JP5217239B2 - 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 - Google Patents

露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 Download PDF

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JP5217239B2
JP5217239B2 JP2007132800A JP2007132800A JP5217239B2 JP 5217239 B2 JP5217239 B2 JP 5217239B2 JP 2007132800 A JP2007132800 A JP 2007132800A JP 2007132800 A JP2007132800 A JP 2007132800A JP 5217239 B2 JP5217239 B2 JP 5217239B2
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liquid
substrate
exposure
cleaning
during
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JP2008283156A (ja
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勝志 中野
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007132800A 2006-05-18 2007-05-18 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 Expired - Fee Related JP5217239B2 (ja)

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JP2007132800A JP5217239B2 (ja) 2006-05-18 2007-05-18 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

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JP2006139614 2006-05-18
JP2006139614 2006-05-18
JP2006140957 2006-05-19
JP2006140957 2006-05-19
JP2007103343 2007-04-10
JP2007103343 2007-04-10
JP2007132800A JP5217239B2 (ja) 2006-05-18 2007-05-18 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

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JP2008283156A JP2008283156A (ja) 2008-11-20
JP5217239B2 true JP5217239B2 (ja) 2013-06-19

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JP2012080199A Pending JP2012164992A (ja) 2006-05-18 2012-03-30 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

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US (2) US8514366B2 (enrdf_load_stackoverflow)
EP (1) EP2037486A4 (enrdf_load_stackoverflow)
JP (2) JP5217239B2 (enrdf_load_stackoverflow)
KR (1) KR20090018024A (enrdf_load_stackoverflow)
CN (2) CN101410948B (enrdf_load_stackoverflow)
SG (1) SG175671A1 (enrdf_load_stackoverflow)
TW (1) TW200805000A (enrdf_load_stackoverflow)
WO (1) WO2007135990A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11667125B2 (en) 2018-07-13 2023-06-06 Hewlett-Packard Development Company, L.P. Print liquid supply
US11981143B2 (en) 2018-07-13 2024-05-14 Hewlett-Packard Development Company, L.P. Print liquid supply

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
EP1965414A4 (en) * 2005-12-06 2010-08-25 Nikon Corp EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
WO2008001871A1 (fr) * 2006-06-30 2008-01-03 Nikon Corporation Procédé de maintenance, procédé d'exposition et procédé de fabrication d'appareil et de dispositif
US7841352B2 (en) 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9019466B2 (en) 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
NL1035942A1 (nl) 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
NL1036273A1 (nl) 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009182110A (ja) * 2008-01-30 2009-08-13 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP2009295933A (ja) * 2008-06-09 2009-12-17 Canon Inc ダミー露光基板及びその製造方法、液浸露光装置、並びに、デバイス製造方法
JP2010103363A (ja) * 2008-10-24 2010-05-06 Nec Electronics Corp 液浸露光装置の洗浄方法、ダミーウェハ、及び液浸露光装置
TW201017347A (en) * 2008-10-31 2010-05-01 Nikon Corp Exposure device, exposure method, and device manufacturing method
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
JP2010278299A (ja) * 2009-05-29 2010-12-09 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
NL2005167A (en) * 2009-10-02 2011-04-05 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
JP5655793B2 (ja) * 2009-12-18 2015-01-21 株式会社ニコン 基板処理装置のメンテナンス方法および安全装置
KR20130083901A (ko) * 2010-07-20 2013-07-23 가부시키가이샤 니콘 노광 방법, 노광 장치 및 세정 방법
US20120057139A1 (en) * 2010-08-04 2012-03-08 Nikon Corporation Cleaning method, device manufacturing method, cleaning substrate, liquid immersion member, liquid immersion exposure apparatus, and dummy substrate
US20120188521A1 (en) * 2010-12-27 2012-07-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium
NL2008183A (en) * 2011-02-25 2012-08-28 Asml Netherlands Bv A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method.
US20130057837A1 (en) * 2011-04-06 2013-03-07 Nikon Corporation Exposure apparatus, exposure method, device-manufacturing method, program, and recording medium
TWI503553B (zh) * 2011-10-19 2015-10-11 Johnstech Int Corp 用於微電路測試器的導電開爾文接觸件
KR102071873B1 (ko) * 2012-12-27 2020-02-03 삼성디스플레이 주식회사 용매 제거장치 및 이를 포함하는 포토리소그래피 장치
KR101573450B1 (ko) * 2014-07-17 2015-12-11 주식회사 아이에스시 테스트용 소켓
NL2015049A (en) 2014-08-07 2016-07-08 Asml Netherlands Bv A lithography apparatus, a method of manufacturing a device and a control program.
CN112965341B (zh) * 2015-11-20 2024-06-28 Asml荷兰有限公司 光刻设备和操作光刻设备的方法
CN118963073A (zh) 2018-11-09 2024-11-15 Asml控股股份有限公司 用于清洁光刻设备内的支撑件的设备和方法

