JP5220133B2 - レーザー加工装置 - Google Patents
レーザー加工装置 Download PDFInfo
- Publication number
- JP5220133B2 JP5220133B2 JP2010546700A JP2010546700A JP5220133B2 JP 5220133 B2 JP5220133 B2 JP 5220133B2 JP 2010546700 A JP2010546700 A JP 2010546700A JP 2010546700 A JP2010546700 A JP 2010546700A JP 5220133 B2 JP5220133 B2 JP 5220133B2
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- Prior art keywords
- laser beam
- product
- laser
- unit
- hole
- Prior art date
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- 239000006227 byproduct Substances 0.000 claims description 42
- 239000011261 inert gas Substances 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 230000033001 locomotion Effects 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003517 fume Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009955 peripheral mechanism Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1462—Nozzles; Features related to nozzles
- B23K26/1464—Supply to, or discharge from, nozzles of media, e.g. gas, powder, wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
Description
10 レーザービーム光源
20 可変減衰器
30 光学系
40 ステージ
50 吸入ユニット
51 ハウジング
52 ビームスプリッタ
53 ファン
60 モニタリングユニット
70 映像撮影器
80 整列ユニット
90 フォーカシングユニット
Claims (5)
- レーザービームを放出するレーザービーム光源と、
前記レーザービーム光源から放出されたレーザービームの形状及びエネルギー分布を加工する光学系と、
前記光学系により加工されたレーザービームが照射され、前記照射されたレーザービームにより加工される加工対象物が配されるステージと、
前記光学系により加工されたレーザービームが通過するように、前記レーザービームの進行経路上に配され、前記加工対象物の加工時に発生する副産物を吸入するための吸入ユニットと、を備え、
前記吸入ユニットは、
前記レーザービームが通過するように貫設される貫通孔と、前記副産物が流動して貫設される排出孔を有するハウジングと、
前記貫通孔を閉塞するように前記ハウジングに結合されるビームスプリッタと、
前記副産物が排出孔に吸入されるように前記副産物を吸入するファンと、
前記ビームスプリッタで反射されたレーザービームを利用して前記レーザービームをモニタリングするモニタリングユニットと、を備えることを特徴とするレーザー加工装置。 - 前記ハウジングは、前記貫通孔と連通して前記排出孔に向けて外部から供給される不活性ガスを噴射するノズル部をさらに備えることを特徴とする請求項1に記載のレーザー加工装置。
- 前記ハウジングは、前記貫通孔と連通して前記ビームスプリッタに向けて不活性ガスを噴射する噴射部をさらに備えることを特徴とする請求項2に記載のレーザー加工装置。
- 前記副産物の流動経路上に、前記排出孔と前記ファンとの間に配されて前記副産物を濾すフィルタをさらに備えることを特徴とする請求項1ないし3のうちいずれか1項に記載のレーザー加工装置。
- 前記加工対象物と前記レーザービームとを整列させる整列ユニットと、
前記加工対象物に対する前記レーザービームの焦点を整列するフォーカシングユニットと、をさらに備えることを特徴とする請求項1ないし4のうちいずれか1項に記載のレーザー加工装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080014564A KR100953686B1 (ko) | 2008-02-18 | 2008-02-18 | 레이저 가공장치 |
KR10-2008-0014564 | 2008-02-18 | ||
PCT/KR2009/000743 WO2009104886A2 (ko) | 2008-02-18 | 2009-02-17 | 레이저 가공장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011512256A JP2011512256A (ja) | 2011-04-21 |
JP5220133B2 true JP5220133B2 (ja) | 2013-06-26 |
Family
ID=40986034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010546700A Expired - Fee Related JP5220133B2 (ja) | 2008-02-18 | 2009-02-17 | レーザー加工装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5220133B2 (ja) |
KR (1) | KR100953686B1 (ja) |
CN (1) | CN102007568B (ja) |
TW (1) | TWI372671B (ja) |
