KR20100038160A - 센서 소자, 센서 소자 구동 방법, 입력 장치, 입력 기능을 구비한 디스플레이 장치, 및 통신 장치 - Google Patents

센서 소자, 센서 소자 구동 방법, 입력 장치, 입력 기능을 구비한 디스플레이 장치, 및 통신 장치 Download PDF

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Publication number
KR20100038160A
KR20100038160A KR1020090093985A KR20090093985A KR20100038160A KR 20100038160 A KR20100038160 A KR 20100038160A KR 1020090093985 A KR1020090093985 A KR 1020090093985A KR 20090093985 A KR20090093985 A KR 20090093985A KR 20100038160 A KR20100038160 A KR 20100038160A
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KR
South Korea
Prior art keywords
diode
diode element
elements
gate electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020090093985A
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English (en)
Korean (ko)
Inventor
쯔또무 다나까
마꼬또 다까또꾸
미찌루 센다
게이이찌로 이시하라
Original Assignee
소니 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20100038160A publication Critical patent/KR20100038160A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/17—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have potential barriers

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electronic Switches (AREA)
KR1020090093985A 2008-10-03 2009-10-01 센서 소자, 센서 소자 구동 방법, 입력 장치, 입력 기능을 구비한 디스플레이 장치, 및 통신 장치 Withdrawn KR20100038160A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-258862 2008-10-03
JP2008258862A JP5275739B2 (ja) 2008-10-03 2008-10-03 センサ素子およびその駆動方法

Publications (1)

Publication Number Publication Date
KR20100038160A true KR20100038160A (ko) 2010-04-13

Family

ID=42075438

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090093985A Withdrawn KR20100038160A (ko) 2008-10-03 2009-10-01 센서 소자, 센서 소자 구동 방법, 입력 장치, 입력 기능을 구비한 디스플레이 장치, 및 통신 장치

Country Status (5)

Country Link
US (1) US8456460B2 (enExample)
JP (1) JP5275739B2 (enExample)
KR (1) KR20100038160A (enExample)
CN (1) CN101714566B (enExample)
TW (1) TWI406400B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5398842B2 (ja) 2009-09-30 2014-01-29 シャープ株式会社 表示装置
US20120262424A1 (en) * 2009-09-30 2012-10-18 Sharp Kabushiki Kaisha Display Device
CN105336752B (zh) * 2014-06-23 2018-08-21 上海箩箕技术有限公司 面阵传感器装置及其形成方法
CN105097941B (zh) * 2015-05-28 2019-02-26 京东方科技集团股份有限公司 一种薄膜晶体管及其制造方法、阵列基板、显示装置
JP6704802B2 (ja) * 2016-06-10 2020-06-03 株式会社ジャパンディスプレイ 入力検出装置および電子装置
FR3083975B1 (fr) 2018-07-20 2020-10-16 Univ Sorbonne Dispositif d'observation oculaire
KR20230089247A (ko) * 2021-12-13 2023-06-20 엘지디스플레이 주식회사 픽셀 회로 및 표시 장치
CN115290953B (zh) * 2022-06-24 2024-05-17 杭州格蓝丰科技有限公司 一种基于动态二极管的自驱动机械信号传感器及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
US7265740B2 (en) 2002-08-30 2007-09-04 Toshiba Matsushita Display Technology Co., Ltd. Suppression of leakage current in image acquisition
JP2004119719A (ja) * 2002-09-26 2004-04-15 Toshiba Matsushita Display Technology Co Ltd 光センサ用ダイオード、これを用いた画像入力回路、および画像入力回路の駆動方法
JP4565815B2 (ja) * 2003-06-27 2010-10-20 三洋電機株式会社 表示装置
JP4737956B2 (ja) * 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
KR100669270B1 (ko) * 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
JP2007524197A (ja) * 2003-12-15 2007-08-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 光センサーを備えたアクティブマトリックス型画素デバイス
JP4599985B2 (ja) * 2004-10-21 2010-12-15 セイコーエプソン株式会社 光検出回路、電気光学装置、および電子機器
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
US7636078B2 (en) * 2005-05-20 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2007248956A (ja) * 2006-03-17 2007-09-27 Epson Imaging Devices Corp 電気光学装置および電子機器
JP2007310628A (ja) * 2006-05-18 2007-11-29 Hitachi Displays Ltd 画像表示装置
JP2008122659A (ja) * 2006-11-13 2008-05-29 Seiko Epson Corp 液晶表示装置及び液晶表示装置の製造方法並びに電子機器
US8514165B2 (en) * 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4301297B2 (ja) * 2007-01-19 2009-07-22 エプソンイメージングデバイス株式会社 電気光学装置
CN101625996B (zh) * 2008-07-08 2011-03-23 中芯国际集成电路制造(上海)有限公司 用以减少暗电流的ono侧墙刻蚀工艺

Also Published As

Publication number Publication date
US20100085339A1 (en) 2010-04-08
TW201027726A (en) 2010-07-16
US8456460B2 (en) 2013-06-04
JP5275739B2 (ja) 2013-08-28
JP2010092935A (ja) 2010-04-22
CN101714566A (zh) 2010-05-26
CN101714566B (zh) 2012-01-04
TWI406400B (zh) 2013-08-21

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20091001

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N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20121210

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid