JP2011071529A5 - - Google Patents
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- Publication number
- JP2011071529A5 JP2011071529A5 JP2010245001A JP2010245001A JP2011071529A5 JP 2011071529 A5 JP2011071529 A5 JP 2011071529A5 JP 2010245001 A JP2010245001 A JP 2010245001A JP 2010245001 A JP2010245001 A JP 2010245001A JP 2011071529 A5 JP2011071529 A5 JP 2011071529A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor device
- gate electrode
- manufacturing
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 33
- 238000004519 manufacturing process Methods 0.000 claims 15
- 238000009792 diffusion process Methods 0.000 claims 14
- 239000012535 impurity Substances 0.000 claims 14
- 239000010410 layer Substances 0.000 claims 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 239000011229 interlayer Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 229910021332 silicide Inorganic materials 0.000 claims 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010245001A JP5223907B2 (ja) | 2010-11-01 | 2010-11-01 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010245001A JP5223907B2 (ja) | 2010-11-01 | 2010-11-01 | 半導体装置及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001108720A Division JP2002305302A (ja) | 2001-04-06 | 2001-04-06 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011071529A JP2011071529A (ja) | 2011-04-07 |
| JP2011071529A5 true JP2011071529A5 (enExample) | 2011-07-07 |
| JP5223907B2 JP5223907B2 (ja) | 2013-06-26 |
Family
ID=44016423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010245001A Expired - Fee Related JP5223907B2 (ja) | 2010-11-01 | 2010-11-01 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5223907B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9153642B2 (en) * | 2013-03-05 | 2015-10-06 | Qualcomm Incorporated | Metal-oxide-metal (MOM) capacitor with enhanced capacitance |
| JP2015207639A (ja) | 2014-04-18 | 2015-11-19 | ソニー株式会社 | 高周波スイッチ用半導体装置、高周波スイッチおよび高周波モジュール |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07153939A (ja) * | 1993-11-29 | 1995-06-16 | Oki Electric Ind Co Ltd | 半導体素子およびその製造方法 |
| JP2917783B2 (ja) * | 1993-12-24 | 1999-07-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP4160167B2 (ja) * | 1997-06-30 | 2008-10-01 | 株式会社東芝 | 半導体装置の製造方法 |
| JP3600476B2 (ja) * | 1999-06-30 | 2004-12-15 | 株式会社東芝 | 半導体装置の製造方法 |
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2010
- 2010-11-01 JP JP2010245001A patent/JP5223907B2/ja not_active Expired - Fee Related