JP5259954B2 - 基板上に歪層を製造する方法と層構造 - Google Patents

基板上に歪層を製造する方法と層構造 Download PDF

Info

Publication number
JP5259954B2
JP5259954B2 JP2006504293A JP2006504293A JP5259954B2 JP 5259954 B2 JP5259954 B2 JP 5259954B2 JP 2006504293 A JP2006504293 A JP 2006504293A JP 2006504293 A JP2006504293 A JP 2006504293A JP 5259954 B2 JP5259954 B2 JP 5259954B2
Authority
JP
Japan
Prior art keywords
layer
strained
silicon
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2006504293A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006524426A5 (enExample
JP2006524426A (ja
Inventor
マントル・ジークフリート
Original Assignee
フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング filed Critical フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング
Publication of JP2006524426A publication Critical patent/JP2006524426A/ja
Publication of JP2006524426A5 publication Critical patent/JP2006524426A5/ja
Application granted granted Critical
Publication of JP5259954B2 publication Critical patent/JP5259954B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2006504293A 2003-04-22 2004-04-08 基板上に歪層を製造する方法と層構造 Expired - Lifetime JP5259954B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10318283.7 2003-04-22
DE10318283A DE10318283A1 (de) 2003-04-22 2003-04-22 Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
PCT/DE2004/000736 WO2004095552A2 (de) 2003-04-22 2004-04-08 Verfahren zur herstellung einer verspannten schicht auf einem substrat und schichtstruktur

Publications (3)

Publication Number Publication Date
JP2006524426A JP2006524426A (ja) 2006-10-26
JP2006524426A5 JP2006524426A5 (enExample) 2012-10-04
JP5259954B2 true JP5259954B2 (ja) 2013-08-07

Family

ID=33304879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006504293A Expired - Lifetime JP5259954B2 (ja) 2003-04-22 2004-04-08 基板上に歪層を製造する方法と層構造

Country Status (5)

Country Link
US (2) US7615471B2 (enExample)
EP (1) EP1616345A2 (enExample)
JP (1) JP5259954B2 (enExample)
DE (1) DE10318283A1 (enExample)
WO (1) WO2004095552A2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10318284A1 (de) * 2003-04-22 2004-11-25 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
US7202145B2 (en) * 2004-06-03 2007-04-10 Taiwan Semiconductor Manufacturing Company Strained Si formed by anneal
DE102004048096A1 (de) * 2004-09-30 2006-04-27 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
US7202124B2 (en) * 2004-10-01 2007-04-10 Massachusetts Institute Of Technology Strained gettering layers for semiconductor processes
JP4654710B2 (ja) * 2005-02-24 2011-03-23 信越半導体株式会社 半導体ウェーハの製造方法
US8105908B2 (en) 2005-06-23 2012-01-31 Applied Materials, Inc. Methods for forming a transistor and modulating channel stress
KR100673020B1 (ko) 2005-12-20 2007-01-24 삼성전자주식회사 전계효과 소오스/드레인 영역을 가지는 반도체 장치
US7339230B2 (en) * 2006-01-09 2008-03-04 International Business Machines Corporation Structure and method for making high density mosfet circuits with different height contact lines
DE102006004870A1 (de) 2006-02-02 2007-08-16 Siltronic Ag Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur
DE102006010273B4 (de) * 2006-03-02 2010-04-15 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer verspannten Schicht auf einem spannungskompensierten Schichtstapel mit geringer Defektdichte, Schichtstapel und dessen Verwendung
US7494886B2 (en) 2007-01-12 2009-02-24 International Business Machines Corporation Uniaxial strain relaxation of biaxial-strained thin films using ion implantation
US8471307B2 (en) * 2008-06-13 2013-06-25 Texas Instruments Incorporated In-situ carbon doped e-SiGeCB stack for MOS transistor
DE102008035816B4 (de) 2008-07-31 2011-08-25 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials
TWI430338B (zh) * 2008-10-30 2014-03-11 Corning Inc 使用定向剝離作用製造絕緣體上半導體結構之方法及裝置
US8003491B2 (en) * 2008-10-30 2011-08-23 Corning Incorporated Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation
US9059201B2 (en) * 2010-04-28 2015-06-16 Acorn Technologies, Inc. Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation
US8361889B2 (en) * 2010-07-06 2013-01-29 International Business Machines Corporation Strained semiconductor-on-insulator by addition and removal of atoms in a semiconductor-on-insulator
US8404562B2 (en) 2010-09-30 2013-03-26 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8822306B2 (en) 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
DE102010064290B3 (de) * 2010-12-28 2012-04-19 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verformungserhöhung in Transistoren mit einem eingebetteten verformungsinduzierenden Halbleitermaterial durch Kondensation der legierungsbildenden Substanz
US8859348B2 (en) * 2012-07-09 2014-10-14 International Business Machines Corporation Strained silicon and strained silicon germanium on insulator
EP2741320B1 (en) * 2012-12-05 2020-06-17 IMEC vzw Manufacturing method of a finfet device with dual-strained channels
FR3003686B1 (fr) * 2013-03-20 2016-11-04 St Microelectronics Crolles 2 Sas Procede de formation d'une couche de silicium contraint
US9269714B2 (en) * 2013-06-10 2016-02-23 Globalfoundries Inc. Device including a transistor having a stressed channel region and method for the formation thereof
FR3041146B1 (fr) * 2015-09-11 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en tension d'un film semi-conducteur
US9871057B2 (en) * 2016-03-03 2018-01-16 Globalfoundries Inc. Field-effect transistors with a non-relaxed strained channel
FR3050569B1 (fr) * 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication amelioree de silicium contraint en tension sur isolant par amorphisation puis recristallisation
WO2018004527A1 (en) * 2016-06-28 2018-01-04 Intel Corporation Cell for n-negative differential resistance (ndr) latch
US9818875B1 (en) * 2016-10-17 2017-11-14 International Business Machines Corporation Approach to minimization of strain loss in strained fin field effect transistors
CN111785679A (zh) * 2020-07-29 2020-10-16 联合微电子中心有限责任公司 半导体器件及其制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3627647A (en) * 1969-05-19 1971-12-14 Cogar Corp Fabrication method for semiconductor devices
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5344785A (en) * 1992-03-13 1994-09-06 United Technologies Corporation Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate
US5847419A (en) * 1996-09-17 1998-12-08 Kabushiki Kaisha Toshiba Si-SiGe semiconductor device and method of fabricating the same
JP3645390B2 (ja) * 1997-01-17 2005-05-11 株式会社東芝 半導体装置およびその製造方法
DE19802977A1 (de) * 1998-01-27 1999-07-29 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung einer einkristallinen Schicht auf einem nicht gitterangepaßten Substrat, sowie eine oder mehrere solcher Schichten enthaltendes Bauelement
JP3884203B2 (ja) * 1998-12-24 2007-02-21 株式会社東芝 半導体装置の製造方法
US6326667B1 (en) * 1999-09-09 2001-12-04 Kabushiki Kaisha Toshiba Semiconductor devices and methods for producing semiconductor devices
JP4212228B2 (ja) * 1999-09-09 2009-01-21 株式会社東芝 半導体装置の製造方法
US6690043B1 (en) * 1999-11-26 2004-02-10 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP4226175B2 (ja) * 1999-12-10 2009-02-18 富士通株式会社 半導体装置およびその製造方法
US6429061B1 (en) * 2000-07-26 2002-08-06 International Business Machines Corporation Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
JP2004531054A (ja) * 2001-03-02 2004-10-07 アンバーウェーブ システムズ コーポレイション 高速ｃｍｏｓ電子機器及び高速アナログ回路のための緩和シリコンゲルマニウムプラットフォーム
JP3933405B2 (ja) * 2001-03-06 2007-06-20 シャープ株式会社 半導体基板、半導体装置及びそれらの製造方法
JP3875040B2 (ja) * 2001-05-17 2007-01-31 シャープ株式会社 半導体基板及びその製造方法ならびに半導体装置及びその製造方法
US6593625B2 (en) * 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US20030077882A1 (en) * 2001-07-26 2003-04-24 Taiwan Semiconductor Manfacturing Company Method of forming strained-silicon wafer for mobility-enhanced MOSFET device
US6515335B1 (en) * 2002-01-04 2003-02-04 International Business Machines Corporation Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
US6746902B2 (en) * 2002-01-31 2004-06-08 Sharp Laboratories Of America, Inc. Method to form relaxed sige layer with high ge content
DE10218381A1 (de) 2002-04-24 2004-02-26 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer oder mehrerer einkristalliner Schichten mit jeweils unterschiedlicher Gitterstruktur in einer Ebene einer Schichtenfolge
US6972245B2 (en) 2002-05-15 2005-12-06 The Regents Of The University Of California Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures
US6689671B1 (en) * 2002-05-22 2004-02-10 Advanced Micro Devices, Inc. Low temperature solid-phase epitaxy fabrication process for MOS devices built on strained semiconductor substrate
US6774015B1 (en) * 2002-12-19 2004-08-10 International Business Machines Corporation Strained silicon-on-insulator (SSOI) and method to form the same
DE10310740A1 (de) 2003-03-10 2004-09-30 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer spannungsrelaxierten Schichtstruktur auf einem nicht gitterangepassten Substrat, sowie Verwendung eines solchen Schichtsystems in elektronischen und/oder optoelektronischen Bauelementen
US6767802B1 (en) * 2003-09-19 2004-07-27 Sharp Laboratories Of America, Inc. Methods of making relaxed silicon-germanium on insulator via layer transfer

