WO2009104886A3 - 레이저 가공장치 - Google Patents

레이저 가공장치 Download PDF

Info

Publication number
WO2009104886A3
WO2009104886A3 PCT/KR2009/000743 KR2009000743W WO2009104886A3 WO 2009104886 A3 WO2009104886 A3 WO 2009104886A3 KR 2009000743 W KR2009000743 W KR 2009000743W WO 2009104886 A3 WO2009104886 A3 WO 2009104886A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
laser beam
processing device
processing
processed
Prior art date
Application number
PCT/KR2009/000743
Other languages
English (en)
French (fr)
Other versions
WO2009104886A2 (ko
Inventor
엄승환
김현중
조운기
이광재
Original Assignee
코닉시스템 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닉시스템 주식회사 filed Critical 코닉시스템 주식회사
Priority to CN2009801130955A priority Critical patent/CN102007568B/zh
Priority to JP2010546700A priority patent/JP5220133B2/ja
Publication of WO2009104886A2 publication Critical patent/WO2009104886A2/ko
Publication of WO2009104886A3 publication Critical patent/WO2009104886A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • B23K26/1464—Supply to, or discharge from, nozzles of media, e.g. gas, powder, wire
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)

Abstract

본 발명의 레이저 가공장치에 관한 것으로서, 보다 상세하게는 기판으로부터 박막을 분리하는 레이저 리프트 오프 공정에 사용되는 레이저 가공장치에 관한 것이다. 본 발명에 따른 레이저 가공장치는 레이저 빔을 방출하는 레이저 빔 광원과, 레이저 빔 광원에서 방출된 레이저 빔의 형상 및 에너지분포를 가공하는 광학계와, 광학계에 의해 가공된 레이저 빔이 조사되며, 조사된 레이저 빔에 의해 가공되는 가공대상물이 배치되는 스테이지와, 광학계에 의해 가공된 레이저 빔이 통과하도록 레이저 빔의 진행경로 상에 배치되며, 가공대상물의 가공시 발생되는 부산물을 흡입하기 위한 석션 유닛을 포함한다.
PCT/KR2009/000743 2008-02-18 2009-02-17 레이저 가공장치 WO2009104886A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2009801130955A CN102007568B (zh) 2008-02-18 2009-02-17 激光工艺装置
JP2010546700A JP5220133B2 (ja) 2008-02-18 2009-02-17 レーザー加工装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080014564A KR100953686B1 (ko) 2008-02-18 2008-02-18 레이저 가공장치
KR10-2008-0014564 2008-02-18

Publications (2)

Publication Number Publication Date
WO2009104886A2 WO2009104886A2 (ko) 2009-08-27
WO2009104886A3 true WO2009104886A3 (ko) 2009-10-22

Family

ID=40986034

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000743 WO2009104886A2 (ko) 2008-02-18 2009-02-17 레이저 가공장치

Country Status (5)

Country Link
JP (1) JP5220133B2 (ko)
KR (1) KR100953686B1 (ko)
CN (1) CN102007568B (ko)
TW (1) TWI372671B (ko)
WO (1) WO2009104886A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178534A (ja) * 2011-02-02 2012-09-13 Gigaphoton Inc 光学システムおよびそれを用いた極端紫外光生成システム
JP5788716B2 (ja) * 2011-06-02 2015-10-07 株式会社ディスコ 粉塵排出装置
KR20140052844A (ko) * 2012-10-18 2014-05-07 디앤에이 주식회사 레이저 리프트 오프 장치
JP6004933B2 (ja) * 2012-12-21 2016-10-12 株式会社ディスコ レーザー加工装置
JP6008210B2 (ja) * 2014-04-08 2016-10-19 ウシオ電機株式会社 レーザリフトオフ装置
US11311967B2 (en) 2014-08-19 2022-04-26 Lumileds Llc Sapphire collector for reducing mechanical damage during die level laser lift-off
KR102572643B1 (ko) * 2015-05-13 2023-08-31 루미리즈 홀딩 비.브이. 다이 레벨의 레이저 리프트-오프 중에 기계적 손상을 줄이기 위한 사파이어 수집기
JP6999264B2 (ja) 2016-08-04 2022-01-18 株式会社日本製鋼所 レーザ剥離装置、レーザ剥離方法、及び有機ｅｌディスプレイの製造方法
KR102092712B1 (ko) 2017-02-24 2020-03-24 에이피시스템 주식회사 레이저 처리 장치 및 방법
ES2636715B2 (es) * 2017-06-07 2018-02-12 Sitexco Girona, S.L. Máquina de limpieza de rodillos anilox por láser y procedimiento para autoajuste del punto focal láser al diámetro del rodillo anilox.
JP7130735B2 (ja) * 2017-09-12 2022-09-05 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 仮ボンディングされた基板スタックを分離させるための装置および方法
KR102379215B1 (ko) 2017-10-31 2022-03-28 삼성디스플레이 주식회사 레이저 장치
WO2023032037A1 (ja) * 2021-08-31 2023-03-09 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06269975A (ja) * 1993-03-24 1994-09-27 Toshiba Corp 水中レーザー加工装置
JPH1099978A (ja) * 1996-09-27 1998-04-21 Hitachi Ltd レーザー加工装置
JP2001150176A (ja) * 1999-11-22 2001-06-05 Matsushita Electronics Industry Corp レーザマーキング集塵装置
KR20050078411A (ko) * 2004-01-29 2005-08-05 삼성에스디아이 주식회사 레이저 패터닝 시스템에서의 레이저 모니터링 시스템

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09174262A (ja) * 1995-12-27 1997-07-08 Hitachi Ltd レーザマーカ
JP4555743B2 (ja) * 2005-07-21 2010-10-06 本田技研工業株式会社 レーザ加工ヘッド

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06269975A (ja) * 1993-03-24 1994-09-27 Toshiba Corp 水中レーザー加工装置
JPH1099978A (ja) * 1996-09-27 1998-04-21 Hitachi Ltd レーザー加工装置
JP2001150176A (ja) * 1999-11-22 2001-06-05 Matsushita Electronics Industry Corp レーザマーキング集塵装置
KR20050078411A (ko) * 2004-01-29 2005-08-05 삼성에스디아이 주식회사 레이저 패터닝 시스템에서의 레이저 모니터링 시스템

Also Published As

Publication number Publication date
CN102007568B (zh) 2013-07-10
JP5220133B2 (ja) 2013-06-26
JP2011512256A (ja) 2011-04-21
KR100953686B1 (ko) 2010-04-19
TW200940229A (en) 2009-10-01
WO2009104886A2 (ko) 2009-08-27
CN102007568A (zh) 2011-04-06
KR20090089161A (ko) 2009-08-21
TWI372671B (en) 2012-09-21

Similar Documents

Publication Publication Date Title
WO2009104886A3 (ko) 레이저 가공장치
WO2010059210A3 (en) Systems and methods for drive laser beam delivery in an euv light source
WO2008149949A1 (ja) レーザー加工方法及びレーザー加工品
JP2007075886A5 (ko)
JP2013513487A5 (ko)
TW200728219A (en) Laser cutting device and cutting method
WO2016010954A3 (en) System for and method of processing transparent materials using laser beam focal lines adjustable in length and diameter
GB2520905A (en) Advanced handler wafer debonding method
WO2013016646A8 (en) System for lighting apparatus utilizing light active sheet material with integrated light emitting diode, window with lighting apparatus, conveyance with lighting apparatus, and method of providing lighting apparatus
MY147833A (en) Laser processing method
TW200615615A (en) Apparatus for cutting substrate and method using the same
TW200735990A (en) Method for cutting substrate and substrate cutting apparatus using the same
TW200501251A (en) Manufacturing method of laser-processed products and adhesive sheet for laser processing in the manufacturing method
MY146877A (en) Laser processing method and laser processing apparatus
ATE449326T1 (de) Multiphotonen-anregungsbeobachtungsvorrichtung
TW201235143A (en) Method and apparatus for improved laser scribing of opto-electric devices
EP1721695A4 (en) LASER PROCESSING FACILITY
ATE469723T1 (de) Vorrichtung zur industriellen verarbeitung eines materials durch optische strahlung
WO2010120796A3 (en) Light generating system and method
WO2009106272A3 (de) Verfahren und laserbearbeitungsgerät zur bearbeitung von biologischem gewebe
WO2010031478A8 (de) Laserbearbeitungsgerät und verfahren zur bearbeitung von biologischem gewebe
WO2009090644A3 (en) Laser surgical apparatus
TW201403692A (zh) 用於以劃線對準之執行中控制而對一實質平面半導體基板劃線之方法及裝置
EP3340402A3 (en) Laser polycrystallization apparatus
EP1837883A3 (en) X-ray generating method and x-ray generating apparatus

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980113095.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09713216

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2010546700

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09713216

Country of ref document: EP

Kind code of ref document: A2