WO (1) | WO2009104886A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11471974B2 (en) | 2016-08-04 | 2022-10-18 | Jsw Aktina System Co., Ltd. | Laser lift-off apparatus, laser lift-off method, and method for manufacturing organic el display |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012178534A (ja) * | 2011-02-02 | 2012-09-13 | Gigaphoton Inc | 光学システムおよびそれを用いた極端紫外光生成システム |
JP5788716B2 (ja) * | 2011-06-02 | 2015-10-07 | 株式会社ディスコ | 粉塵排出装置 |
WO2014062034A1 (ko) * | 2012-10-18 | 2014-04-24 | 디앤에이 주식회사 | 레이저 리프트 오프 장치 |
JP6004933B2 (ja) * | 2012-12-21 | 2016-10-12 | 株式会社ディスコ | レーザー加工装置 |
JP6008210B2 (ja) * | 2014-04-08 | 2016-10-19 | ウシオ電機株式会社 | レーザリフトオフ装置 |
WO2016027186A1 (en) * | 2014-08-19 | 2016-02-25 | Koninklijke Philips N.V. | Sapphire collector for reducing mechanical damage during die level laser lift-off |
EP3295479B1 (en) | 2015-05-13 | 2018-09-26 | Lumileds Holding B.V. | Sapphire collector for reducing mechanical damage during die level laser lift-off |
KR102092712B1 (ko) | 2017-02-24 | 2020-03-24 | 에이피시스템 주식회사 | 레이저 처리 장치 및 방법 |
ES2636715B2 (es) * | 2017-06-07 | 2018-02-12 | Sitexco Girona, S.L. | Máquina de limpieza de rodillos anilox por láser y procedimiento para autoajuste del punto focal láser al diámetro del rodillo anilox. |
US11534868B2 (en) | 2017-09-12 | 2022-12-27 | Ev Group E. Thallner Gmbh | Device and method for separating a temporarily bonded substrate stack |
KR102379215B1 (ko) * | 2017-10-31 | 2022-03-28 | 삼성디스플레이 주식회사 | 레이저 장치 |
WO2023032037A1 (ja) * | 2021-08-31 | 2023-03-09 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3268052B2 (ja) * | 1993-03-24 | 2002-03-25 | 株式会社東芝 | 水中レーザー加工装置 |
JPH09174262A (ja) * | 1995-12-27 | 1997-07-08 | Hitachi Ltd | レーザマーカ |
JPH1099978A (ja) * | 1996-09-27 | 1998-04-21 | Hitachi Ltd | レーザー加工装置 |
JP2001150176A (ja) * | 1999-11-22 | 2001-06-05 | Matsushita Electronics Industry Corp | レーザマーキング集塵装置 |
KR20050078411A (ko) * | 2004-01-29 | 2005-08-05 | 삼성에스디아이 주식회사 | 레이저 패터닝 시스템에서의 레이저 모니터링 시스템 |
JP4555743B2 (ja) * | 2005-07-21 | 2010-10-06 | 本田技研工業株式会社 | レーザ加工ヘッド |
-
2008
- 2008-02-18 KR KR1020080014564A patent/KR100953686B1/ko active IP Right Grant
-
2009
- 2009-02-17 JP JP2010546700A patent/JP5220133B2/ja not_active Expired - Fee Related
- 2009-02-17 CN CN2009801130955A patent/CN102007568B/zh not_active Expired - Fee Related
- 2009-02-17 WO PCT/KR2009/000743 patent/WO2009104886A2/ko active Application Filing
- 2009-02-18 TW TW098105170A patent/TWI372671B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11471974B2 (en) | 2016-08-04 | 2022-10-18 | Jsw Aktina System Co., Ltd. | Laser lift-off apparatus, laser lift-off method, and method for manufacturing organic el display |
Also Published As
Publication number | Publication date |
---|---|
CN102007568A (zh) | 2011-04-06 |
WO2009104886A2 (ko) | 2009-08-27 |
TWI372671B (en) | 2012-09-21 |
JP2011512256A (ja) | 2011-04-21 |
KR20090089161A (ko) | 2009-08-21 |
TW200940229A (en) | 2009-10-01 |
WO2009104886A3 (ko) | 2009-10-22 |
CN102007568B (zh) | 2013-07-10 |
KR100953686B1 (ko) | 2010-04-19 |
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