JP5212760B2 - イオン注入装置用のイオン源およびそのためのリペラ - Google Patents

イオン注入装置用のイオン源およびそのためのリペラ Download PDF

Info

Publication number
JP5212760B2
JP5212760B2 JP2001233658A JP2001233658A JP5212760B2 JP 5212760 B2 JP5212760 B2 JP 5212760B2 JP 2001233658 A JP2001233658 A JP 2001233658A JP 2001233658 A JP2001233658 A JP 2001233658A JP 5212760 B2 JP5212760 B2 JP 5212760B2
Authority
JP
Japan
Prior art keywords
repeller
ion
ionization chamber
source
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001233658A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002117780A (ja
JP2002117780A5 (enExample
Inventor
ネイル ホースキー トーマス
デイル ホリングスワース トミー
Original Assignee
アクセリス テクノロジーズ インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アクセリス テクノロジーズ インコーポレーテッド filed Critical アクセリス テクノロジーズ インコーポレーテッド
Publication of JP2002117780A publication Critical patent/JP2002117780A/ja
Publication of JP2002117780A5 publication Critical patent/JP2002117780A5/ja
Application granted granted Critical
Publication of JP5212760B2 publication Critical patent/JP5212760B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/10—Duoplasmatrons ; Duopigatrons
    • H01J27/12—Duoplasmatrons ; Duopigatrons provided with an expansion cup

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2001233658A 2000-08-07 2001-08-01 イオン注入装置用のイオン源およびそのためのリペラ Expired - Lifetime JP5212760B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/633,322 US6583544B1 (en) 2000-08-07 2000-08-07 Ion source having replaceable and sputterable solid source material
US633322 2000-08-07

Publications (3)

Publication Number Publication Date
JP2002117780A JP2002117780A (ja) 2002-04-19
JP2002117780A5 JP2002117780A5 (enExample) 2008-09-18
JP5212760B2 true JP5212760B2 (ja) 2013-06-19

Family

ID=24539178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001233658A Expired - Lifetime JP5212760B2 (ja) 2000-08-07 2001-08-01 イオン注入装置用のイオン源およびそのためのリペラ

Country Status (5)

