WO2009008457A1 - Composant de rayonnement de chaleur, boîtier, dispositif porteur et conditionnement pour composant électronique - Google Patents

Composant de rayonnement de chaleur, boîtier, dispositif porteur et conditionnement pour composant électronique Download PDF

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Publication number
WO2009008457A1
WO2009008457A1 PCT/JP2008/062425 JP2008062425W WO2009008457A1 WO 2009008457 A1 WO2009008457 A1 WO 2009008457A1 JP 2008062425 W JP2008062425 W JP 2008062425W WO 2009008457 A1 WO2009008457 A1 WO 2009008457A1
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WO
WIPO (PCT)
Prior art keywords
electronic component
component
mass
heat radiating
package
Prior art date
Application number
PCT/JP2008/062425
Other languages
English (en)
Japanese (ja)
Inventor
Hoshiaki Terao
Hiroki Ota
Hideaki Kobiki
Takashi Sawai
Tetsurou Abumita
Original Assignee
Jfe Precision Corporation
Jfe Steel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jfe Precision Corporation, Jfe Steel Corporation filed Critical Jfe Precision Corporation
Publication of WO2009008457A1 publication Critical patent/WO2009008457A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F3/26—Impregnating
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/248—Thermal after-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)

Abstract

Cette invention concerne un composant de rayonnement de la chaleur destiné à un composant électronique utilisant un alliage Cr-Cu et un boîtier pour un composant électronique, un dispositif porteur pour un composant électronique ou un conditionnement pour un composant électronique utilisant le composant de rayonnement de chaleur. Le composant de rayonnement de chaleur comprend un produit moulé fabriqué par pression à froid d'une plaque d'alliage Cr-Cu produite en soumettant un alliage Cr-Cu à une métallurgie de la poudre. Le produit moulé comprend plus de 30 % en masse et pas plus de 80 % en masse de Cr, l'équilibre étant constitué de Cu et d'impuretés inévitables. Les impuretés inévitables sont : O : pas plus de 0,15 % en masse, N : pas plus de 0,1 % en masse, C : pas plus de 0,1 % en masse, Al : pas plus de 0,05 % en masse et SI : pas plus de 0,1 % en masse.
PCT/JP2008/062425 2007-07-09 2008-07-09 Composant de rayonnement de chaleur, boîtier, dispositif porteur et conditionnement pour composant électronique WO2009008457A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007179617 2007-07-09
JP2007-179617 2007-07-09

Publications (1)

Publication Number Publication Date
WO2009008457A1 true WO2009008457A1 (fr) 2009-01-15

Family

ID=40228628

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062425 WO2009008457A1 (fr) 2007-07-09 2008-07-09 Composant de rayonnement de chaleur, boîtier, dispositif porteur et conditionnement pour composant électronique

Country Status (2)

Country Link
JP (3) JP5216981B2 (fr)
WO (1) WO2009008457A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102612745A (zh) * 2009-10-01 2012-07-25 Jfe精密株式会社 电子设备用散热板及其制造方法
WO2016190130A1 (fr) * 2015-05-28 2016-12-01 日本電波工業株式会社 Dispositif d'oscillation
CN111584371A (zh) * 2020-05-25 2020-08-25 苏州融睿电子科技有限公司 一种封装壳体的制作方法、封装壳体

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766430B2 (en) 2012-06-14 2014-07-01 Infineon Technologies Ag Semiconductor modules and methods of formation thereof
US9041460B2 (en) 2013-08-12 2015-05-26 Infineon Technologies Ag Packaged power transistors and power packages
JP6981846B2 (ja) * 2017-10-26 2021-12-17 Jfe精密株式会社 放熱板及びその製造方法
JP6775071B2 (ja) * 2018-10-05 2020-10-28 日本特殊陶業株式会社 配線基板
JP6936839B2 (ja) * 2018-10-05 2021-09-22 日本特殊陶業株式会社 配線基板