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5559582A (en) * 1992-08-28 1996-09-24 Nikon Corporation Exposure apparatus
JPH08313842A (ja) 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
SG102627A1 (en) 1996-11-28 2004-03-26 Nikon Corp Lithographic device
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH1123692A (ja) 1997-06-30 1999-01-29 Sekisui Chem Co Ltd 地中探査用アンテナ
JPH1128790A (ja) 1997-07-09 1999-02-02 Asahi Chem Ind Co Ltd 紫外線遮蔽用熱可塑性樹脂板
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
IL138374A (en) 1998-03-11 2004-07-25 Nikon Corp An ultraviolet laser device and an exposure device that includes such a device
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
AU3849199A (en) 1998-05-19 1999-12-06 Nikon Corporation Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US6611316B2 (en) 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US20050059617A1 (en) 2001-09-17 2005-03-17 Takeshi Imanishi Novel anitsense oligonucleotide derivatives against to hepatitis c virus
JP2005508178A (ja) 2001-11-08 2005-03-31 デヴェロゲン アクチエンゲゼルシャフト フュア エントヴィックルングスビオローギッシェ フォルシュング エネルギー恒常性の調節に関与するＭｅｎタンパク質、ＧＳＴ２、Ｒａｂ−ＲＰ１、Ｃｓｐ、Ｆ−ボックスタンパク質Ｌｉｌｉｎａ／ＦＢＬ７、ＡＢＣ５０、コロニン、Ｓｅｃ６１α、またはＶｈａＰＰＡ１−１、または相同性タンパク質
JP4214729B2 (ja) 2002-07-25 2009-01-28 コニカミノルタホールディングス株式会社 硬化性白インク組成物
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6893629B2 (en) 2002-10-30 2005-05-17 Isp Investments Inc. Delivery system for a tooth whitener
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
JP4184346B2 (ja) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上のスポットを照射するための方法及び装置における液体除去
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
KR101562447B1 (ko) 2003-02-26 2015-10-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2004304135A (ja) 2003-04-01 2004-10-28 Nikon Corp 露光装置、露光方法及びマイクロデバイスの製造方法
ATE449982T1 (de) 2003-04-11 2009-12-15 Nikon Corp Reinigungsverfahren für optik in immersionslithographie
JP2005277363A (ja) * 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
TW200509205A (en) 2003-05-23 2005-03-01 Nippon Kogaku Kk Exposure method and device-manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101729866B1 (ko) * 2003-06-13 2017-04-24 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
US7370659B2 (en) * 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
JP4305095B2 (ja) * 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR20060126949A (ko) 2003-10-08 2006-12-11 가부시키가이샤 니콘 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법
US20050122218A1 (en) 2003-12-06 2005-06-09 Goggin Christopher M. Ranging and warning device using emitted and reflected wave energy
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076323A1 (ja) * 2004-02-10 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101264936B1 (ko) * 2004-06-04 2013-05-15 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101421915B1 (ko) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP3190605B1 (en) * 2004-06-21 2018-05-09 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP2006013806A (ja) 2004-06-24 2006-01-12 Maspro Denkoh Corp 信号処理装置及びｃａｔｖ用ヘッドエンド装置
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
JP4534651B2 (ja) * 2004-08-03 2010-09-01 株式会社ニコン 露光装置、デバイス製造方法及び液体回収方法
KR101354801B1 (ko) 2004-08-03 2014-01-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4772306B2 (ja) 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
KR101157003B1 (ko) 2004-09-30 2012-06-21 가부시키가이샤 니콘 투영 광학 디바이스 및 노광 장치
CN101044594B (zh) * 2004-10-26 2010-05-12 株式会社尼康 衬底处理方法、曝光装置及器件制造方法
JP4848956B2 (ja) * 2004-11-01 2011-12-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7362412B2 (en) 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US7732123B2 (en) 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
KR101339887B1 (ko) 2004-12-06 2013-12-10 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법
JP4752473B2 (ja) * 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
WO2006122578A1 (en) 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7969548B2 (en) 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US8564759B2 (en) 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography

Cited By (2)

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US11981143B2 (en) 2018-07-13 2024-05-14 Hewlett-Packard Development Company, L.P. Print liquid supply

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CN101410948B (zh) 2011-10-26
EP2037486A1 (en) 2009-03-18
US20130301019A1 (en) 2013-11-14
US8514366B2 (en) 2013-08-20
JP2012164992A (ja) 2012-08-30
US20090066922A1 (en) 2009-03-12
JP2008283156A (ja) 2008-11-20
EP2037486A4 (en) 2012-01-11
CN102298274A (zh) 2011-12-28
CN101410948A (zh) 2009-04-15
KR20090018024A (ko) 2009-02-19
SG175671A1 (en) 2011-11-28

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