JP5220357B2 - 薄膜形成方法 - Google Patents
薄膜形成方法 Download PDFInfo
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- JP5220357B2 JP5220357B2 JP2007190459A JP2007190459A JP5220357B2 JP 5220357 B2 JP5220357 B2 JP 5220357B2 JP 2007190459 A JP2007190459 A JP 2007190459A JP 2007190459 A JP2007190459 A JP 2007190459A JP 5220357 B2 JP5220357 B2 JP 5220357B2
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- Japan
- Prior art keywords
- film
- barrier metal
- metal film
- target
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 34
- 239000010409 thin film Substances 0.000 title claims description 15
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000010408 film Substances 0.000 claims description 104
- 230000004888 barrier function Effects 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 238000010438 heat treatment Methods 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 description 44
- 239000010936 titanium Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 7
- 238000002484 cyclic voltammetry Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
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- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Description
2 スパッタ室
3 ガス導入手段
4 ターゲット
41 Tiターゲット
42 Ruターゲット
5 磁石組立体
Claims (2)
- 被処理物表面にPVD法によりバリアメタル膜を形成する工程と、このバリアメタル膜表面にCVD法によりCu膜を形成する工程と、前記バリアメタル膜及びCu膜を積層したものを300℃以下の温度で熱処理する工程とを含み、
前記バリアメタル膜としてTi及びRuを含むものを用い、当該バリアメタル膜中のTiの組成比を5〜25原子%の範囲とし、
前記Cu膜形成時に水素ガスを含む原料ガスを用いることにより、前記バリアメタル膜表面に形成された酸化物層を還元して除去した状態で前記Cu膜を形成することを特徴とする薄膜形成方法。 - 前記PVD法はスパッタリング法であり、ターゲットとして、所定形状を有するTi製のターゲットのスパッタ面中央領域に、所定形状を有するRu製のターゲットを配置したものを用い、プラズマの形状を調節して前記組成比のバリアメタル膜を得ることを特徴とする請求項1記載の薄膜形成方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007190459A JP5220357B2 (ja) | 2007-07-23 | 2007-07-23 | 薄膜形成方法 |
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JP2007190459A JP5220357B2 (ja) | 2007-07-23 | 2007-07-23 | 薄膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009027061A JP2009027061A (ja) | 2009-02-05 |
JP5220357B2 true JP5220357B2 (ja) | 2013-06-26 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007190459A Expired - Fee Related JP5220357B2 (ja) | 2007-07-23 | 2007-07-23 | 薄膜形成方法 |
Country Status (1)
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JP (1) | JP5220357B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8709151B2 (en) | 2008-04-28 | 2014-04-29 | Carbstone Innovation Nv | Production of a mainly carbonate bonded article by carbonation of alkaline materials |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58199860A (ja) * | 1982-05-17 | 1983-11-21 | Hitachi Ltd | 成膜方法 |
JP4248056B2 (ja) * | 1998-09-24 | 2009-04-02 | キヤノンアネルバ株式会社 | Cvd法による金属銅薄膜作製方法およびcvd装置 |
KR100805843B1 (ko) * | 2001-12-28 | 2008-02-21 | 에이에스엠지니텍코리아 주식회사 | 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템 |
JP2006005190A (ja) * | 2004-06-18 | 2006-01-05 | Renesas Technology Corp | 半導体装置 |
-
2007
- 2007-07-23 JP JP2007190459A patent/JP5220357B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8709151B2 (en) | 2008-04-28 | 2014-04-29 | Carbstone Innovation Nv | Production of a mainly carbonate bonded article by carbonation of alkaline materials |
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JP2009027061A (ja) | 2009-02-05 |
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