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536492B2 (fr) * 1983-03-02 1993-05-31 Sumitomo Metal Ind
JP2002332503A (ja) * 2001-05-08 2002-11-22 Japan Atom Energy Res Inst プラズマ放電焼結法を用いたＦｅ−５０Ｃｒ合金の製造方法
JP2003055739A (ja) * 2001-06-05 2003-02-26 Nippon Steel Corp 形状凍結性に優れたフェライト系薄鋼板
JP2003089853A (ja) * 2001-09-14 2003-03-28 Nisshin Steel Co Ltd 成形加工性に優れた高純度Ｆｅ−Ｃｒ合金
JP2005314740A (ja) * 2004-04-28 2005-11-10 Nippon Steel & Sumikin Stainless Steel Corp 耐熱性および加工性に優れたフェライト系ステンレス鋼およびその製造方法
JP2005325377A (ja) * 2004-05-12 2005-11-24 Nippon Steel & Sumikin Stainless Steel Corp 加工性に優れた耐熱フェライト系ステンレス鋼板の製造方法
JP2005330583A (ja) * 2004-04-15 2005-12-02 Jfe Seimitsu Kk Ｃｕ−Ｃｒ合金及びＣｕ−Ｃｒ合金の製造方法
WO2007094507A1 (fr) * 2006-02-15 2007-08-23 Jfe Precision Corporation ALLIAGE Cr-Cu, SON PROCEDE DE FABRICATION, DISSIPATEUR THERMIQUE POUR SEMICONDUCTEUR ET COMPOSANT DE DISSIPATEUR THERMIQUE POUR SEMICONDUCTEUR

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04198439A (ja) * 1990-11-29 1992-07-17 Sumitomo Electric Ind Ltd 半導体用装置材料とその製造方法
JPH09324230A (ja) * 1996-06-06 1997-12-16 Furukawa Electric Co Ltd:The 高導電線材
JP3490853B2 (ja) * 1996-11-08 2004-01-26 独立行政法人物質・材料研究機構 高強度で高電導性の高Ｃｒ含有銅合金材とその製造方法
JP4346142B2 (ja) * 1999-02-24 2009-10-21 古河電気工業株式会社 低熱膨張係数高熱伝導性銅合金および前記銅合金が用いられた電気電子機器部品
JP2006013420A (ja) * 2004-01-28 2006-01-12 Kyocera Corp 電子部品収納用パッケージおよび電子装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536492B2 (fr) * 1983-03-02 1993-05-31 Sumitomo Metal Ind
JP2002332503A (ja) * 2001-05-08 2002-11-22 Japan Atom Energy Res Inst プラズマ放電焼結法を用いたＦｅ−５０Ｃｒ合金の製造方法
JP2003055739A (ja) * 2001-06-05 2003-02-26 Nippon Steel Corp 形状凍結性に優れたフェライト系薄鋼板
JP2003089853A (ja) * 2001-09-14 2003-03-28 Nisshin Steel Co Ltd 成形加工性に優れた高純度Ｆｅ−Ｃｒ合金
JP2005330583A (ja) * 2004-04-15 2005-12-02 Jfe Seimitsu Kk Ｃｕ−Ｃｒ合金及びＣｕ−Ｃｒ合金の製造方法
JP2005314740A (ja) * 2004-04-28 2005-11-10 Nippon Steel & Sumikin Stainless Steel Corp 耐熱性および加工性に優れたフェライト系ステンレス鋼およびその製造方法
JP2005325377A (ja) * 2004-05-12 2005-11-24 Nippon Steel & Sumikin Stainless Steel Corp 加工性に優れた耐熱フェライト系ステンレス鋼板の製造方法
WO2007094507A1 (fr) * 2006-02-15 2007-08-23 Jfe Precision Corporation ALLIAGE Cr-Cu, SON PROCEDE DE FABRICATION, DISSIPATEUR THERMIQUE POUR SEMICONDUCTEUR ET COMPOSANT DE DISSIPATEUR THERMIQUE POUR SEMICONDUCTEUR

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102612745A (zh) * 2009-10-01 2012-07-25 Jfe精密株式会社 电子设备用散热板及其制造方法
US9299636B2 (en) 2009-10-01 2016-03-29 Jfe Precision Corporation Heat sink for electronic device and process for production thereof
WO2016190130A1 (fr) * 2015-05-28 2016-12-01 日本電波工業株式会社 Dispositif d'oscillation
US10305491B2 (en) 2015-05-28 2019-05-28 Nihon Dempa Kogyo Co., Ltd. Oscillator
CN111584371A (zh) * 2020-05-25 2020-08-25 苏州融睿电子科技有限公司 一种封装壳体的制作方法、封装壳体

Also Published As

Publication number Publication date
JP5531329B2 (ja) 2014-06-25
JP2012216844A (ja) 2012-11-08
JP5216981B2 (ja) 2013-06-19
JP2009038366A (ja) 2009-02-19
JP2009239299A (ja) 2009-10-15

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