JP5230909B2 - 薄膜トランジスタ表示板の製造方法 - Google Patents
薄膜トランジスタ表示板の製造方法 Download PDFInfo
- Publication number
- JP5230909B2 JP5230909B2 JP2006145641A JP2006145641A JP5230909B2 JP 5230909 B2 JP5230909 B2 JP 5230909B2 JP 2006145641 A JP2006145641 A JP 2006145641A JP 2006145641 A JP2006145641 A JP 2006145641A JP 5230909 B2 JP5230909 B2 JP 5230909B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive oxide
- forming
- thin film
- transistor array
- ito
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 5
- 239000010408 film Substances 0.000 claims description 54
- 229910052709 silver Inorganic materials 0.000 claims description 42
- 239000004332 silver Substances 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 1
- 241000408495 Iton Species 0.000 description 88
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 40
- 238000003860 storage Methods 0.000 description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- -1 aluminum Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
121 ゲート線、
124 ゲート電極、
131 維持電極線、
140 ゲート絶縁膜、
151 半導体、
161 不純物非晶質シリコン層、
171 データ線、
173 ソース電極、
175 ドレイン電極、
180 保護膜、
81,82 コンタクト補助部材、
181,182,184,185 コンタクトホール、
191 画素電極。
Claims (9)
- 基板上に第1信号線を形成する段階と、
前記第1信号線上にゲート絶縁膜及び半導体層を順次に形成する段階と、
前記ゲート絶縁膜及び前記半導体層上に第2信号線を形成する段階と、
前記第2信号線と連結される画素電極を形成する段階と、を含み、
前記第1信号線を形成する段階及び前記第2信号線を形成する段階のうちの少なくとも一つの段階は、
第1導電性酸化膜を150℃以上の温度で多結晶に形成する段階と、
銀を含む導電層を形成する段階と、
第2導電性酸化膜を25〜150℃の温度で非晶質に形成する段階と、を含み、
前記第2導電性酸化膜を形成する段階の後に、前記第1導電性酸化膜、前記銀を含む導電層、及び前記第2導電性酸化膜を連続的にエッチングする段階をさらに含み、
前記第1導電性酸化物、第2導電性酸化物および導電層を含む信号線の側面は、前記基板の面に対して30°〜80°の傾斜角に形成される、薄膜トランジスタ表示板の製造方法。 - 前記第2導電性酸化膜を形成する段階は、常温で行われる、請求項1に記載の薄膜トランジスタ表示板の製造方法。
- 前記エッチングする段階は、ウェットエッチングで行われる、請求項1または2に記載の薄膜トランジスタ表示板の製造方法。
- 前記第2導電性酸化膜を形成する段階は、酸素気体、水素気体、及び水蒸気のうちの少なくとも一つに前記第2導電性酸化膜を露出させる、請求項1〜3のいずれか一項に記載の薄膜トランジスタ表示板の製造方法。
- 前記第2導電性酸化膜を形成する段階は、窒素気体に前記第2導電性酸化膜を露出させる、請求項4に記載の薄膜トランジスタ表示板の製造方法。
- 前記第1導電性酸化膜は、多結晶ITOからなる、請求項1〜5のいずれか一項に記載の薄膜トランジスタ表示板の製造方法。
- 前記第2導電性酸化膜は、非晶質導電性酸化物である非晶質ITOまたは非晶質IZOからなる、請求項1〜6のいずれか一項に記載の薄膜トランジスタ表示板の製造方法。
- 前記第2導電性酸化膜の前記非晶質導電性酸化物を結晶化する段階をさらに含む、請求項7に記載の薄膜トランジスタ表示板の製造方法。
- 前記導電層は、前記第1及び第3導電性酸化物よりも厚く形成される、請求項1〜8のいずれか一項に記載の薄膜トランジスタ表示板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050044802A KR101152127B1 (ko) | 2005-05-27 | 2005-05-27 | 표시 장치용 배선, 이를 포함하는 박막 트랜지스터 표시판및 그 제조 방법 |
KR10-2005-0044802 | 2005-05-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006332674A JP2006332674A (ja) | 2006-12-07 |
JP5230909B2 true JP5230909B2 (ja) | 2013-07-10 |
Family
ID=37443493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006145641A Active JP5230909B2 (ja) | 2005-05-27 | 2006-05-25 | 薄膜トランジスタ表示板の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060269786A1 (ja) |
JP (1) | JP5230909B2 (ja) |
KR (1) | KR101152127B1 (ja) |
CN (1) | CN1869797B (ja) |
TW (1) | TWI406416B (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2381744A1 (fr) * | 2006-09-07 | 2011-10-26 | Saint-Gobain Glass France | Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique |
EP2090139A2 (fr) * | 2006-11-17 | 2009-08-19 | Saint-Gobain Glass France | Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant |
FR2913146B1 (fr) * | 2007-02-23 | 2009-05-01 | Saint Gobain | Electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications |
FR2924274B1 (fr) | 2007-11-22 | 2012-11-30 | Saint Gobain | Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication |
FR2925981B1 (fr) * | 2007-12-27 | 2010-02-19 | Saint Gobain | Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant. |
FR2936358B1 (fr) | 2008-09-24 | 2011-01-21 | Saint Gobain | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique. |
FR2936362B1 (fr) | 2008-09-25 | 2010-09-10 | Saint Gobain | Procede de fabrication d'une grille submillimetrique electroconductrice revetue d'une grille surgrille, grille submillimetrique electroconductrice revetue d'une surgrille |
KR101182403B1 (ko) * | 2008-12-22 | 2012-09-13 | 한국전자통신연구원 | 투명 트랜지스터 및 그의 제조 방법 |
FR2944145B1 (fr) | 2009-04-02 | 2011-08-26 | Saint Gobain | Procede de fabrication d'une structure a surface texturee pour dispositif a diode electroluminescente organique et structure a surface texturee |
FR2955575B1 (fr) | 2010-01-22 | 2012-02-24 | Saint Gobain | Substrat verrier revetu d'une couche haut indice sous un revetement electrode et dispositif electroluminescent organique comportant un tel substrat. |
US20110227467A1 (en) * | 2010-03-18 | 2011-09-22 | Foot Traffic Media Group, LLC | Media island |
KR101692954B1 (ko) | 2010-05-17 | 2017-01-05 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
KR101815256B1 (ko) * | 2011-06-28 | 2018-01-08 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
KR20130007053A (ko) * | 2011-06-28 | 2013-01-18 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
JP5827088B2 (ja) * | 2011-09-27 | 2015-12-02 | セイコーインスツル株式会社 | 電子部品の端子接続構造、パッケージ、圧電振動子、発振器、電子機器および電波時計 |
KR102022396B1 (ko) * | 2013-02-20 | 2019-09-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN105842941B (zh) * | 2015-01-13 | 2019-07-05 | 群创光电股份有限公司 | 显示面板 |
CN106856199B (zh) * | 2015-12-08 | 2020-04-24 | 群创光电股份有限公司 | 显示面板及其制造方法 |
US20170162609A1 (en) * | 2015-12-08 | 2017-06-08 | Innolux Corporation | Display panel and manufacturing method thereof |
CN106910779A (zh) * | 2017-04-06 | 2017-06-30 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制备方法和显示装置 |
KR20190137458A (ko) * | 2018-06-01 | 2019-12-11 | 삼성전자주식회사 | Led를 이용한 디스플레이 모듈 제조방법 |
JP2022115708A (ja) * | 2021-01-28 | 2022-08-09 | 凸版印刷株式会社 | 表示装置及び波長変換基板 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09281473A (ja) * | 1996-04-09 | 1997-10-31 | Matsushita Electric Ind Co Ltd | 電極基板の製造方法および電極基板を用いた表示素子 |
TW449670B (en) * | 1996-05-15 | 2001-08-11 | Seiko Epson Corp | Method for making thin film device with coating film, liquid crystal panel and electronic device |
DE69716906T2 (de) * | 1996-05-29 | 2003-03-20 | Idemitsu Kosan Co | Organische elektrolumineszente vorrichtung |
KR20000041955A (ko) * | 1998-12-24 | 2000-07-15 | 김영환 | 박막 트랜지스터 액정표시소자 |
KR100767354B1 (ko) * | 2000-09-04 | 2007-10-16 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
JP2002038262A (ja) * | 2000-07-24 | 2002-02-06 | Toshiba Corp | 透明導電性膜の形成方法、アレイ基板および液晶表示装置 |
KR100720087B1 (ko) * | 2000-07-31 | 2007-05-18 | 삼성전자주식회사 | 표시 소자용 배선 및 이를 이용한 박막 트랜지스터 기판및 그 제조 방법 |
US6599818B2 (en) * | 2000-10-10 | 2003-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method |
JP2002121435A (ja) * | 2000-10-12 | 2002-04-23 | Fuji Xerox Co Ltd | インクジェット記録用再充填インク及びその再充填方法 |