Country Link
US (2) US6583544B1 (enExample)
EP (1) EP1220271A3 (enExample)
JP (1) JP5212760B2 (enExample)
KR (1) KR100579379B1 (enExample)
TW (1) TW504759B (enExample)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220295B2 (en) 2003-05-14 2007-05-22 Sharper Image Corporation Electrode self-cleaning mechanisms with anti-arc guard for electro-kinetic air transporter-conditioner devices
US6544485B1 (en) 2001-01-29 2003-04-08 Sharper Image Corporation Electro-kinetic device with enhanced anti-microorganism capability
US7695690B2 (en) 1998-11-05 2010-04-13 Tessera, Inc. Air treatment apparatus having multiple downstream electrodes
US20030206837A1 (en) 1998-11-05 2003-11-06 Taylor Charles E. Electro-kinetic air transporter and conditioner device with enhanced maintenance features and enhanced anti-microorganism capability
US6176977B1 (en) 1998-11-05 2001-01-23 Sharper Image Corporation Electro-kinetic air transporter-conditioner
US7318856B2 (en) 1998-11-05 2008-01-15 Sharper Image Corporation Air treatment apparatus having an electrode extending along an axis which is substantially perpendicular to an air flow path
US20050210902A1 (en) 2004-02-18 2005-09-29 Sharper Image Corporation Electro-kinetic air transporter and/or conditioner devices with features for cleaning emitter electrodes
AU2430601A (en) * 1999-12-13 2001-06-18 Semequip, Inc. Ion implantation ion source, system and method
US20070107841A1 (en) * 2000-12-13 2007-05-17 Semequip, Inc. Ion implantation ion source, system and method
US7838850B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. External cathode ion source
US6583544B1 (en) * 2000-08-07 2003-06-24 Axcelis Technologies, Inc. Ion source having replaceable and sputterable solid source material
AU2002231361A1 (en) * 2000-10-20 2002-04-29 Proteros, Llc System and method for rapidly controlling the output of an ion source for ion implantation
GB0128913D0 (en) * 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus
US20030168609A1 (en) * 2002-03-06 2003-09-11 Marvin Farley Indirectly heated button cathode for an ion source
US6878946B2 (en) * 2002-09-30 2005-04-12 Applied Materials, Inc. Indirectly heated button cathode for an ion source
JP3969324B2 (ja) * 2003-02-27 2007-09-05 富士ゼロックス株式会社 カーボンナノチューブの製造装置
US7405672B2 (en) 2003-04-09 2008-07-29 Sharper Image Corp. Air treatment device having a sensor
US6995079B2 (en) * 2003-08-29 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Ion implantation method and method for manufacturing semiconductor device
US20050051420A1 (en) 2003-09-05 2005-03-10 Sharper Image Corporation Electro-kinetic air transporter and conditioner devices with insulated driver electrodes
US7517503B2 (en) 2004-03-02 2009-04-14 Sharper Image Acquisition Llc Electro-kinetic air transporter and conditioner devices including pin-ring electrode configurations with driver electrode
US7724492B2 (en) 2003-09-05 2010-05-25 Tessera, Inc. Emitter electrode having a strip shape
US7906080B1 (en) 2003-09-05 2011-03-15 Sharper Image Acquisition Llc Air treatment apparatus having a liquid holder and a bipolar ionization device
US7077890B2 (en) 2003-09-05 2006-07-18 Sharper Image Corporation Electrostatic precipitators with insulated driver electrodes
GB2407433B (en) * 2003-10-24 2008-12-24 Applied Materials Inc Cathode and counter-cathode arrangement in an ion source
US7767169B2 (en) 2003-12-11 2010-08-03 Sharper Image Acquisition Llc Electro-kinetic air transporter-conditioner system and method to oxidize volatile organic compounds
US7820981B2 (en) 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
US7638104B2 (en) 2004-03-02 2009-12-29 Sharper Image Acquisition Llc Air conditioner device including pin-ring electrode configurations with driver electrode
KR100581357B1 (ko) * 2004-05-28 2006-05-17 이학주 고체 원소의 플라즈마 발생 방법 및 이를 위한 플라즈마소스
US20060016333A1 (en) 2004-07-23 2006-01-26 Sharper Image Corporation Air conditioner device with removable driver electrodes
US7311762B2 (en) 2004-07-23 2007-12-25 Sharper Image Corporation Air conditioner device with a removable driver electrode
US7285155B2 (en) 2004-07-23 2007-10-23 Taylor Charles E Air conditioner device with enhanced ion output production features
KR20060055681A (ko) * 2004-11-18 2006-05-24 삼성전자주식회사 이온빔 보조 스퍼터링 증착장치
US7494852B2 (en) * 2005-01-06 2009-02-24 International Business Machines Corporation Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits
US7102139B2 (en) * 2005-01-27 2006-09-05 Varian Semiconductor Equipment Associates, Inc. Source arc chamber for ion implanter having repeller electrode mounted to external insulator
US7488958B2 (en) * 2005-03-08 2009-02-10 Axcelis Technologies, Inc. High conductance ion source
JP3758667B1 (ja) * 2005-05-17 2006-03-22 日新イオン機器株式会社 イオン源
US7617972B2 (en) 2005-07-15 2009-11-17 Revolution Money Inc. System and method for disputing individual items that are the subject of a transaction
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
