TWI406400B - 感測元件及其驅動方法，及輸入裝置，具有輸入功能之顯示裝置及通訊元件 - Google Patents

感測元件及其驅動方法，及輸入裝置，具有輸入功能之顯示裝置及通訊元件 Download PDF

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Publication number
TWI406400B
TWI406400B TW098130971A TW98130971A TWI406400B TW I406400 B TWI406400 B TW I406400B TW 098130971 A TW098130971 A TW 098130971A TW 98130971 A TW98130971 A TW 98130971A TW I406400 B TWI406400 B TW I406400B
Authority
TW
Taiwan
Prior art keywords
diode
diode element
gate
electrode
elements
Prior art date
Application number
TW098130971A
Other languages
English (en)
Chinese (zh)
Other versions
TW201027726A (en
Inventor
Tsutomu Tanaka
Makoto Takatoku
Michiru Senda
Keiichiro Ishihara
Original Assignee
Japan Display West Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display West Inc filed Critical Japan Display West Inc
Publication of TW201027726A publication Critical patent/TW201027726A/zh
Application granted granted Critical
Publication of TWI406400B publication Critical patent/TWI406400B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/17—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have potential barriers

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Electronic Switches (AREA)
TW098130971A 2008-10-03 2009-09-14 感測元件及其驅動方法，及輸入裝置，具有輸入功能之顯示裝置及通訊元件 TWI406400B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008258862A JP5275739B2 (ja) 2008-10-03 2008-10-03 センサ素子およびその駆動方法

Publications (2)

Publication Number Publication Date
TW201027726A TW201027726A (en) 2010-07-16
TWI406400B true TWI406400B (zh) 2013-08-21

Family

ID=42075438

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098130971A TWI406400B (zh) 2008-10-03 2009-09-14 感測元件及其驅動方法，及輸入裝置，具有輸入功能之顯示裝置及通訊元件

Country Status (5)

Country Link
US (1) US8456460B2 (enExample)
JP (1) JP5275739B2 (enExample)
KR (1) KR20100038160A (enExample)
CN (1) CN101714566B (enExample)
TW (1) TWI406400B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040094A1 (ja) * 2009-09-30 2011-04-07 シャープ株式会社 表示装置
JP5398842B2 (ja) 2009-09-30 2014-01-29 シャープ株式会社 表示装置
CN105336752B (zh) * 2014-06-23 2018-08-21 上海箩箕技术有限公司 面阵传感器装置及其形成方法
CN105097941B (zh) * 2015-05-28 2019-02-26 京东方科技集团股份有限公司 一种薄膜晶体管及其制造方法、阵列基板、显示装置
JP6704802B2 (ja) * 2016-06-10 2020-06-03 株式会社ジャパンディスプレイ 入力検出装置および電子装置
FR3083975B1 (fr) 2018-07-20 2020-10-16 Univ Sorbonne Dispositif d'observation oculaire
KR20230089247A (ko) * 2021-12-13 2023-06-20 엘지디스플레이 주식회사 픽셀 회로 및 표시 장치
CN115290953B (zh) * 2022-06-24 2024-05-17 杭州格蓝丰科技有限公司 一种基于动态二极管的自驱动机械信号传感器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200521540A (en) * 2003-08-25 2005-07-01 Toshiba Matsushita Display Tec Display device and photoelectric converter

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US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JP2004119719A (ja) * 2002-09-26 2004-04-15 Toshiba Matsushita Display Technology Co Ltd 光センサ用ダイオード、これを用いた画像入力回路、および画像入力回路の駆動方法
US7265740B2 (en) * 2002-08-30 2007-09-04 Toshiba Matsushita Display Technology Co., Ltd. Suppression of leakage current in image acquisition
JP4565815B2 (ja) * 2003-06-27 2010-10-20 三洋電機株式会社 表示装置
JP4737956B2 (ja) * 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
JP2007524197A (ja) * 2003-12-15 2007-08-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 光センサーを備えたアクティブマトリックス型画素デバイス
JP4599985B2 (ja) * 2004-10-21 2010-12-15 セイコーエプソン株式会社 光検出回路、電気光学装置、および電子機器
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US7636078B2 (en) * 2005-05-20 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
JP2007248956A (ja) * 2006-03-17 2007-09-27 Epson Imaging Devices Corp 電気光学装置および電子機器
JP2007310628A (ja) * 2006-05-18 2007-11-29 Hitachi Displays Ltd 画像表示装置
JP2008122659A (ja) * 2006-11-13 2008-05-29 Seiko Epson Corp 液晶表示装置及び液晶表示装置の製造方法並びに電子機器
US8514165B2 (en) * 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4301297B2 (ja) * 2007-01-19 2009-07-22 エプソンイメージングデバイス株式会社 電気光学装置
CN101625996B (zh) * 2008-07-08 2011-03-23 中芯国际集成电路制造(上海)有限公司 用以减少暗电流的ono侧墙刻蚀工艺

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Publication number Priority date Publication date Assignee Title
TW200521540A (en) * 2003-08-25 2005-07-01 Toshiba Matsushita Display Tec Display device and photoelectric converter

Also Published As

Publication number Publication date
JP2010092935A (ja) 2010-04-22
US20100085339A1 (en) 2010-04-08
US8456460B2 (en) 2013-06-04
TW201027726A (en) 2010-07-16
CN101714566A (zh) 2010-05-26
CN101714566B (zh) 2012-01-04
JP5275739B2 (ja) 2013-08-28
KR20100038160A (ko) 2010-04-13

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