JP5216981B2 - 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア - Google Patents

半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア Download PDF

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Publication number
JP5216981B2
JP5216981B2 JP2008178758A JP2008178758A JP5216981B2 JP 5216981 B2 JP5216981 B2 JP 5216981B2 JP 2008178758 A JP2008178758 A JP 2008178758A JP 2008178758 A JP2008178758 A JP 2008178758A JP 5216981 B2 JP5216981 B2 JP 5216981B2
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Japan
Prior art keywords
semiconductor
less
mass
alloy
content
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Japanese (ja)
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JP2009038366A5 (enrdf_load_stackoverflow
JP2009038366A (ja
Inventor
星明 寺尾
裕樹 太田
英明 小日置
隆 澤井
哲郎 鐙田
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JFE Steel Corp
JFE Precision Corp
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JFE Steel Corp
JFE Precision Corp
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Publication of JP2009038366A5 publication Critical patent/JP2009038366A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F3/26—Impregnating
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/248—Thermal after-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
JP2008178758A 2007-07-09 2008-07-09 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア Active JP5216981B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008178758A JP5216981B2 (ja) 2007-07-09 2008-07-09 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007179617 2007-07-09
JP2007179617 2007-07-09
JP2008178758A JP5216981B2 (ja) 2007-07-09 2008-07-09 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009140858A Division JP5531329B2 (ja) 2007-07-09 2009-06-12 半導体用放熱部品を基体とするパッケージ
JP2012105709A Division JP2012216844A (ja) 2007-07-09 2012-05-07 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア

Publications (3)

Publication Number Publication Date
JP2009038366A JP2009038366A (ja) 2009-02-19
JP2009038366A5 JP2009038366A5 (enrdf_load_stackoverflow) 2009-07-30
JP5216981B2 true JP5216981B2 (ja) 2013-06-19

Family

ID=40228628

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008178758A Active JP5216981B2 (ja) 2007-07-09 2008-07-09 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア
JP2009140858A Active JP5531329B2 (ja) 2007-07-09 2009-06-12 半導体用放熱部品を基体とするパッケージ
JP2012105709A Pending JP2012216844A (ja) 2007-07-09 2012-05-07 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2009140858A Active JP5531329B2 (ja) 2007-07-09 2009-06-12 半導体用放熱部品を基体とするパッケージ
JP2012105709A Pending JP2012216844A (ja) 2007-07-09 2012-05-07 半導体用放熱部品およびそれを取付けた半導体用ケース、半導体用キャリア

Country Status (2)

Country Link
JP (3) JP5216981B2 (enrdf_load_stackoverflow)
WO (1) WO2009008457A1 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299636B2 (en) 2009-10-01 2016-03-29 Jfe Precision Corporation Heat sink for electronic device and process for production thereof
US8766430B2 (en) 2012-06-14 2014-07-01 Infineon Technologies Ag Semiconductor modules and methods of formation thereof
US9041460B2 (en) 2013-08-12 2015-05-26 Infineon Technologies Ag Packaged power transistors and power packages
JP6564244B2 (ja) 2015-05-28 2019-08-21 日本電波工業株式会社 発振装置および発振装置の製造方法
JP6981846B2 (ja) * 2017-10-26 2021-12-17 Jfe精密株式会社 放熱板及びその製造方法
JP6775071B2 (ja) * 2018-10-05 2020-10-28 日本特殊陶業株式会社 配線基板
JP6936839B2 (ja) * 2018-10-05 2021-09-22 日本特殊陶業株式会社 配線基板
CN111584371B (zh) * 2020-05-25 2022-04-01 苏州融睿电子科技有限公司 一种封装壳体的制作方法、封装壳体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59159975A (ja) * 1983-03-02 1984-09-10 Sumitomo Metal Ind Ltd Ａｌ含有フエライト系クロムステンレス鋼
JPH04198439A (ja) * 1990-11-29 1992-07-17 Sumitomo Electric Ind Ltd 半導体用装置材料とその製造方法
JPH09324230A (ja) * 1996-06-06 1997-12-16 Furukawa Electric Co Ltd:The 高導電線材
JP3490853B2 (ja) * 1996-11-08 2004-01-26 独立行政法人物質・材料研究機構 高強度で高電導性の高Ｃｒ含有銅合金材とその製造方法
JP4346142B2 (ja) * 1999-02-24 2009-10-21 古河電気工業株式会社 低熱膨張係数高熱伝導性銅合金および前記銅合金が用いられた電気電子機器部品
JP2002332503A (ja) * 2001-05-08 2002-11-22 Japan Atom Energy Res Inst プラズマ放電焼結法を用いたＦｅ−５０Ｃｒ合金の製造方法
JP3898954B2 (ja) * 2001-06-05 2007-03-28 新日本製鐵株式会社 形状凍結性に優れたフェライト系薄鋼板およびその製造方法
JP5072155B2 (ja) * 2001-09-14 2012-11-14 日新製鋼株式会社 成形加工性に優れた高純度Ｆｅ−Ｃｒ合金
JP2006013420A (ja) * 2004-01-28 2006-01-12 Kyocera Corp 電子部品収納用パッケージおよび電子装置
JP4213134B2 (ja) * 2004-04-15 2009-01-21 Ｊｆｅ精密株式会社 Ｃｕ−Ｃｒ合金及びＣｕ−Ｃｒ合金の製造方法
JP4312653B2 (ja) * 2004-04-28 2009-08-12 新日鐵住金ステンレス株式会社 耐熱性および加工性に優れたフェライト系ステンレス鋼およびその製造方法
JP4518834B2 (ja) * 2004-05-12 2010-08-04 新日鐵住金ステンレス株式会社 加工性に優れた耐熱フェライト系ステンレス鋼板の製造方法
EP2439295B1 (en) * 2006-02-15 2016-08-24 Jfe Precision Corporation Method for producing a Cr-Cu-alloy

Also Published As

Publication number Publication date
JP5531329B2 (ja) 2014-06-25
WO2009008457A1 (ja) 2009-01-15
JP2009239299A (ja) 2009-10-15
JP2012216844A (ja) 2012-11-08
JP2009038366A (ja) 2009-02-19

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