JP5216981B2 - 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア - Google Patents
半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア Download PDFInfo
- Publication number
- JP5216981B2 JP5216981B2 JP2008178758A JP2008178758A JP5216981B2 JP 5216981 B2 JP5216981 B2 JP 5216981B2 JP 2008178758 A JP2008178758 A JP 2008178758A JP 2008178758 A JP2008178758 A JP 2008178758A JP 5216981 B2 JP5216981 B2 JP 5216981B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- less
- mass
- alloy
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 206
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 64
- 238000005096 rolling process Methods 0.000 claims description 60
- 239000000843 powder Substances 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 33
- 238000005097 cold rolling Methods 0.000 claims description 25
- 238000003825 pressing Methods 0.000 claims description 24
- 230000032683 aging Effects 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 238000004663 powder metallurgy Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 4
- 239000010949 copper Substances 0.000 description 73
- 230000017525 heat dissipation Effects 0.000 description 53
- 229910052751 metal Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 35
- 239000000463 material Substances 0.000 description 34
- 230000009467 reduction Effects 0.000 description 32
- 239000002131 composite material Substances 0.000 description 28
- 239000000919 ceramic Substances 0.000 description 27
- 239000002245 particle Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- 238000007747 plating Methods 0.000 description 17
- 229910017315 Mo—Cu Inorganic materials 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 239000002994 raw material Substances 0.000 description 12
- 238000011049 filling Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 7
- 230000008595 infiltration Effects 0.000 description 7
- 238000001764 infiltration Methods 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- 238000005219 brazing Methods 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 229910000833 kovar Inorganic materials 0.000 description 5
- 239000002905 metal composite material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000007670 refining Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 239000003832 thermite Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010299 mechanically pulverizing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F3/26—Impregnating
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/06—Alloys based on chromium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/248—Thermal after-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008178758A JP5216981B2 (ja) | 2007-07-09 | 2008-07-09 | 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007179617 | 2007-07-09 | ||
| JP2007179617 | 2007-07-09 | ||
| JP2008178758A JP5216981B2 (ja) | 2007-07-09 | 2008-07-09 | 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009140858A Division JP5531329B2 (ja) | 2007-07-09 | 2009-06-12 | 半導体用放熱部品を基体とするパッケージ |
| JP2012105709A Division JP2012216844A (ja) | 2007-07-09 | 2012-05-07 | 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009038366A JP2009038366A (ja) | 2009-02-19 |
| JP2009038366A5 JP2009038366A5 (fr) | 2009-07-30 |
| JP5216981B2 true JP5216981B2 (ja) | 2013-06-19 |
Family
ID=40228628
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008178758A Active JP5216981B2 (ja) | 2007-07-09 | 2008-07-09 | 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア |
| JP2009140858A Active JP5531329B2 (ja) | 2007-07-09 | 2009-06-12 | 半導体用放熱部品を基体とするパッケージ |
| JP2012105709A Pending JP2012216844A (ja) | 2007-07-09 | 2012-05-07 | 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009140858A Active JP5531329B2 (ja) | 2007-07-09 | 2009-06-12 | 半導体用放熱部品を基体とするパッケージ |
| JP2012105709A Pending JP2012216844A (ja) | 2007-07-09 | 2012-05-07 | 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア |
Country Status (2)
| Country | Link |
|---|---|
| JP (3) | JP5216981B2 (fr) |
| WO (1) | WO2009008457A1 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101679104B1 (ko) * | 2009-10-01 | 2016-11-23 | 제이에프이 세이미츠 가부시키가이샤 | 전자 기기용 히트 싱크 및 그의 제조 프로세스 |
| US8766430B2 (en) | 2012-06-14 | 2014-07-01 | Infineon Technologies Ag | Semiconductor modules and methods of formation thereof |
| US9041460B2 (en) | 2013-08-12 | 2015-05-26 | Infineon Technologies Ag | Packaged power transistors and power packages |
