JP5266641B2 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

Info

Publication number
JP5266641B2
JP5266641B2 JP2006532735A JP2006532735A JP5266641B2 JP 5266641 B2 JP5266641 B2 JP 5266641B2 JP 2006532735 A JP2006532735 A JP 2006532735A JP 2006532735 A JP2006532735 A JP 2006532735A JP 5266641 B2 JP5266641 B2 JP 5266641B2
Authority
JP
Japan
Prior art keywords
optical system
projection optical
illumination
exposure apparatus
adjustment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006532735A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2006025408A1 (ja
Inventor
祐作 上原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2006532735A priority Critical patent/JP5266641B2/ja
Publication of JPWO2006025408A1 publication Critical patent/JPWO2006025408A1/ja
Application granted granted Critical
Publication of JP5266641B2 publication Critical patent/JP5266641B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006532735A 2004-08-31 2005-08-30 露光装置及びデバイス製造方法 Expired - Fee Related JP5266641B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006532735A JP5266641B2 (ja) 2004-08-31 2005-08-30 露光装置及びデバイス製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004251877 2004-08-31
JP2004251877 2004-08-31
JP2006532735A JP5266641B2 (ja) 2004-08-31 2005-08-30 露光装置及びデバイス製造方法
PCT/JP2005/015800 WO2006025408A1 (ja) 2004-08-31 2005-08-30 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JPWO2006025408A1 JPWO2006025408A1 (ja) 2008-05-08
JP5266641B2 true JP5266641B2 (ja) 2013-08-21

Family

ID=36000058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006532735A Expired - Fee Related JP5266641B2 (ja) 2004-08-31 2005-08-30 露光装置及びデバイス製造方法

Country Status (3)

Country Link
JP (1) JP5266641B2 (OSRAM)
TW (1) TW200619865A (OSRAM)
WO (1) WO2006025408A1 (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10423082B2 (en) 2012-04-18 2019-09-24 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of changing an optical wavefront in such an apparatus
JP2021005073A (ja) * 2019-06-25 2021-01-14 キヤノン株式会社 露光装置、露光方法および物品製造方法
US11474439B2 (en) 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
US11640119B2 (en) 2019-09-19 2023-05-02 Canon Kabushiki Kaisha Exposure method, exposure apparatus, article manufacturing method, and method of manufacturing semiconductor device
US12393128B2 (en) 2022-04-14 2025-08-19 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and article manufacturing method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006045075A1 (de) 2006-09-21 2008-04-03 Carl Zeiss Smt Ag Steuerbares optisches Element
SG143178A1 (en) * 2006-11-27 2008-06-27 Asml Netherlands Bv Lithographic apparatus, device manufacturing method and computer program product
US7903234B2 (en) 2006-11-27 2011-03-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
KR101492287B1 (ko) 2007-03-27 2015-02-11 칼 짜이스 에스엠테 게엠베하 편평하게 조사된 보정광을 이용한 광학 소자의 보정
US7692766B2 (en) * 2007-05-04 2010-04-06 Asml Holding Nv Lithographic apparatus
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
WO2010098299A1 (ja) * 2009-02-24 2010-09-02 株式会社ニコン 光学素子の保持装置、光学系、及び露光装置
CN112965341B (zh) 2015-11-20 2024-06-28 Asml荷兰有限公司 光刻设备和操作光刻设备的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088178A (ja) * 1994-04-22 1996-01-12 Canon Inc 投影露光装置及びデバイスの製造方法
JPH09232213A (ja) * 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JPH11258498A (ja) * 1998-03-13 1999-09-24 Nikon Corp 投影レンズ及び走査型露光装置
JPH11305419A (ja) * 1998-02-18 1999-11-05 Nikon Corp フォトマスク、収差補正板、及び露光装置
JP2001076993A (ja) * 1999-09-01 2001-03-23 Canon Inc 露光方法及びそれを用いた走査型露光装置
JP2001217189A (ja) * 2000-01-05 2001-08-10 Carl Zeiss:Fa 光学システム
JP2001237180A (ja) * 1999-12-29 2001-08-31 Carl Zeiss:Fa 光学装置
JP2003234276A (ja) * 2002-02-07 2003-08-22 Nikon Corp 露光装置及び光学装置、デバイス製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088178A (ja) * 1994-04-22 1996-01-12 Canon Inc 投影露光装置及びデバイスの製造方法
JPH09232213A (ja) * 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JPH11305419A (ja) * 1998-02-18 1999-11-05 Nikon Corp フォトマスク、収差補正板、及び露光装置
JPH11258498A (ja) * 1998-03-13 1999-09-24 Nikon Corp 投影レンズ及び走査型露光装置
JP2001076993A (ja) * 1999-09-01 2001-03-23 Canon Inc 露光方法及びそれを用いた走査型露光装置
JP2001237180A (ja) * 1999-12-29 2001-08-31 Carl Zeiss:Fa 光学装置
JP2001217189A (ja) * 2000-01-05 2001-08-10 Carl Zeiss:Fa 光学システム
JP2003234276A (ja) * 2002-02-07 2003-08-22 Nikon Corp 露光装置及び光学装置、デバイス製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10423082B2 (en) 2012-04-18 2019-09-24 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of changing an optical wavefront in such an apparatus
JP2021005073A (ja) * 2019-06-25 2021-01-14 キヤノン株式会社 露光装置、露光方法および物品製造方法
US11474439B2 (en) 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
US11640119B2 (en) 2019-09-19 2023-05-02 Canon Kabushiki Kaisha Exposure method, exposure apparatus, article manufacturing method, and method of manufacturing semiconductor device
US12393128B2 (en) 2022-04-14 2025-08-19 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and article manufacturing method

