JP5250738B2 - 表示装置、その製造方法、及びその製造方法で使用されるマスク - Google Patents

表示装置、その製造方法、及びその製造方法で使用されるマスク Download PDF

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Publication number
JP5250738B2
JP5250738B2 JP2006154103A JP2006154103A JP5250738B2 JP 5250738 B2 JP5250738 B2 JP 5250738B2 JP 2006154103 A JP2006154103 A JP 2006154103A JP 2006154103 A JP2006154103 A JP 2006154103A JP 5250738 B2 JP5250738 B2 JP 5250738B2
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Japan
Prior art keywords
manufacturing
dielectric film
electrode
film
storage electrode
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Active
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JP2006154103A
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English (en)
Japanese (ja)
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JP2006350327A5 (enExample
JP2006350327A (ja
Inventor
鍾 哲 蔡
時 烈 金
湘 甲 金
俊 亨 昔
尚 佑 皇甫
元 基 張
羲 國 李
洙 眞 金
銖 浣 尹
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Samsung Display Co Ltd
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Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050047861A external-priority patent/KR101137735B1/ko
Priority claimed from KR1020050051910A external-priority patent/KR20060131454A/ko
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of JP2006350327A publication Critical patent/JP2006350327A/ja
Publication of JP2006350327A5 publication Critical patent/JP2006350327A5/ja
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13458Terminal pads
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136231Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2006154103A 2005-06-03 2006-06-02 表示装置、その製造方法、及びその製造方法で使用されるマスク Active JP5250738B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020050047861A KR101137735B1 (ko) 2005-06-03 2005-06-03 표시장치, 표시장치의 제조 방법 및 마스크
KR10-2005-0047861 2005-06-03
KR1020050051910A KR20060131454A (ko) 2005-06-16 2005-06-16 표시장치의 제조 방법 및 표시장치의 박막을 패터닝하기위한 마스크
KR10-2005-0051910 2005-06-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012108418A Division JP5501402B2 (ja) 2005-06-03 2012-05-10 表示装置及びマスク

Publications (3)

Publication Number Publication Date
JP2006350327A JP2006350327A (ja) 2006-12-28
JP2006350327A5 JP2006350327A5 (enExample) 2009-07-16
JP5250738B2 true JP5250738B2 (ja) 2013-07-31

Family

ID=36940471

Family Applications (2)

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JP2006154103A Active JP5250738B2 (ja) 2005-06-03 2006-06-02 表示装置、その製造方法、及びその製造方法で使用されるマスク
JP2012108418A Active JP5501402B2 (ja) 2005-06-03 2012-05-10 表示装置及びマスク

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012108418A Active JP5501402B2 (ja) 2005-06-03 2012-05-10 表示装置及びマスク

Country Status (4)

Country Link
US (2) US8040444B2 (enExample)
EP (1) EP1729169B1 (enExample)
JP (2) JP5250738B2 (enExample)
TW (1) TWI420246B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090078527A (ko) * 2008-01-15 2009-07-20 삼성전자주식회사 표시 기판
JP2010199518A (ja) * 2009-02-27 2010-09-09 Oki Semiconductor Co Ltd 半導体装置の製造方法
TWI413831B (zh) * 2009-03-09 2013-11-01 Pixel Qi Corp 平常黑半穿透液晶顯示器
US8314907B2 (en) * 2009-07-28 2012-11-20 Pixel Qi Corporation Transflective display sub-pixel structures with transmissive area having different sizes and reflective area having equal sizes
US8698716B2 (en) 2010-05-18 2014-04-15 Pixel Qi Corporation Low power consumption transflective liquid crystal displays
US8830426B2 (en) 2010-11-17 2014-09-09 Pixel Qi Corporation Color shift reduction in transflective liquid crystal displays
CN102645839B (zh) * 2011-06-15 2013-11-27 北京京东方光电科技有限公司 一种掩模板及其制造方法
JP6173049B2 (ja) * 2013-06-04 2017-08-02 三菱電機株式会社 表示パネル及びその製造方法、並びに、液晶表示パネル
EP2863291A1 (en) * 2013-10-18 2015-04-22 Applied Materials, Inc. Transparent body for a touch panel manufacturing method and system for manufacturing a transparent body for a touch screen panel
WO2016150730A1 (en) * 2015-03-20 2016-09-29 Koninklijke Philips N.V. High-intensity discharge lamp
CN105068373B (zh) * 2015-09-11 2019-05-31 武汉华星光电技术有限公司 Tft基板结构的制作方法
US10459331B2 (en) * 2017-03-13 2019-10-29 Wuhan China Star Optoelectronics Technology Co., Ltd. Mask structure and COA type array substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590753B1 (ko) 1999-02-27 2006-06-15 삼성전자주식회사 액정표시장치용박막트랜지스터기판및그제조방법
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same
JP3844913B2 (ja) * 1999-06-28 2006-11-15 アルプス電気株式会社 アクティブマトリックス型液晶表示装置
JP4403329B2 (ja) * 1999-08-30 2010-01-27 ソニー株式会社 液晶表示装置の製造方法
JP2001324725A (ja) * 2000-05-12 2001-11-22 Hitachi Ltd 液晶表示装置およびその製造方法
KR100848099B1 (ko) * 2002-05-27 2008-07-24 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판
JP2002214641A (ja) * 2001-01-15 2002-07-31 Toshiba Corp 平面表示装置用アレイ基板の製造方法
JP4651826B2 (ja) * 2001-01-31 2011-03-16 Nec液晶テクノロジー株式会社 反射型表示装置及びその製造方法
KR100729767B1 (ko) 2001-01-31 2007-06-20 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
JP2003152086A (ja) 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
KR100443831B1 (ko) * 2001-12-20 2004-08-09 엘지.필립스 엘시디 주식회사 액정표시소자의 제조 방법
KR100475111B1 (ko) * 2001-12-28 2005-03-10 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
JP3857142B2 (ja) 2002-01-11 2006-12-13 シャープ株式会社 液晶用マトリクス基板の製造方法
JP2003215635A (ja) * 2002-01-21 2003-07-30 Matsushita Electric Ind Co Ltd 液晶表示装置およびその製造方法
KR20030074991A (ko) 2002-03-15 2003-09-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
US7042149B2 (en) * 2002-06-13 2006-05-09 Tfpd Corporation Circuit array substrate for display device
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
KR100498543B1 (ko) * 2002-11-07 2005-07-01 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR100929675B1 (ko) * 2003-03-24 2009-12-03 삼성전자주식회사 다중 도메인 액정 표시 장치 및 그 박막 트랜지스터 기판
JP4417072B2 (ja) * 2003-03-28 2010-02-17 シャープ株式会社 液晶表示装置用基板及びそれを用いた液晶表示装置
KR100698047B1 (ko) * 2003-04-19 2007-03-23 엘지.필립스 엘시디 주식회사 횡전계형 액정 표시 장치 및 그 제조 방법

Also Published As

Publication number Publication date
EP1729169A1 (en) 2006-12-06
US8284338B2 (en) 2012-10-09
EP1729169B1 (en) 2017-08-16
JP5501402B2 (ja) 2014-05-21
US8040444B2 (en) 2011-10-18
JP2012194564A (ja) 2012-10-11
TW200705115A (en) 2007-02-01
JP2006350327A (ja) 2006-12-28
US20120009842A1 (en) 2012-01-12
TWI420246B (zh) 2013-12-21
US20060274236A1 (en) 2006-12-07

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