CN105097941B (zh) * 2015-05-28 2019-02-26 京东方科技集团股份有限公司 一种薄膜晶体管及其制造方法、阵列基板、显示装置
JP6704802B2 (ja) * 2016-06-10 2020-06-03 株式会社ジャパンディスプレイ 入力検出装置および電子装置
FR3083975B1 (fr) 2018-07-20 2020-10-16 Univ Sorbonne Dispositif d'observation oculaire
KR20230089247A (ko) * 2021-12-13 2023-06-20 엘지디스플레이 주식회사 픽셀 회로 및 표시 장치
CN115290953B (zh) * 2022-06-24 2024-05-17 杭州格蓝丰科技有限公司 一种基于动态二极管的自驱动机械信号传感器及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JP2004119719A (ja) * 2002-09-26 2004-04-15 Toshiba Matsushita Display Technology Co Ltd 光センサ用ダイオード、これを用いた画像入力回路、および画像入力回路の駆動方法
US7265740B2 (en) * 2002-08-30 2007-09-04 Toshiba Matsushita Display Technology Co., Ltd. Suppression of leakage current in image acquisition
JP4565815B2 (ja) * 2003-06-27 2010-10-20 三洋電機株式会社 表示装置
JP4737956B2 (ja) * 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
KR100669270B1 (ko) * 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
JP2007524197A (ja) * 2003-12-15 2007-08-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 光センサーを備えたアクティブマトリックス型画素デバイス
JP4599985B2 (ja) * 2004-10-21 2010-12-15 セイコーエプソン株式会社 光検出回路、電気光学装置、および電子機器
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US7636078B2 (en) * 2005-05-20 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
JP2007248956A (ja) * 2006-03-17 2007-09-27 Epson Imaging Devices Corp 電気光学装置および電子機器
JP2007310628A (ja) * 2006-05-18 2007-11-29 Hitachi Displays Ltd 画像表示装置
JP2008122659A (ja) * 2006-11-13 2008-05-29 Seiko Epson Corp 液晶表示装置及び液晶表示装置の製造方法並びに電子機器
US8514165B2 (en) * 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4301297B2 (ja) * 2007-01-19 2009-07-22 エプソンイメージングデバイス株式会社 電気光学装置
CN101625996B (zh) * 2008-07-08 2011-03-23 中芯国际集成电路制造(上海)有限公司 用以减少暗电流的ono侧墙刻蚀工艺

Also Published As

Publication number Publication date
JP2010092935A (ja) 2010-04-22
US20100085339A1 (en) 2010-04-08
US8456460B2 (en) 2013-06-04
TWI406400B (zh) 2013-08-21
TW201027726A (en) 2010-07-16
CN101714566A (zh) 2010-05-26
CN101714566B (zh) 2012-01-04
KR20100038160A (ko) 2010-04-13

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