JP5237842B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5237842B2
JP5237842B2 JP2009017997A JP2009017997A JP5237842B2 JP 5237842 B2 JP5237842 B2 JP 5237842B2 JP 2009017997 A JP2009017997 A JP 2009017997A JP 2009017997 A JP2009017997 A JP 2009017997A JP 5237842 B2 JP5237842 B2 JP 5237842B2
Authority
JP
Japan
Prior art keywords
voltage
low
terminal
misfet
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009017997A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010178026A (ja
JP2010178026A5 (enExample
Inventor
聡 後藤
智之 三宅
将夫 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009017997A priority Critical patent/JP5237842B2/ja
Priority to US12/695,192 priority patent/US8244199B2/en
Priority to CN201010107742.6A priority patent/CN101794793B/zh
Publication of JP2010178026A publication Critical patent/JP2010178026A/ja
Publication of JP2010178026A5 publication Critical patent/JP2010178026A5/ja
Priority to US13/562,380 priority patent/US8385876B2/en
Application granted granted Critical
Publication of JP5237842B2 publication Critical patent/JP5237842B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H10D84/0133—Manufacturing common source or drain regions between multiple IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Transceivers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electronic Switches (AREA)
JP2009017997A 2009-01-29 2009-01-29 半導体装置 Expired - Fee Related JP5237842B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009017997A JP5237842B2 (ja) 2009-01-29 2009-01-29 半導体装置
US12/695,192 US8244199B2 (en) 2009-01-29 2010-01-28 Semiconductor device
CN201010107742.6A CN101794793B (zh) 2009-01-29 2010-01-29 半导体器件
US13/562,380 US8385876B2 (en) 2009-01-29 2012-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009017997A JP5237842B2 (ja) 2009-01-29 2009-01-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2010178026A JP2010178026A (ja) 2010-08-12
JP2010178026A5 JP2010178026A5 (enExample) 2012-03-08
JP5237842B2 true JP5237842B2 (ja) 2013-07-17

Family

ID=42353704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009017997A Expired - Fee Related JP5237842B2 (ja) 2009-01-29 2009-01-29 半導体装置

Country Status (3)

Country Link
US (2) US8244199B2 (enExample)
JP (1) JP5237842B2 (enExample)
CN (1) CN101794793B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256775B2 (en) 2017-05-25 2019-04-09 Kabushiki Kaisha Toshiba Semiconductor device including an ESD protective element

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
JP5706103B2 (ja) * 2010-05-25 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5648901B2 (ja) * 2010-08-31 2015-01-07 日立金属株式会社 高周波回路、高周波部品及び通信装置
JP5251953B2 (ja) * 2010-09-30 2013-07-31 株式会社村田製作所 スイッチ回路、半導体装置及び携帯無線機
JP5661448B2 (ja) * 2010-12-15 2015-01-28 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
JP5735268B2 (ja) * 2010-12-20 2015-06-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波半導体スイッチ
JP5672098B2 (ja) * 2011-03-18 2015-02-18 富士通株式会社 無線端末装置
KR101215830B1 (ko) * 2011-03-24 2012-12-27 주식회사 실리콘웍스 Ｌｄｍｏｓ 소자를 이용한 스위치 회로
JP5763485B2 (ja) 2011-09-16 2015-08-12 ルネサスエレクトロニクス株式会社 アンテナスイッチ及び通信装置
CN103219365B (zh) * 2012-01-19 2016-06-22 三星电机株式会社 高频半导体开关
CN103219977B (zh) * 2012-01-19 2016-08-24 三星电机株式会社 高频半导体开关
CN103219566B (zh) * 2012-01-19 2016-08-03 三星电机株式会社 高频开关
CN103219974B (zh) * 2012-01-19 2016-05-11 三星电机株式会社 高频开关
CN103219975B (zh) * 2012-01-19 2016-10-19 三星电机株式会社 高频开关
US9035716B2 (en) 2012-01-20 2015-05-19 Samsung Electro-Mechanics Co., Ltd. High frequency switch
US9024838B2 (en) * 2012-08-09 2015-05-05 Qualcomm Incorporated Multi-throw antenna switch with off-state capacitance reduction
JP6024400B2 (ja) 2012-11-07 2016-11-16 ソニー株式会社 半導体装置、半導体装置の製造方法、及びアンテナスイッチモジュール
KR101963272B1 (ko) * 2014-03-05 2019-03-28 삼성전기주식회사 고주파 스위치
US9590611B2 (en) * 2014-04-10 2017-03-07 The United States Of America As Represented By The Secretary Of The Navy Radiation-hardened dual gate semiconductor transistor devices containing various improved structures including MOSFET gate and JFET gate structures and related methods
CN103986450B (zh) * 2014-05-12 2017-04-12 华为技术有限公司 一种开关、天线的调谐器和射频装置
CN104883216B (zh) * 2015-02-17 2019-03-26 络达科技股份有限公司 可降低信号损失的天线切换装置
TWI547091B (zh) * 2015-02-17 2016-08-21 絡達科技股份有限公司 可降低訊號損失的天線切換裝置
KR102123600B1 (ko) 2015-05-29 2020-06-15 삼성전기주식회사 프론트 엔드 회로
JP6271605B2 (ja) 2016-01-12 2018-01-31 株式会社東芝 発振回路
CN105810647B (zh) * 2016-04-22 2018-11-06 宜确半导体（苏州）有限公司 射频开关集成模块及其集成方法、射频前端集成电路
US10680605B2 (en) * 2018-02-28 2020-06-09 Infineon Technologies Ag Bias circuit and method for a high-voltage RF switch
WO2020245728A1 (ja) * 2019-06-07 2020-12-10 株式会社半導体エネルギー研究所 通信装置および電子機器
US11700028B2 (en) * 2020-02-26 2023-07-11 Dsp Group Ltd. Transmit receive radio frequency switch
JP7330146B2 (ja) * 2020-08-07 2023-08-21 株式会社東芝 スイッチ回路
CN113659932B (zh) * 2021-10-21 2021-12-24 成都明夷电子科技有限公司 一种高频高功率的soi射频收发开关
US11658657B1 (en) * 2022-02-08 2023-05-23 Infineon Technologies Ag Antenna tuning switch and system with a bypass function integrated in an RFIC
US12334960B2 (en) 2022-07-25 2025-06-17 Avago Technologies International Sales Pte. Limited Configurable radio frequency (RF) multiplexing switch for RF front end in 4G/5G applications

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243892B2 (ja) * 1993-05-21 2002-01-07 ソニー株式会社 信号切り替え用スイッチ
JP2770846B2 (ja) * 1995-06-16 1998-07-02 日本電気株式会社 Ｆｅｔスイッチ回路
FR2742942B1 (fr) * 1995-12-26 1998-01-16 Sgs Thomson Microelectronics Generateur de creneaux de haute tension
US5777530A (en) * 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
JPH10242829A (ja) * 1997-02-24 1998-09-11 Sanyo Electric Co Ltd スイッチ回路装置
JP3711193B2 (ja) * 1998-01-16 2005-10-26 三菱電機株式会社 送受信切り換え回路
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP2006345398A (ja) * 2005-06-10 2006-12-21 Matsushita Electric Ind Co Ltd 高周波スイッチ回路及び高周波スイッチを用いた半導体装置
JP2008011503A (ja) * 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置
JP2008263523A (ja) * 2007-04-13 2008-10-30 Renesas Technology Corp 高周波スイッチ回路
US8093940B2 (en) * 2010-04-16 2012-01-10 Sige Semiconductor Inc. System and method of transistor switch biasing in a high power semiconductor switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256775B2 (en) 2017-05-25 2019-04-09 Kabushiki Kaisha Toshiba Semiconductor device including an ESD protective element

Also Published As

Publication number Publication date
US20120292703A1 (en) 2012-11-22
US8385876B2 (en) 2013-02-26
US8244199B2 (en) 2012-08-14
JP2010178026A (ja) 2010-08-12
CN101794793A (zh) 2010-08-04
US20100188163A1 (en) 2010-07-29
CN101794793B (zh) 2014-03-19

Similar Documents

Publication Publication Date Title
JP5237842B2 (ja) 半導体装置
CN102299702B (zh) 半导体器件
US8786002B2 (en) Semiconductor device
US10229902B2 (en) Stack device having voltage compensation
US8546980B2 (en) Radio-frequency module and radio communication system
US9852978B2 (en) Metal layout for radio-frequency switches
US8115234B2 (en) Semiconductor device
US7986927B2 (en) Semiconductor integrated circuit device and high-frequency power amplifier module
KR20080001668A (ko) 반도체 집적 회로 장치 및 고주파 모듈
US10594273B2 (en) Power amplifier module
JP5375307B2 (ja) 半導体装置
JP2012080247A (ja) 半導体装置および携帯電話機
KR20250029210A (ko) 조정 가능한 하이브리드 광대역 lna 아키텍처
KR20250030493A (ko) 광대역 커플링된 입력 임피던스 매칭 lna 아키텍처
US10672877B2 (en) Method of boosting RON*COFF performance
US20250286518A1 (en) ESD Protection Circuit
US20250062724A1 (en) Amplifier circuit and communication device
CN103339858A (zh) 半导体集成电路装置以及高频模块
KR20250128996A (ko) 수동 바이패스 이득 모드를 갖는 다중-입력 lna
CN120419103A (zh) 在反馈电路中改善电源抑制的放大器
JP2009081474A (ja) スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20100528

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120124

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130305

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130329

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5237842

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160405

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees