JP5223907B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5223907B2
JP5223907B2 JP2010245001A JP2010245001A JP5223907B2 JP 5223907 B2 JP5223907 B2 JP 5223907B2 JP 2010245001 A JP2010245001 A JP 2010245001A JP 2010245001 A JP2010245001 A JP 2010245001A JP 5223907 B2 JP5223907 B2 JP 5223907B2
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Japan
Prior art keywords
gate electrode
film
insulating film
semiconductor device
silicon nitride
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Expired - Fee Related
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JP2010245001A
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Japanese (ja)
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JP2011071529A (ja
JP2011071529A5 (enExample
Inventor
元繁 五十嵐
啓之 網城
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication of JP2011071529A5 publication Critical patent/JP2011071529A5/ja
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2010245001A 2010-11-01 2010-11-01 半導体装置及びその製造方法 Expired - Fee Related JP5223907B2 (ja)

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JP2010245001A JP5223907B2 (ja) 2010-11-01 2010-11-01 半導体装置及びその製造方法

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JP2010245001A JP5223907B2 (ja) 2010-11-01 2010-11-01 半導体装置及びその製造方法

Related Parent Applications (1)

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JP2001108720A Division JP2002305302A (ja) 2001-04-06 2001-04-06 半導体装置及びその製造方法

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JP2011071529A JP2011071529A (ja) 2011-04-07
JP2011071529A5 JP2011071529A5 (enExample) 2011-07-07
JP5223907B2 true JP5223907B2 (ja) 2013-06-26

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153642B2 (en) * 2013-03-05 2015-10-06 Qualcomm Incorporated Metal-oxide-metal (MOM) capacitor with enhanced capacitance
JP2015207639A (ja) 2014-04-18 2015-11-19 ソニー株式会社 高周波スイッチ用半導体装置、高周波スイッチおよび高周波モジュール

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153939A (ja) * 1993-11-29 1995-06-16 Oki Electric Ind Co Ltd 半導体素子およびその製造方法
JP2917783B2 (ja) * 1993-12-24 1999-07-12 日本電気株式会社 半導体装置及びその製造方法
JP4160167B2 (ja) * 1997-06-30 2008-10-01 株式会社東芝 半導体装置の製造方法
JP3600476B2 (ja) * 1999-06-30 2004-12-15 株式会社東芝 半導体装置の製造方法

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