JP5274277B2 - 太陽電池素子の製造方法 - Google Patents

太陽電池素子の製造方法 Download PDF

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Publication number
JP5274277B2
JP5274277B2 JP2009015508A JP2009015508A JP5274277B2 JP 5274277 B2 JP5274277 B2 JP 5274277B2 JP 2009015508 A JP2009015508 A JP 2009015508A JP 2009015508 A JP2009015508 A JP 2009015508A JP 5274277 B2 JP5274277 B2 JP 5274277B2
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thin film
film layer
electrode
silicon substrate
polycrystalline silicon
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Japanese (ja)
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JP2010177264A (ja
JP2010177264A5 (enrdf_load_stackoverflow
Inventor
浩一郎 新楽
学 古茂田
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
JP2009015508A 2009-01-27 2009-01-27 太陽電池素子の製造方法 Expired - Fee Related JP5274277B2 (ja)

Priority Applications (1)

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JP2009015508A JP5274277B2 (ja) 2009-01-27 2009-01-27 太陽電池素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009015508A JP5274277B2 (ja) 2009-01-27 2009-01-27 太陽電池素子の製造方法

Related Child Applications (1)

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JP2013100227A Division JP5566502B2 (ja) 2013-05-10 2013-05-10 太陽電池素子

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JP2010177264A JP2010177264A (ja) 2010-08-12
JP2010177264A5 JP2010177264A5 (enrdf_load_stackoverflow) 2011-08-25
JP5274277B2 true JP5274277B2 (ja) 2013-08-28

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060080A (ja) * 2010-09-13 2012-03-22 Ulvac Japan Ltd 結晶太陽電池及びその製造方法
JP5197714B2 (ja) * 2010-10-29 2013-05-15 三菱電機株式会社 流量検出装置
CN102214720B (zh) * 2011-06-10 2013-07-24 山东力诺太阳能电力股份有限公司 基于p型硅片的背接触异质结太阳电池
JP5773777B2 (ja) * 2011-06-24 2015-09-02 株式会社アルバック ドライエッチング方法
EP2740149B1 (en) * 2011-08-05 2020-05-20 IMEC vzw Method for forming patterns of differently doped regions
JP5956742B2 (ja) * 2011-11-14 2016-07-27 シャープ株式会社 光電変換素子
JP2013105883A (ja) * 2011-11-14 2013-05-30 Sharp Corp 光電変換素子
JPWO2013168515A1 (ja) * 2012-05-10 2016-01-07 シャープ株式会社 光電変換装置およびその製造方法
GB2503513A (en) * 2012-06-29 2014-01-01 Rec Cells Pte Ltd A rear contact heterojunction intrinsic thin layer silicon solar cell
JP6042679B2 (ja) * 2012-09-26 2016-12-14 シャープ株式会社 光電変換素子および光電変換素子の製造方法
JP2014183073A (ja) * 2013-03-18 2014-09-29 Sharp Corp 光電変換素子および光電変換素子の製造方法
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
JP6700654B2 (ja) * 2014-10-21 2020-05-27 シャープ株式会社 ヘテロバックコンタクト型太陽電池とその製造方法
WO2016072415A1 (ja) * 2014-11-07 2016-05-12 シャープ株式会社 光電変換素子
WO2017018379A1 (ja) * 2015-07-24 2017-02-02 京セラ株式会社 太陽電池素子および太陽電池モジュール
JP2017037899A (ja) * 2015-08-07 2017-02-16 シャープ株式会社 太陽電池セル
CN105870215A (zh) * 2016-04-28 2016-08-17 乐叶光伏科技有限公司 一种背面钝化接触电池电极结构及其制备方法
CN106449800B (zh) * 2016-12-07 2019-04-05 天合光能股份有限公司 选择性多晶硅薄膜的钝化接触结构及其制备方法
IT201700004876A1 (it) * 2017-01-18 2018-07-18 Enel Green Power Spa Apparato a cella solare e relativo metodo di produzione per celle singole, tandem e sistemi a eterogiunzione
CN108461554A (zh) * 2018-01-29 2018-08-28 君泰创新（北京）科技有限公司 全背接触式异质结太阳能电池及其制备方法
CN109728105A (zh) * 2018-12-28 2019-05-07 苏州腾晖光伏技术有限公司 P型单晶硅电池背面及在其应用隧穿氧钝化接触的方法
CN110838528B (zh) * 2019-10-29 2021-07-06 协鑫集成科技股份有限公司 一种后掺杂式n型接触钝化电池
CN112289873B (zh) 2020-10-30 2022-05-20 浙江晶科能源有限公司 太阳能电池
JP2021013044A (ja) * 2020-11-06 2021-02-04 シャープ株式会社 光電変換素子
CN114784148B (zh) * 2022-06-15 2022-09-23 浙江晶科能源有限公司 太阳能电池的制备方法及太阳能电池、光伏组件
CN115207163B (zh) * 2022-07-25 2024-06-14 正泰新能科技股份有限公司 一种硅片制绒方法、太阳能电池及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617080A (en) * 1979-07-20 1981-02-18 Japan Solar Energ Kk Ribbon crystalline solar cell
JP3998619B2 (ja) * 2003-09-24 2007-10-31 三洋電機株式会社 光起電力素子およびその製造方法
JP4155899B2 (ja) * 2003-09-24 2008-09-24 三洋電機株式会社 光起電力素子の製造方法
JP4511146B2 (ja) * 2003-09-26 2010-07-28 三洋電機株式会社 光起電力素子およびその製造方法
JP2005333016A (ja) * 2004-05-20 2005-12-02 Sharp Corp 裏面電極型太陽電池および裏面電極型太陽電池の製造方法
JP2006273668A (ja) * 2005-03-29 2006-10-12 Kyocera Corp 半導体インゴットの製造方法
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法

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