Also Published As

Publication number Publication date
TW200619865A (en) 2006-06-16
JPWO2006025408A1 (ja) 2008-05-08
TWI315452B (OSRAM) 2009-10-01
WO2006025408A1 (ja) 2006-03-09

Similar Documents

Publication Publication Date Title
JP5099933B2 (ja) 露光方法及び装置、並びにデバイス製造方法
US6975387B2 (en) Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing micro device
JP4692753B2 (ja) 露光方法及び装置、並びにデバイス製造方法
JP2006073584A (ja) 露光装置及び方法並びにデバイス製造方法
JPWO2007000984A1 (ja) 露光方法及び露光装置、並びにデバイス製造方法
JP5266641B2 (ja) 露光装置及びデバイス製造方法
JP2003092253A (ja) 照明光学系、露光装置、及びマイクロデバイスの製造方法
JPWO2002063664A1 (ja) 露光装置及び露光方法、並びにデバイス製造方法
JP2004064076A (ja) 変形ミラー構造体、変形ミラーの制御方法及び露光装置
US20100290020A1 (en) Optical apparatus, exposure apparatus, exposure method, and method for producing device
JP2005311020A (ja) 露光方法及びデバイス製造方法
JP2013161992A (ja) 変形可能な反射光学素子、光学系、及び露光装置
JP2005051147A (ja) 露光方法及び露光装置
US7385672B2 (en) Exposure apparatus and method
WO1999018604A1 (en) Projection exposure method and apparatus
JP4147574B2 (ja) 波面収差計測方法、投影光学系の調整方法及び露光方法、並びに露光装置の製造方法
JP2010067866A (ja) 露光方法及び装置、並びにデバイス製造方法
JP2003045795A (ja) 光学特性計測方法、投影光学系の調整方法及び露光方法、並びに露光装置の製造方法
JP2004319780A (ja) 露光方法及び露光装置並びにデバイス製造方法
JP2003100612A (ja) 面位置検出装置、合焦装置の調整方法、面位置検出方法、露光装置及びデバイスの製造方法
JP2005051145A (ja) 露光方法及び露光装置
JP2004146732A (ja) 露光方法及び露光装置
JP2009111175A (ja) 照明光学装置、露光装置及びデバイスの製造方法
JP2004158689A (ja) 走査型露光方法及び走査型露光装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080701

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100402

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110913

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121002

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130409

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130422

R150 Certificate of patent or registration of utility model

Ref document number: 5266641

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees