CN101714566B - 传感器元件、驱动其的方法、输入装置、显示装置和通信装置 - Google Patents

传感器元件、驱动其的方法、输入装置、显示装置和通信装置 Download PDF

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Publication number
CN101714566B
CN101714566B CN2009101794110A CN200910179411A CN101714566B CN 101714566 B CN101714566 B CN 101714566B CN 2009101794110 A CN2009101794110 A CN 2009101794110A CN 200910179411 A CN200910179411 A CN 200910179411A CN 101714566 B CN101714566 B CN 101714566B
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China
Prior art keywords
diode element
diode
gate electrode
semiconductor layer
voltage
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Expired - Fee Related
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CN2009101794110A
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English (en)
Chinese (zh)
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CN101714566A (zh
Inventor
田中勉
高德真人
千田满
石原圭一郎
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Japan Display West Inc
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/17—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have potential barriers

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Electronic Switches (AREA)
CN2009101794110A 2008-10-03 2009-10-09 传感器元件、驱动其的方法、输入装置、显示装置和通信装置 Expired - Fee Related CN101714566B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008258862A JP5275739B2 (ja) 2008-10-03 2008-10-03 センサ素子およびその駆動方法
JP2008-258862 2008-10-03

Publications (2)

Publication Number Publication Date
CN101714566A CN101714566A (zh) 2010-05-26
CN101714566B true CN101714566B (zh) 2012-01-04

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CN2009101794110A Expired - Fee Related CN101714566B (zh) 2008-10-03 2009-10-09 传感器元件、驱动其的方法、输入装置、显示装置和通信装置

Country Status (5)

Country Link
US (1) US8456460B2 (enExample)
JP (1) JP5275739B2 (enExample)
KR (1) KR20100038160A (enExample)
CN (1) CN101714566B (enExample)
TW (1) TWI406400B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102511027B (zh) 2009-09-30 2014-07-30 夏普株式会社 显示装置
CN102511025B (zh) * 2009-09-30 2015-02-04 夏普株式会社 显示装置
CN105336752B (zh) * 2014-06-23 2018-08-21 上海箩箕技术有限公司 面阵传感器装置及其形成方法
CN105097941B (zh) * 2015-05-28 2019-02-26 京东方科技集团股份有限公司 一种薄膜晶体管及其制造方法、阵列基板、显示装置
JP6704802B2 (ja) * 2016-06-10 2020-06-03 株式会社ジャパンディスプレイ 入力検出装置および電子装置
FR3083975B1 (fr) 2018-07-20 2020-10-16 Univ Sorbonne Dispositif d'observation oculaire
KR20230089247A (ko) * 2021-12-13 2023-06-20 엘지디스플레이 주식회사 픽셀 회로 및 표시 장치
CN115290953B (zh) * 2022-06-24 2024-05-17 杭州格蓝丰科技有限公司 一种基于动态二极管的自驱动机械信号传感器及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
US7265740B2 (en) * 2002-08-30 2007-09-04 Toshiba Matsushita Display Technology Co., Ltd. Suppression of leakage current in image acquisition
JP2004119719A (ja) * 2002-09-26 2004-04-15 Toshiba Matsushita Display Technology Co Ltd 光センサ用ダイオード、これを用いた画像入力回路、および画像入力回路の駆動方法
JP4565815B2 (ja) * 2003-06-27 2010-10-20 三洋電機株式会社 表示装置
KR100669270B1 (ko) * 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
JP4737956B2 (ja) * 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
KR20070003784A (ko) * 2003-12-15 2007-01-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 광센서를 가지는 능동 매트릭스 픽셀 디바이스
JP4599985B2 (ja) * 2004-10-21 2010-12-15 セイコーエプソン株式会社 光検出回路、電気光学装置、および電子機器
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
US7636078B2 (en) * 2005-05-20 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2007248956A (ja) * 2006-03-17 2007-09-27 Epson Imaging Devices Corp 電気光学装置および電子機器
JP2007310628A (ja) * 2006-05-18 2007-11-29 Hitachi Displays Ltd 画像表示装置
JP2008122659A (ja) * 2006-11-13 2008-05-29 Seiko Epson Corp 液晶表示装置及び液晶表示装置の製造方法並びに電子機器
US8514165B2 (en) * 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4301297B2 (ja) * 2007-01-19 2009-07-22 エプソンイメージングデバイス株式会社 電気光学装置
CN101625996B (zh) * 2008-07-08 2011-03-23 中芯国际集成电路制造(上海)有限公司 用以减少暗电流的ono侧墙刻蚀工艺

Also Published As

Publication number Publication date
TW201027726A (en) 2010-07-16
TWI406400B (zh) 2013-08-21
US20100085339A1 (en) 2010-04-08
CN101714566A (zh) 2010-05-26
KR20100038160A (ko) 2010-04-13
JP5275739B2 (ja) 2013-08-28
JP2010092935A (ja) 2010-04-22
US8456460B2 (en) 2013-06-04

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Owner name: NIPPON DISPLAY CO., LTD.

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Effective date: 20121115

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Address after: Aichi

Patentee after: Japan display West Co.,Ltd.

Address before: Tokyo, Japan

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Granted publication date: 20120104

Termination date: 20181009

CF01 Termination of patent right due to non-payment of annual fee