JP5238251B2 - シリコンウエハ中の金属汚染低減のための方法 - Google Patents

シリコンウエハ中の金属汚染低減のための方法 Download PDF

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Publication number
JP5238251B2
JP5238251B2 JP2007511422A JP2007511422A JP5238251B2 JP 5238251 B2 JP5238251 B2 JP 5238251B2 JP 2007511422 A JP2007511422 A JP 2007511422A JP 2007511422 A JP2007511422 A JP 2007511422A JP 5238251 B2 JP5238251 B2 JP 5238251B2
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wafer
silicon wafer
temperature
silicon
copper
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Japanese (ja)
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JP2007536738A (ja
JP2007536738A5 (enExample
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ラリー・ダブリュー・シーブ
ブライアン・エル・ギルモア
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SunEdison Inc
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MEMC Electronic Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2007511422A 2004-05-07 2005-04-26 シリコンウエハ中の金属汚染低減のための方法 Expired - Fee Related JP5238251B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/840,854 2004-05-07
US10/840,854 US7084048B2 (en) 2004-05-07 2004-05-07 Process for metallic contamination reduction in silicon wafers
PCT/US2005/014529 WO2005114716A2 (en) 2004-05-07 2005-04-26 Process for metallic contamination reduction in silicon wafers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012250402A Division JP2013058784A (ja) 2004-05-07 2012-11-14 シリコンウエハ中の金属汚染低減のための方法

Publications (3)

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JP2007536738A JP2007536738A (ja) 2007-12-13
JP2007536738A5 JP2007536738A5 (enExample) 2008-06-19
JP5238251B2 true JP5238251B2 (ja) 2013-07-17

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JP2007511422A Expired - Fee Related JP5238251B2 (ja) 2004-05-07 2005-04-26 シリコンウエハ中の金属汚染低減のための方法
JP2012250402A Ceased JP2013058784A (ja) 2004-05-07 2012-11-14 シリコンウエハ中の金属汚染低減のための方法

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US (1) US7084048B2 (enExample)
EP (2) EP1743364B1 (enExample)
JP (2) JP5238251B2 (enExample)
KR (1) KR20120040756A (enExample)
CN (1) CN100466200C (enExample)
TW (1) TWI393168B (enExample)
WO (1) WO2005114716A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3502448B2 (ja) 1994-08-17 2004-03-02 東亜グラウト工業株式会社 既設管渠の更生工法及び更生管渠
JP3502447B2 (ja) 1994-08-12 2004-03-02 東亜グラウト工業株式会社 既設管渠の更生工法及び更生管渠

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JP2005333090A (ja) * 2004-05-21 2005-12-02 Sumco Corp Ｐ型シリコンウェーハおよびその熱処理方法
JP2006040972A (ja) * 2004-07-22 2006-02-09 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハおよびその製造方法
JP2007194232A (ja) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法
US20070295357A1 (en) * 2006-06-27 2007-12-27 Lovejoy Michael L Removing metal using an oxidizing chemistry
US7968148B2 (en) * 2006-09-15 2011-06-28 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with clean surfaces
JP5350623B2 (ja) * 2006-12-28 2013-11-27 グローバルウェーハズ・ジャパン株式会社 シリコンウエハの熱処理方法
US20080171449A1 (en) * 2007-01-15 2008-07-17 Chao-Ching Hsieh Method for cleaning salicide
US7888142B2 (en) * 2007-09-28 2011-02-15 International Business Machines Corporation Copper contamination detection method and system for monitoring copper contamination
US7957917B2 (en) * 2007-09-28 2011-06-07 International Business Machines Corporation Copper contamination detection method and system for monitoring copper contamination
US8076175B2 (en) * 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US20090211623A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
JP5276863B2 (ja) * 2008-03-21 2013-08-28 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ
JP2009231429A (ja) * 2008-03-21 2009-10-08 Covalent Materials Corp シリコンウェーハの製造方法
JP5134586B2 (ja) * 2009-05-18 2013-01-30 濱田重工株式会社 シリコンウエーハの再生方法
JP5544859B2 (ja) * 2009-12-15 2014-07-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US20110146717A1 (en) * 2009-12-23 2011-06-23 Memc Electronic Materials, Inc. Systems And Methods For Analysis of Water and Substrates Rinsed in Water
US9276153B2 (en) * 2011-01-26 2016-03-01 Sumco Corporation Solar cell wafer and method of producing the same
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
US8796116B2 (en) * 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
DE102011016366B4 (de) * 2011-04-07 2018-09-06 Nasp Iii/V Gmbh III/V-Si-Template, dessen Verwendung und Verfahren zu dessen Herstellung
GB201105953D0 (en) * 2011-04-07 2011-05-18 Metryx Ltd Measurement apparatus and method
EP2715805B1 (en) * 2011-06-03 2016-04-06 MEMC Singapore Pte. Ltd. Processes for suppressing minority carrier lifetime degradation in silicon wafers
JP6065366B2 (ja) * 2012-01-30 2017-01-25 富士通セミコンダクター株式会社 半導体装置の製造方法
CN102766908B (zh) * 2012-07-25 2016-02-24 苏州阿特斯阳光电力科技有限公司 晶体硅太阳能电池的硼扩散方法
CN104733337B (zh) * 2013-12-23 2017-11-07 有研半导体材料有限公司 一种用于分析硅片体内金属沾污的测试方法
CN103871871A (zh) * 2014-02-21 2014-06-18 上海华力微电子有限公司 一种去除硅片金属杂质的方法
CN105869988B (zh) * 2015-01-20 2019-09-24 无锡华润上华科技有限公司 一种半导体器件的制造方法
CN109872941A (zh) * 2017-12-05 2019-06-11 上海新昇半导体科技有限公司 一种硅片的处理方法
JP6860117B2 (ja) * 2018-03-22 2021-04-14 住友大阪セメント株式会社 複合焼結体、静電チャック部材、静電チャック装置および複合焼結体の製造方法
DE102020107236B4 (de) * 2019-09-30 2023-05-04 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum herstellen eines halbleiter-auf-isolator(soi)-substrats
CN112539982B (zh) * 2020-12-03 2023-11-03 西安奕斯伟材料科技股份有限公司 一种硅片样片的制作方法和硅片样片
CN112683988B (zh) 2020-12-28 2023-06-02 上海新昇半导体科技有限公司 一种晶圆中金属杂质的检测方法
CN113506733A (zh) * 2021-06-22 2021-10-15 华虹半导体(无锡)有限公司 降低硅片金属杂质的方法

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JPS6055629B2 (ja) 1983-03-15 1985-12-05 グンゼ株式会社 筒状衣料物品の裏返し装置
JPS6055629A (ja) 1983-09-07 1985-03-30 Fujitsu Ltd ミラ−ウェハの製造方法
JPS63129633A (ja) 1986-11-20 1988-06-02 Fujitsu Ltd 半導体表面処理方法
JPH01244621A (ja) * 1988-03-25 1989-09-29 Shin Etsu Handotai Co Ltd シリコン単結晶基板の表面清浄化方法
EP0375232B1 (en) * 1988-12-21 1996-03-06 AT&T Corp. Growth-modified thermal oxidation process for thin oxides
DE3939661A1 (de) 1989-11-30 1991-06-13 Wacker Chemitronic Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren
JPH05275436A (ja) * 1992-03-24 1993-10-22 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理方法
JP3095519B2 (ja) * 1992-04-22 2000-10-03 株式会社東芝 半導体装置の製造方法
US5869405A (en) * 1996-01-03 1999-02-09 Micron Technology, Inc. In situ rapid thermal etch and rapid thermal oxidation
US6100167A (en) * 1997-05-29 2000-08-08 Memc Electronic Materials, Inc. Process for the removal of copper from polished boron doped silicon wafers
US6482269B1 (en) * 1997-05-29 2002-11-19 Memc Electronic Materials, Inc. Process for the removal of copper and other metallic impurities from silicon
JP3211747B2 (ja) * 1997-09-30 2001-09-25 日本電気株式会社 半導体装置の製造方法
KR20060093740A (ko) * 1998-01-09 2006-08-25 에이에스엠 아메리카, 인코포레이티드 동일 챔버에서의 산화물층 및 실리콘층의 성장
JP3173655B2 (ja) * 1999-01-18 2001-06-04 日本電気株式会社 半導体装置の製造方法
JP2000294549A (ja) * 1999-02-02 2000-10-20 Nec Corp 半導体装置及びその製造方法
JP3601383B2 (ja) * 1999-11-25 2004-12-15 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
US6599815B1 (en) * 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3502447B2 (ja) 1994-08-12 2004-03-02 東亜グラウト工業株式会社 既設管渠の更生工法及び更生管渠
JP3502448B2 (ja) 1994-08-17 2004-03-02 東亜グラウト工業株式会社 既設管渠の更生工法及び更生管渠

Also Published As

Publication number Publication date
EP1743364B1 (en) 2011-12-28
CN1981369A (zh) 2007-06-13
US20050250297A1 (en) 2005-11-10
EP1743364A2 (en) 2007-01-17
EP2259291A2 (en) 2010-12-08
WO2005114716A2 (en) 2005-12-01
US7084048B2 (en) 2006-08-01
JP2007536738A (ja) 2007-12-13
JP2013058784A (ja) 2013-03-28
EP2259291B1 (en) 2012-03-14
WO2005114716A3 (en) 2006-02-09
EP2259291A3 (en) 2011-02-23
CN100466200C (zh) 2009-03-04
TW200603224A (en) 2006-01-16
TWI393168B (zh) 2013-04-11
KR20120040756A (ko) 2012-04-27

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