| JP6564244B2 (ja) * | 2015-05-28 | 2019-08-21 | 日本電波工業株式会社 | 発振装置および発振装置の製造方法 |
| JP6981846B2 (ja) * | 2017-10-26 | 2021-12-17 | Jfe精密株式会社 | 放熱板及びその製造方法 |
| JP6775071B2 (ja) * | 2018-10-05 | 2020-10-28 | 日本特殊陶業株式会社 | 配線基板 |
| JP6936839B2 (ja) * | 2018-10-05 | 2021-09-22 | 日本特殊陶業株式会社 | 配線基板 |
| CN111584371B (zh) * | 2020-05-25 | 2022-04-01 | 苏州融睿电子科技有限公司 | 一种封装壳体的制作方法、封装壳体 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59159975A (ja) * | 1983-03-02 | 1984-09-10 | Sumitomo Metal Ind Ltd | Ａｌ含有フエライト系クロムステンレス鋼 |
| JPH04198439A (ja) * | 1990-11-29 | 1992-07-17 | Sumitomo Electric Ind Ltd | 半導体用装置材料とその製造方法 |
| JPH09324230A (ja) * | 1996-06-06 | 1997-12-16 | Furukawa Electric Co Ltd:The | 高導電線材 |
| JP3490853B2 (ja) * | 1996-11-08 | 2004-01-26 | 独立行政法人物質・材料研究機構 | 高強度で高電導性の高Ｃｒ含有銅合金材とその製造方法 |
| JP4346142B2 (ja) * | 1999-02-24 | 2009-10-21 | 古河電気工業株式会社 | 低熱膨張係数高熱伝導性銅合金および前記銅合金が用いられた電気電子機器部品 |
| JP2002332503A (ja) * | 2001-05-08 | 2002-11-22 | Japan Atom Energy Res Inst | プラズマ放電焼結法を用いたＦｅ−５０Ｃｒ合金の製造方法 |
| JP3898954B2 (ja) * | 2001-06-05 | 2007-03-28 | 新日本製鐵株式会社 | 形状凍結性に優れたフェライト系薄鋼板およびその製造方法 |
| JP5072155B2 (ja) * | 2001-09-14 | 2012-11-14 | 日新製鋼株式会社 | 成形加工性に優れた高純度Ｆｅ−Ｃｒ合金 |
| JP2006013420A (ja) * | 2004-01-28 | 2006-01-12 | Kyocera Corp | 電子部品収納用パッケージおよび電子装置 |
| JP4213134B2 (ja) * | 2004-04-15 | 2009-01-21 | Ｊｆｅ精密株式会社 | Ｃｕ−Ｃｒ合金及びＣｕ−Ｃｒ合金の製造方法 |
| JP4312653B2 (ja) * | 2004-04-28 | 2009-08-12 | 新日鐵住金ステンレス株式会社 | 耐熱性および加工性に優れたフェライト系ステンレス鋼およびその製造方法 |
| JP4518834B2 (ja) * | 2004-05-12 | 2010-08-04 | 新日鐵住金ステンレス株式会社 | 加工性に優れた耐熱フェライト系ステンレス鋼板の製造方法 |
| EP2439295B1 (fr) * | 2006-02-15 | 2016-08-24 | Jfe Precision Corporation | Procédé pour la production d'un alliage de Cr-Cu |
-
2008
- 2008-07-09 JP JP2008178758A patent/JP5216981B2/ja active Active
- 2008-07-09 WO PCT/JP2008/062425 patent/WO2009008457A1/fr active Application Filing
-
2009
- 2009-06-12 JP JP2009140858A patent/JP5531329B2/ja active Active
-
2012
- 2012-05-07 JP JP2012105709A patent/JP2012216844A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009038366A (ja) | 2009-02-19 |
| JP5531329B2 (ja) | 2014-06-25 |
| JP2012216844A (ja) | 2012-11-08 |
| WO2009008457A1 (fr) | 2009-01-15 |
| JP2009239299A (ja) | 2009-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5531329B2 (ja) | 半導体用放熱部品を基体とするパッケージ | |
| KR100958560B1 (ko) | 반도체 장치 방열용 합금재 및 그 제조 방법 | |
| JP4213134B2 (ja) | Ｃｕ−Ｃｒ合金及びＣｕ−Ｃｒ合金の製造方法 | |
| CN106796927B (zh) | 散热基板及该散热基板的制造方法 | |
| KR101037884B1 (ko) | Ｃｒ-Ｃｕ 합금, 그 제조 방법, 반도체용 방열판 및 반도체용 방열 부품 | |
| CN106663663B (zh) | 接合体及其制造方法、自带散热器的功率模块用基板及其制造方法、散热器及其制造方法 | |
| JP5698947B2 (ja) | 電子機器用放熱板およびその製造方法 | |
| US6737168B1 (en) | Composite material and semiconductor device using the same | |
| CN106489197B (zh) | 接合体、自带散热器的功率模块用基板、散热器、接合体的制造方法、自带散热器的功率模块用基板的制造方法及散热器的制造方法 | |
| JP2007142126A (ja) | 複合材料及び半導体搭載用放熱基板、及びそれを用いたセラミックパッケージ | |
| JP6083634B2 (ja) | 放熱基板及び該放熱基板の製造方法 | |
| JP5030633B2 (ja) | Ｃｒ−Ｃｕ合金板、半導体用放熱板及び半導体用放熱部品 | |
| JP4138844B2 (ja) | Ｃｒ−Ｃｕ合金およびその製造方法ならびに半導体用放熱板と半導体用放熱部品 | |
| JP2010126791A (ja) | 放熱材料およびそれを用いた半導体用放熱板と半導体用放熱部品、並びに放熱材料の製造方法 | |
| JP5286507B2 (ja) | Ｃｒ−Ｃｕ合金板の製造方法 | |
| JP2001217364A (ja) | Ａｌ−ＳｉＣ複合体 | |
| JP2001284509A (ja) | Ａｌ−ＳｉＣ複合体 | |
| JP2016111328A (ja) | 放熱基板と、それを使用した半導体パッケージと半導体モジュール | |
| JPH1017959A (ja) | 複合材及びその製造方法 | |
| JP2003268478A (ja) | Ａｌ−ＳｉＣ系複合体 | |
| JP2001332668A (ja) | Ａｌ−ＳｉＣ複合体 | |
| JP2001284508A (ja) | Ａｌ−ＳｉＣ複合体 | |
| JP2003268482A (ja) | Ａｌ−ＳｉＣ系複合体 | |
| JP2017098574A (ja) | 放熱基板及び該放熱基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AA64 | Notification of invalidation of claim of internal priority (with term) |
Free format text: JAPANESE INTERMEDIATE CODE: A241764 Effective date: 20080722 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080730 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090612 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110128 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110128 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120223 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120306 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120507 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130205 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130205 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160315 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5216981 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |