JP5259626B2 - スパッタ装置、スパッタ成膜方法 - Google Patents

スパッタ装置、スパッタ成膜方法 Download PDF

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Publication number
JP5259626B2
JP5259626B2 JP2009547117A JP2009547117A JP5259626B2 JP 5259626 B2 JP5259626 B2 JP 5259626B2 JP 2009547117 A JP2009547117 A JP 2009547117A JP 2009547117 A JP2009547117 A JP 2009547117A JP 5259626 B2 JP5259626 B2 JP 5259626B2
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Japan
Prior art keywords
stage
substrate
rotation
rotation axis
gear
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Active
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JP2009547117A
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English (en)
Japanese (ja)
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JPWO2009081953A1 (ja
Inventor
フランク エルヌ
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Canon Anelva Corp
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Canon Anelva Corp
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Priority to JP2009547117A priority Critical patent/JP5259626B2/ja
Publication of JPWO2009081953A1 publication Critical patent/JPWO2009081953A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
JP2009547117A 2007-12-26 2008-12-24 スパッタ装置、スパッタ成膜方法 Active JP5259626B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009547117A JP5259626B2 (ja) 2007-12-26 2008-12-24 スパッタ装置、スパッタ成膜方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007334236 2007-12-26
JP2007334236 2007-12-26
PCT/JP2008/073478 WO2009081953A1 (ja) 2007-12-26 2008-12-24 スパッタ装置、スパッタ成膜方法及び分析装置
JP2009547117A JP5259626B2 (ja) 2007-12-26 2008-12-24 スパッタ装置、スパッタ成膜方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013091769A Division JP5695119B2 (ja) 2007-12-26 2013-04-24 スパッタ装置

Publications (2)

Publication Number Publication Date
JPWO2009081953A1 JPWO2009081953A1 (ja) 2011-05-06
JP5259626B2 true JP5259626B2 (ja) 2013-08-07

Family

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JP2009547117A Active JP5259626B2 (ja) 2007-12-26 2008-12-24 スパッタ装置、スパッタ成膜方法
JP2013091769A Active JP5695119B2 (ja) 2007-12-26 2013-04-24 スパッタ装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013091769A Active JP5695119B2 (ja) 2007-12-26 2013-04-24 スパッタ装置

Country Status (3)

Country Link
US (1) US8877019B2 (https=)
JP (2) JP5259626B2 (https=)
WO (1) WO2009081953A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013174020A (ja) * 2007-12-26 2013-09-05 Canon Anelva Corp スパッタ装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102083955B1 (ko) 2010-06-25 2020-03-03 캐논 아네르바 가부시키가이샤 스퍼터링 장치, 박막증착 방법 및 컨트롤 디바이스
JP6042196B2 (ja) * 2011-12-22 2016-12-14 キヤノンアネルバ株式会社 スパッタ装置、スパッタ装置の制御装置、および成膜方法
KR102399075B1 (ko) * 2014-12-16 2022-05-18 주성엔지니어링(주) 공정챔버 내부에 배치되는 기판 가공장치
JP6763321B2 (ja) 2017-03-01 2020-09-30 東京エレクトロン株式会社 自転検出用冶具、基板処理装置及び基板処理装置の運転方法
CN109151113B (zh) * 2018-08-28 2020-10-09 安徽徽昂光电科技有限公司 一种手机玻璃盖板的制作工艺
JP7257941B2 (ja) * 2019-11-28 2023-04-14 東京エレクトロン株式会社 自転駆動機構及び自転駆動方法、並びにこれらを用いた基板処理装置及び基板処理方法
CN115354276B (zh) * 2022-07-18 2024-04-26 中国电子科技集团公司第四十八研究所 一种用于刻蚀及溅射的工件台

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365069A (ja) * 1986-09-08 1988-03-23 Hitachi Ltd スパツタ装置
JPH02272350A (ja) * 1989-04-14 1990-11-07 Shimadzu Corp 表面分析装置
JPH03266239A (ja) * 1990-03-14 1991-11-27 Fujitsu Ltd 光磁気ディスクのスパッタリング方法
JPH08296042A (ja) * 1995-04-17 1996-11-12 Read Rite Corp 複数イオンビームによる絶縁薄膜の形成方法
JP2002243672A (ja) * 2001-02-14 2002-08-28 Jeol Ltd Ｘ線分析装置
JP2005500644A (ja) * 2001-08-20 2005-01-06 ハネウェル・インターナショナル・インコーポレーテッド 磁気フィルムを堆積させる方法および装置

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JPH03232964A (ja) * 1990-02-07 1991-10-16 Fujitsu Ltd スパッタリング装置
JPH06213841A (ja) 1993-01-13 1994-08-05 Shimadzu Corp 示差熱分析装置
JP3378043B2 (ja) 1993-03-05 2003-02-17 同和鉱業株式会社 スパッタリング装置
JPH06325717A (ja) 1993-05-18 1994-11-25 Shimadzu Corp 電子線分析装置
JP3280531B2 (ja) 1995-02-14 2002-05-13 三菱電機株式会社 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
US7294242B1 (en) * 1998-08-24 2007-11-13 Applied Materials, Inc. Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
JP4223614B2 (ja) 1999-01-12 2009-02-12 キヤノンアネルバ株式会社 スパッタリング方法及び装置及び電子部品の製造方法
JP4205294B2 (ja) * 2000-08-01 2009-01-07 キヤノンアネルバ株式会社 基板処理装置及び方法
US6985956B2 (en) * 2000-11-02 2006-01-10 Sun Microsystems, Inc. Switching system
US7162600B2 (en) * 2005-03-29 2007-01-09 Hitachi, Ltd. Data copying method and apparatus in a thin provisioned system
EP1419285A4 (en) * 2001-08-24 2009-08-19 Nanonexus Inc METHOD AND DEVICE FOR GENERATING UNIFORM ISOTROPIC VOLTAGES IN A SPOTTED FILM
US7013379B1 (en) * 2001-12-10 2006-03-14 Incipient, Inc. I/O primitives
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US6959373B2 (en) * 2001-12-10 2005-10-25 Incipient, Inc. Dynamic and variable length extents
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US20030126132A1 (en) * 2001-12-27 2003-07-03 Kavuri Ravi K. Virtual volume management system and method
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US7379990B2 (en) * 2002-08-12 2008-05-27 Tsao Sheng Ted Tai Distributed virtual SAN
US20050138184A1 (en) * 2003-12-19 2005-06-23 Sanrad Ltd. Efficient method for sharing data between independent clusters of virtualization switches
US7818515B1 (en) * 2004-08-10 2010-10-19 Symantec Operating Corporation System and method for enforcing device grouping rules for storage virtualization
US7409495B1 (en) * 2004-12-22 2008-08-05 Symantec Operating Corporation Method and apparatus for providing a temporal storage appliance with block virtualization in storage networks
US7130960B1 (en) * 2005-04-21 2006-10-31 Hitachi, Ltd. System and method for managing disk space in a thin-provisioned storage subsystem
JP5057656B2 (ja) * 2005-05-24 2012-10-24 株式会社日立製作所 ストレージシステム及びストレージシステムの運用方法
JP2007308758A (ja) 2006-05-18 2007-11-29 Denso Corp 成膜装置及び成膜方法
WO2009081953A1 (ja) * 2007-12-26 2009-07-02 Canon Anelva Corporation スパッタ装置、スパッタ成膜方法及び分析装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365069A (ja) * 1986-09-08 1988-03-23 Hitachi Ltd スパツタ装置
JPH02272350A (ja) * 1989-04-14 1990-11-07 Shimadzu Corp 表面分析装置
JPH03266239A (ja) * 1990-03-14 1991-11-27 Fujitsu Ltd 光磁気ディスクのスパッタリング方法
JPH08296042A (ja) * 1995-04-17 1996-11-12 Read Rite Corp 複数イオンビームによる絶縁薄膜の形成方法
JP2002243672A (ja) * 2001-02-14 2002-08-28 Jeol Ltd Ｘ線分析装置
JP2005500644A (ja) * 2001-08-20 2005-01-06 ハネウェル・インターナショナル・インコーポレーテッド 磁気フィルムを堆積させる方法および装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013174020A (ja) * 2007-12-26 2013-09-05 Canon Anelva Corp スパッタ装置

Also Published As

Publication number Publication date
US8877019B2 (en) 2014-11-04
JPWO2009081953A1 (ja) 2011-05-06
WO2009081953A1 (ja) 2009-07-02
JP5695119B2 (ja) 2015-04-01
US20100258432A1 (en) 2010-10-14
JP2013174020A (ja) 2013-09-05

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