Also Published As

Publication number Publication date
WO2004095552A3 (de) 2004-12-02
WO2004095552A2 (de) 2004-11-04
US20060220127A1 (en) 2006-10-05
EP1616345A2 (de) 2006-01-18
US7615471B2 (en) 2009-11-10
US7915148B2 (en) 2011-03-29
DE10318283A1 (de) 2004-11-25
US20090298301A1 (en) 2009-12-03
JP2006524426A (ja) 2006-10-26

Similar Documents

Publication Publication Date Title
JP5259954B2 (ja) 基板上に歪層を製造する方法と層構造
JP2006524426A5 (enExample)
US7390725B2 (en) Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
JP4716733B2 (ja) 歪みシリコン・オン・インシュレータ（ｓｓｏｉ）を形成する方法
KR100521708B1 (ko) 반도체 기판을 제조하는 방법
US6573126B2 (en) Process for producing semiconductor article using graded epitaxial growth
JP3970011B2 (ja) 半導体装置及びその製造方法
JP5065676B2 (ja) 基板上に歪層を製造する方法及び層構造
US6723541B2 (en) Method of producing semiconductor device and semiconductor substrate
US7348259B2 (en) Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers
US7442657B2 (en) Producing stress-relaxed crystalline layer on a substrate
US7825470B2 (en) Transistor and in-situ fabrication process
US7897480B2 (en) Preparation of high quality strained-semiconductor directly-on-insulator substrates
JP2004014856A (ja) 半導体基板の製造方法及び半導体装置の製造方法
JP2008505482A (ja) シリコン・ゲルマニウム・バッファで絶縁体上に歪みＳｉ／ＳｉＧｅを形成する方法
Mazuré et al. Advanced SOI Substrate Manufacturing
CN101142669B (zh) SiGe结构的形成和处理
JP4853990B2 (ja) 絶縁体上に歪み結晶層を製造する方法、前記方法による半導体構造及び製造された半導体構造
Zhao et al. Process optimization of the Si0. 7Ge0. 3 Fin Formation for the STI first scheme
JP2008515209A (ja) 基体の上に歪み層を製造する方法、及び層構造
JP2004356644A (ja) 半導体基板の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070216

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110308

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110525

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110601

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110707

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110714

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110805

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110812

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110906

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120327

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120626

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120703

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120725

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120801

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20120820

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120821

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130301

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130416

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130425

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160502

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S801 Written request for registration of abandonment of right

Free format text: JAPANESE INTERMEDIATE CODE: R311801

ABAN Cancellation due to abandonment
R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350