JP5259954B2 - 基板上に歪層を製造する方法と層構造 - Google Patents

基板上に歪層を製造する方法と層構造 Download PDF

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JP5259954B2
JP5259954B2 JP2006504293A JP2006504293A JP5259954B2 JP 5259954 B2 JP5259954 B2 JP 5259954B2 JP 2006504293 A JP2006504293 A JP 2006504293A JP 2006504293 A JP2006504293 A JP 2006504293A JP 5259954 B2 JP5259954 B2 JP 5259954B2
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layer
strained
silicon
substrate
region
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JP2006524426A5 (https=
JP2006524426A (ja
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マントル・ジークフリート
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フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2006504293A 2003-04-22 2004-04-08 基板上に歪層を製造する方法と層構造 Expired - Lifetime JP5259954B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10318283.7 2003-04-22
DE10318283A DE10318283A1 (de) 2003-04-22 2003-04-22 Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
PCT/DE2004/000736 WO2004095552A2 (de) 2003-04-22 2004-04-08 Verfahren zur herstellung einer verspannten schicht auf einem substrat und schichtstruktur

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JP2006524426A JP2006524426A (ja) 2006-10-26
JP2006524426A5 JP2006524426A5 (https=) 2012-10-04
JP5259954B2 true JP5259954B2 (ja) 2013-08-07

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US (2) US7615471B2 (https=)
EP (1) EP1616345A2 (https=)
JP (1) JP5259954B2 (https=)
DE (1) DE10318283A1 (https=)
WO (1) WO2004095552A2 (https=)

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US7202124B2 (en) * 2004-10-01 2007-04-10 Massachusetts Institute Of Technology Strained gettering layers for semiconductor processes
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US8105908B2 (en) * 2005-06-23 2012-01-31 Applied Materials, Inc. Methods for forming a transistor and modulating channel stress
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US7339230B2 (en) * 2006-01-09 2008-03-04 International Business Machines Corporation Structure and method for making high density mosfet circuits with different height contact lines
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US7494886B2 (en) 2007-01-12 2009-02-24 International Business Machines Corporation Uniaxial strain relaxation of biaxial-strained thin films using ion implantation
US8471307B2 (en) * 2008-06-13 2013-06-25 Texas Instruments Incorporated In-situ carbon doped e-SiGeCB stack for MOS transistor
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US8003491B2 (en) * 2008-10-30 2011-08-23 Corning Incorporated Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation
US9059201B2 (en) * 2010-04-28 2015-06-16 Acorn Technologies, Inc. Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation
US8361889B2 (en) * 2010-07-06 2013-01-29 International Business Machines Corporation Strained semiconductor-on-insulator by addition and removal of atoms in a semiconductor-on-insulator
US8822306B2 (en) * 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
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DE102010064290B3 (de) * 2010-12-28 2012-04-19 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verformungserhöhung in Transistoren mit einem eingebetteten verformungsinduzierenden Halbleitermaterial durch Kondensation der legierungsbildenden Substanz
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EP2741320B1 (en) * 2012-12-05 2020-06-17 IMEC vzw Manufacturing method of a finfet device with dual-strained channels
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US9269714B2 (en) * 2013-06-10 2016-02-23 Globalfoundries Inc. Device including a transistor having a stressed channel region and method for the formation thereof
FR3041146B1 (fr) * 2015-09-11 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en tension d'un film semi-conducteur
US9871057B2 (en) * 2016-03-03 2018-01-16 Globalfoundries Inc. Field-effect transistors with a non-relaxed strained channel
FR3050569B1 (fr) * 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication amelioree de silicium contraint en tension sur isolant par amorphisation puis recristallisation
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Publication number Publication date
US20090298301A1 (en) 2009-12-03
US20060220127A1 (en) 2006-10-05
DE10318283A1 (de) 2004-11-25
WO2004095552A2 (de) 2004-11-04
JP2006524426A (ja) 2006-10-26
US7915148B2 (en) 2011-03-29
US7615471B2 (en) 2009-11-10
WO2004095552A3 (de) 2004-12-02
EP1616345A2 (de) 2006-01-18

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