US7361915B2 (en) * 2005-11-30 2008-04-22 Axcelis Technologies, Inc. Beam current stabilization utilizing gas feed control loop
US7833322B2 (en) 2006-02-28 2010-11-16 Sharper Image Acquisition Llc Air treatment apparatus having a voltage control device responsive to current sensing
US9567666B2 (en) * 2009-01-12 2017-02-14 Guardian Industries Corp Apparatus and method for making sputtered films with reduced stress asymmetry
JP5343835B2 (ja) * 2009-12-10 2013-11-13 日新イオン機器株式会社 反射電極構造体及びイオン源
US8319410B2 (en) * 2009-12-29 2012-11-27 Ion Technology Solutions, Llc Cathode ion source
EP2561540A4 (en) 2010-04-09 2014-06-11 E A Fischione Instr Inc IMPROVED ION SOURCE
US8253334B2 (en) * 2010-07-19 2012-08-28 Ion Technology Solutions, Llc Ion source
US20120048723A1 (en) * 2010-08-24 2012-03-01 Varian Semiconductor Equipment Associates, Inc. Sputter target feed system
JP5317038B2 (ja) * 2011-04-05 2013-10-16 日新イオン機器株式会社 イオン源及び反射電極構造体
CN102867719A (zh) * 2011-07-05 2013-01-09 北京中科信电子装备有限公司 一种离子源的绝缘装置
JP5822767B2 (ja) 2012-03-22 2015-11-24 住友重機械イオンテクノロジー株式会社 イオン源装置及びイオンビーム生成方法
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US20140097752A1 (en) * 2012-10-09 2014-04-10 Varian Semiconductor Equipment Associates, Inc. Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
US9865422B2 (en) 2013-03-15 2018-01-09 Nissin Ion Equipment Co., Ltd. Plasma generator with at least one non-metallic component
US9006689B2 (en) * 2013-03-26 2015-04-14 Ion Technology Solutions, Llc Source bushing shielding
US9543110B2 (en) * 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
KR101952698B1 (ko) * 2014-10-27 2019-02-28 엔테그리스, 아이엔씨. 이온 주입 방법 및 장치
TWI559355B (zh) * 2014-12-23 2016-11-21 漢辰科技股份有限公司 離子源
KR101730025B1 (ko) * 2015-04-01 2017-04-26 (주)거성 이온발생장치
US9922795B2 (en) * 2015-07-27 2018-03-20 Varian Semiconductor Equipment Associates, Inc. High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
US9824846B2 (en) * 2016-01-27 2017-11-21 Varian Semiconductor Equipment Associates, Inc. Dual material repeller
US10600611B2 (en) * 2017-12-12 2020-03-24 Applied Materials, Inc. Ion source crucible for solid feed materials
US10892137B2 (en) 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
US11404254B2 (en) 2018-09-19 2022-08-02 Varian Semiconductor Equipment Associates, Inc. Insertable target holder for solid dopant materials
EP3895199A4 (en) * 2018-12-15 2022-09-14 Entegris, Inc. FLUORIDE ION IMPLANTATION SYSTEM WITH NON-TENSION MATERIALS AND METHODS OF USE
JP2020173984A (ja) * 2019-04-11 2020-10-22 株式会社アルバック イオン源及びイオン注入装置並びにマグネシウムイオン生成方法
US11170973B2 (en) 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
US10957509B1 (en) 2019-11-07 2021-03-23 Applied Materials, Inc. Insertable target holder for improved stability and performance for solid dopant materials
US11521821B2 (en) 2021-04-06 2022-12-06 Axcelis Technologies, Inc. Ion source repeller
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source
CN117995632B (zh) * 2024-01-29 2025-05-09 香港科技大学(广州) 离子源、离子注入装置和离子注入方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016421A (en) 1975-02-13 1977-04-05 E. I. Du Pont De Nemours And Company Analytical apparatus with variable energy ion beam source
US4166952A (en) * 1978-02-24 1979-09-04 E. I. Du Pont De Nemours And Company Method and apparatus for the elemental analysis of solids
JPH06101307B2 (ja) * 1987-01-16 1994-12-12 松下電器産業株式会社 金属イオン源
JPH0298451U (enExample) * 1989-01-24 1990-08-06
US5089746A (en) * 1989-02-14 1992-02-18 Varian Associates, Inc. Production of ion beams by chemically enhanced sputtering of solids
JP2794602B2 (ja) * 1989-02-28 1998-09-10 東京エレクトロン株式会社 電子ビーム励起イオン源
US5262652A (en) * 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
US5216952A (en) * 1991-06-07 1993-06-08 Heidelberg Harris Gmbh Brush-type dampening unit in a rotary printing machine
US5216330A (en) * 1992-01-14 1993-06-01 Honeywell Inc. Ion beam gun
US5523652A (en) * 1994-09-26 1996-06-04 Eaton Corporation Microwave energized ion source for ion implantation
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
JPH0917367A (ja) * 1995-06-27 1997-01-17 Nissin Electric Co Ltd イオン源装置
JPH1027553A (ja) * 1996-07-10 1998-01-27 Nissin Electric Co Ltd イオン源
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US5703372A (en) * 1996-10-30 1997-12-30 Eaton Corporation Endcap for indirectly heated cathode of ion source
US5852345A (en) 1996-11-01 1998-12-22 Implant Sciences Corp. Ion source generator auxiliary device for phosphorus and arsenic beams
JP3660457B2 (ja) 1996-12-26 2005-06-15 株式会社東芝 イオン発生装置及びイオン照射装置
JPH10302657A (ja) * 1997-04-22 1998-11-13 Sony Corp イオン注入装置
US6084241A (en) * 1998-06-01 2000-07-04 Motorola, Inc. Method of manufacturing semiconductor devices and apparatus therefor
JP2000223039A (ja) * 1999-01-29 2000-08-11 Sony Corp イオン注入装置のイオン源
US6227140B1 (en) * 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US6583544B1 (en) * 2000-08-07 2003-06-24 Axcelis Technologies, Inc. Ion source having replaceable and sputterable solid source material

Also Published As

Publication number Publication date
KR100579379B1 (ko) 2006-05-12
TW504759B (en) 2002-10-01
JP2002117780A (ja) 2002-04-19
EP1220271A2 (en) 2002-07-03
US6768121B2 (en) 2004-07-27
EP1220271A3 (en) 2003-11-26
US20040000651A1 (en) 2004-01-01
KR20020012515A (ko) 2002-02-16
US6583544B1 (en) 2003-06-24

Similar Documents

Publication Publication Date Title
JP5212760B2 (ja) イオン注入装置用のイオン源およびそのためのリペラ
US7700925B2 (en) Techniques for providing a multimode ion source
TWI648761B (zh) 用於製造帶狀離子束的改良的離子源組件
US7459704B2 (en) Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms
US20110143527A1 (en) Techniques for generating uniform ion beam
US9865422B2 (en) Plasma generator with at least one non-metallic component
JP2001135253A (ja) イオナイザーおよびイオン源
JP2013524467A (ja) 改良型イオン源
US8796649B2 (en) Ion implanter
US8072149B2 (en) Unbalanced ion source
US7223984B2 (en) Helium ion generation method and apparatus
US11004649B2 (en) Ion source device
US8350236B2 (en) Aromatic molecular carbon implantation processes
White Ion sources for use in ion implantation
EP1180783A2 (en) Magnet for generating a magnetic field in an ion source
JP3075129B2 (ja) イオン源
Keller et al. Metal beam production using a high current ion source
US4288716A (en) Ion source having improved cathode
US5675152A (en) Source filament assembly for an ion implant machine
US10217600B1 (en) Indirectly heated cathode ion source assembly
JPH10255675A (ja) 負イオン源
JPH06325710A (ja) マイクロ波イオン源及びイオン打ち込み装置
JPH10289664A (ja) イオン打ち込み装置
Sampayan et al. An improved ion source for ion implantation
Keller et al. Ion sources and implantation systems

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080801

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080801

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110601

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120926

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121220

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130130

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130214

R150 Certificate of patent or registration of utility model

Ref document number: 5212760

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160308

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term