US20040023244A1 (en) * | 2001-06-21 | 2004-02-05 | Griffin Jennifer A | Receptors |
KR100980008B1 (ko) * | 2002-01-02 | 2010-09-03 | 삼성전자주식회사 | 배선 구조, 이를 이용하는 박막 트랜지스터 기판 및 그제조 방법 |
US6833322B2 (en) * | 2002-10-17 | 2004-12-21 | Applied Materials, Inc. | Apparatuses and methods for depositing an oxide film |
JP4062171B2 (ja) * | 2003-05-28 | 2008-03-19 | ソニー株式会社 | 積層構造の製造方法 |
US7520790B2 (en) * | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
KR101282397B1 (ko) * | 2004-12-07 | 2013-07-04 | 삼성디스플레이 주식회사 | 표시 장치용 배선, 상기 배선을 포함하는 박막 트랜지스터표시판 및 그 제조 방법 |
-
2005
- 2005-05-27 KR KR1020050044802A patent/KR101152127B1/ko active IP Right Grant
-
2006
- 2006-05-18 US US11/437,506 patent/US20060269786A1/en not_active Abandoned
- 2006-05-22 TW TW095118099A patent/TWI406416B/zh active
- 2006-05-25 JP JP2006145641A patent/JP5230909B2/ja active Active
- 2006-05-26 CN CN2006100784334A patent/CN1869797B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060122382A (ko) | 2006-11-30 |
KR101152127B1 (ko) | 2012-06-15 |
CN1869797B (zh) | 2010-09-01 |
CN1869797A (zh) | 2006-11-29 |
TW200703662A (en) | 2007-01-16 |
JP2006332674A (ja) | 2006-12-07 |
US20060269786A1 (en) | 2006-11-30 |
TWI406416B (zh) | 2013-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5230909B2 (ja) | 薄膜トランジスタ表示板の製造方法 | |
JP4977352B2 (ja) | 表示装置用配線、該配線を有する薄膜トランジスタ表示板及びその製造方法 | |
US9111802B2 (en) | Thin film transistor array panel including layered line structure and method for manufacturing the same | |
JP4859469B2 (ja) | エッチング液組成物及び薄膜トランジスタ表示板の製造方法 | |
US7811868B2 (en) | Method for manufacturing a signal line, thin film transistor panel, and method for manufacturing the thin film transistor panel | |
US20060283833A1 (en) | Wiring for display device and thin film transistor array panel with the same, and manufacturing method thereof | |
JP5615605B2 (ja) | Ffsモード液晶装置 | |
JP2004253511A (ja) | 表示装置 | |
US20120015487A1 (en) | Thin film transistor array panel and method for manufacturing the same including forming a temperature dependent gate insulating layer | |
JP5144001B2 (ja) | 多結晶シリコン半導体素子及びその製造方法 | |
JP5475250B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
KR101265331B1 (ko) | 박막 트랜지스터, 그 제조방법, 이를 구비한 액정표시장치제조방법 | |
KR20080000691A (ko) | 박막 트랜지스터, 그 제조방법, 이를 구비한 액정표시장치제조방법 | |
KR20080076127A (ko) | 박막 트랜지스터 표시판의 제조 방법 | |
KR101022569B1 (ko) | 박막트랜지스터 및 그 제조방법 | |
KR101256674B1 (ko) | 박막 트랜지스터, 그 제조방법, 이를 구비한 액정표시장치제조방법 | |
KR20060032396A (ko) | 박막 트랜지스터 표시판 및 그것의 제조 방법 | |
KR20060122234A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
KR20050001264A (ko) | 액정표시장치 및 그 제조방법 | |
KR20080025494A (ko) | 박막 트랜지스터 표시판의 제조 방법 | |
JP2009283522A (ja) | Tftの製造方法及びtft |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090402 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120307 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120321 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120604 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121005 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130214 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130321 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160329 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5230909 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |