JP5695119B2 - スパッタ装置 - Google Patents
スパッタ装置 Download PDFInfo
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- JP5695119B2 JP5695119B2 JP2013091769A JP2013091769A JP5695119B2 JP 5695119 B2 JP5695119 B2 JP 5695119B2 JP 2013091769 A JP2013091769 A JP 2013091769A JP 2013091769 A JP2013091769 A JP 2013091769A JP 5695119 B2 JP5695119 B2 JP 5695119B2
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- 238000004544 sputter deposition Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims description 178
- 230000033001 locomotion Effects 0.000 claims description 53
- 238000001514 detection method Methods 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 description 37
- 238000012545 processing Methods 0.000 description 26
- 239000010409 thin film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 18
- 238000005259 measurement Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Description
基板を載置可能であり、かつ第1回転軸回りに回転可能な第1ステージと、前記第1ステージの前記第1回転軸とずらして設けられた第2回転軸回りに回転可能な第2ステージと、前記第1ステージを前記第1回転軸回りに回転させる自転運動手段と、前記第2ステージを前記第2回転軸回りに回転させることにより、前記第1ステージを前記第2回転軸回りに公転させる公転運動手段と、を有する基板ホルダと、
前記基板に対して、特定の方向の磁界を供給するための、前記第2ステージの周りに設置された磁界供給手段と、
前記基板に成膜するためのターゲットを載置するターゲット載置台と、を備えたスパッタ装置であって、
前記自転運動手段は、前記公転運動手段の回転に対して逆方向に前記第1ステージを回転させ、
前記第1ステージの回転速度は前記公転運動手段の回転速度と等しく、
前記磁界供給手段から前記基板に対して供給される磁界の前記特定の方向が維持されることを特徴とする。
図1は、本発明の第1の実施形態にかかるスパッタ装置が有する第1ステージ1と第2ステージ2との構成を示す模式的平面図である。
次に、図3を使用して、本発明の第2の実施形態のスパッタ装置にかかる自転運動手段と公転運動手段とを説明する。
次に、図4〜図6を使用して、第3の実施形態のスパッタ装置にかかる自転運動手段と公転運動手段とを説明する。本実施形態は、例えば、ハードディスクの書き込みヘッドに含まれる軟磁化層に要求される高い磁気異方性を形成するのに好適である。
次に、本発明の第4の実施形態として、基板ホルダを使用した基板処理チャンバについて、図7を使用して説明する。
次に、本発明の第5の実施形態として、基板ホルダを使用した分析チャンバについて、図8を使用して説明する。図8は、基板ホルダ800を使用した分析チャンバの構成を示す模式的側断面図である。
次に、第6実施形態として、本発明の基板処理チャンバと分析チャンバを搭載した基板処理装置について、図13を使用して説明する。
Claims (9)
- 基板を載置可能であり、かつ第1回転軸回りに回転可能な第1ステージと、前記第1ステージの前記第1回転軸とずらして設けられた第2回転軸回りに回転可能な第2ステージと、前記第1ステージを前記第1回転軸回りに回転させる自転運動手段と、前記第2ステージを前記第2回転軸回りに回転させることにより、前記第1ステージを前記第2回転軸回りに公転させる公転運動手段と、を有する基板ホルダと、
前記基板に対して、特定の方向の磁界を供給するための、前記第2ステージの周りに設置された磁界供給手段と、
前記基板に成膜するためのターゲットを載置するターゲット載置台と、を備えたスパッタ装置であって、
前記自転運動手段は、前記公転運動手段の回転に対して逆方向に前記第1ステージを回転させ、
前記第1ステージの回転速度は前記公転運動手段の回転速度と等しく、
前記磁界供給手段から前記基板に対して供給される磁界の前記特定の方向が維持されることを特徴とするスパッタ装置。 - 前記自転運動手段の回転角度の情報を検出するための第1検出機構と、
前記公転運動手段の回転角度の情報を検出するための第2検出機構と、
前記第1検出機構および前記第2検出機構のそれぞれによって検出された前記回転角度の情報に基づいて、前記自転運動手段の回転運動及び前記公転運動手段の回転運動を制御する制御手段と、
を更に備えることを特徴とする請求項1に記載のスパッタ装置。 - 前記自転運動手段は、
第1端部が固定されている固定軸と、
前記固定軸の第2端部に設けられている第1ギアと、
前記第1回転軸に設けられ、前記第1ギアと接続された第2ギアと、を備え、
前記第1ギアと前記第2ギアとの歯数比は、1:1であることを特徴とする請求項1に記載のスパッタ装置。 - 前記ターゲット載置台は、前記基板に対して、ターゲット粒子が斜めに入射するように配置されていることを特徴とする請求項1に記載のスパッタ装置。
- 前記第2ステージは、当該第2ステージの面内に、前記第1ステージを嵌め込むための窪みが設けられていることを特徴とする請求項1に記載のスパッタ装置。
- 前記公転運動手段は、
駆動伝達軸と、
前記駆動伝達軸と噛み合い、前記駆動伝達軸の回転運動を前記第2ステージに伝達するための第3ギアを外周部に有する部材と、
を備えることを特徴とする請求項3に記載のスパッタ装置。 - 前記部材は、ベアリングを介して、前記固定軸の回りを回転可能に支持されていることを特徴とする請求項6に記載のスパッタ装置。
- 前記磁界供給手段は、電磁石であることを特徴とする請求項1乃至7のいずれか1項に記載のスパッタ装置。
- 前記磁界供給手段は、前記第2ステージの全面にわたって磁界を供給するものであることを特徴とする請求項1乃至8のいずれか1項に記載のスパッタ装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013091769A JP5695119B2 (ja) | 2007-12-26 | 2013-04-24 | スパッタ装置 |
Applications Claiming Priority (3)
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---|---|---|---|
JP2007334236 | 2007-12-26 | ||
JP2007334236 | 2007-12-26 | ||
JP2013091769A JP5695119B2 (ja) | 2007-12-26 | 2013-04-24 | スパッタ装置 |
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JP2009547117A Division JP5259626B2 (ja) | 2007-12-26 | 2008-12-24 | スパッタ装置、スパッタ成膜方法 |
Publications (3)
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JP2013174020A JP2013174020A (ja) | 2013-09-05 |
JP2013174020A5 JP2013174020A5 (ja) | 2014-05-08 |
JP5695119B2 true JP5695119B2 (ja) | 2015-04-01 |
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JP2009547117A Active JP5259626B2 (ja) | 2007-12-26 | 2008-12-24 | スパッタ装置、スパッタ成膜方法 |
JP2013091769A Active JP5695119B2 (ja) | 2007-12-26 | 2013-04-24 | スパッタ装置 |
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JP2009547117A Active JP5259626B2 (ja) | 2007-12-26 | 2008-12-24 | スパッタ装置、スパッタ成膜方法 |
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US (1) | US8877019B2 (ja) |
JP (2) | JP5259626B2 (ja) |
WO (1) | WO2009081953A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5259626B2 (ja) * | 2007-12-26 | 2013-08-07 | キヤノンアネルバ株式会社 | スパッタ装置、スパッタ成膜方法 |
KR20150048901A (ko) | 2010-06-25 | 2015-05-07 | 캐논 아네르바 가부시키가이샤 | 스퍼터링 장치, 박막증착 방법 및 컨트롤 디바이스 |
JP6042196B2 (ja) * | 2011-12-22 | 2016-12-14 | キヤノンアネルバ株式会社 | スパッタ装置、スパッタ装置の制御装置、および成膜方法 |
KR102399075B1 (ko) * | 2014-12-16 | 2022-05-18 | 주성엔지니어링(주) | 공정챔버 내부에 배치되는 기판 가공장치 |
JP6763321B2 (ja) | 2017-03-01 | 2020-09-30 | 東京エレクトロン株式会社 | 自転検出用冶具、基板処理装置及び基板処理装置の運転方法 |
CN109151113B (zh) * | 2018-08-28 | 2020-10-09 | 安徽徽昂光电科技有限公司 | 一种手机玻璃盖板的制作工艺 |
JP7257941B2 (ja) * | 2019-11-28 | 2023-04-14 | 東京エレクトロン株式会社 | 自転駆動機構及び自転駆動方法、並びにこれらを用いた基板処理装置及び基板処理方法 |
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