TW504759B - Ion source having replaceable and sputterable solid source material - Google Patents
Ion source having replaceable and sputterable solid source material Download PDFInfo
- Publication number
- TW504759B TW504759B TW090119229A TW90119229A TW504759B TW 504759 B TW504759 B TW 504759B TW 090119229 A TW090119229 A TW 090119229A TW 90119229 A TW90119229 A TW 90119229A TW 504759 B TW504759 B TW 504759B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion
- repeller
- source
- patent application
- scope
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 25
- 239000007787 solid Substances 0.000 title description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 41
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 40
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052796 boron Inorganic materials 0.000 claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 239000011733 molybdenum Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000002079 cooperative effect Effects 0.000 claims 3
- 230000000903 blocking effect Effects 0.000 claims 1
- -1 (Ge) Chemical compound 0.000 abstract description 5
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007943 implant Substances 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/10—Duoplasmatrons ; Duopigatrons
- H01J27/12—Duoplasmatrons ; Duopigatrons provided with an expansion cup
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/633,322 US6583544B1 (en) | 2000-08-07 | 2000-08-07 | Ion source having replaceable and sputterable solid source material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW504759B true TW504759B (en) | 2002-10-01 |
Family
ID=24539178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090119229A TW504759B (en) | 2000-08-07 | 2001-08-07 | Ion source having replaceable and sputterable solid source material |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6583544B1 (enExample) |
| EP (1) | EP1220271A3 (enExample) |
| JP (1) | JP5212760B2 (enExample) |
| KR (1) | KR100579379B1 (enExample) |
| TW (1) | TW504759B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105719927A (zh) * | 2014-12-23 | 2016-06-29 | 汉辰科技股份有限公司 | 离子源 |
| TWI581295B (zh) * | 2012-03-22 | 2017-05-01 | 住友重機械離子技術有限公司 | 離子源裝置及離子束產生方法 |
Families Citing this family (69)
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| US7220295B2 (en) | 2003-05-14 | 2007-05-22 | Sharper Image Corporation | Electrode self-cleaning mechanisms with anti-arc guard for electro-kinetic air transporter-conditioner devices |
| US6544485B1 (en) | 2001-01-29 | 2003-04-08 | Sharper Image Corporation | Electro-kinetic device with enhanced anti-microorganism capability |
| US7695690B2 (en) | 1998-11-05 | 2010-04-13 | Tessera, Inc. | Air treatment apparatus having multiple downstream electrodes |
| US20030206837A1 (en) | 1998-11-05 | 2003-11-06 | Taylor Charles E. | Electro-kinetic air transporter and conditioner device with enhanced maintenance features and enhanced anti-microorganism capability |
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| US20050210902A1 (en) | 2004-02-18 | 2005-09-29 | Sharper Image Corporation | Electro-kinetic air transporter and/or conditioner devices with features for cleaning emitter electrodes |
| AU2430601A (en) * | 1999-12-13 | 2001-06-18 | Semequip, Inc. | Ion implantation ion source, system and method |
| US20070107841A1 (en) * | 2000-12-13 | 2007-05-17 | Semequip, Inc. | Ion implantation ion source, system and method |
| US7838850B2 (en) | 1999-12-13 | 2010-11-23 | Semequip, Inc. | External cathode ion source |
| US6583544B1 (en) * | 2000-08-07 | 2003-06-24 | Axcelis Technologies, Inc. | Ion source having replaceable and sputterable solid source material |
| AU2002231361A1 (en) * | 2000-10-20 | 2002-04-29 | Proteros, Llc | System and method for rapidly controlling the output of an ion source for ion implantation |
| GB0128913D0 (en) * | 2001-12-03 | 2002-01-23 | Applied Materials Inc | Improvements in ion sources for ion implantation apparatus |
| US20030168609A1 (en) * | 2002-03-06 | 2003-09-11 | Marvin Farley | Indirectly heated button cathode for an ion source |
| US6878946B2 (en) * | 2002-09-30 | 2005-04-12 | Applied Materials, Inc. | Indirectly heated button cathode for an ion source |
| JP3969324B2 (ja) * | 2003-02-27 | 2007-09-05 | 富士ゼロックス株式会社 | カーボンナノチューブの製造装置 |
| US7405672B2 (en) | 2003-04-09 | 2008-07-29 | Sharper Image Corp. | Air treatment device having a sensor |
| US6995079B2 (en) * | 2003-08-29 | 2006-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Ion implantation method and method for manufacturing semiconductor device |
| US20050051420A1 (en) | 2003-09-05 | 2005-03-10 | Sharper Image Corporation | Electro-kinetic air transporter and conditioner devices with insulated driver electrodes |
| US7517503B2 (en) | 2004-03-02 | 2009-04-14 | Sharper Image Acquisition Llc | Electro-kinetic air transporter and conditioner devices including pin-ring electrode configurations with driver electrode |
| US7724492B2 (en) | 2003-09-05 | 2010-05-25 | Tessera, Inc. | Emitter electrode having a strip shape |
| US7906080B1 (en) | 2003-09-05 | 2011-03-15 | Sharper Image Acquisition Llc | Air treatment apparatus having a liquid holder and a bipolar ionization device |
| US7077890B2 (en) | 2003-09-05 | 2006-07-18 | Sharper Image Corporation | Electrostatic precipitators with insulated driver electrodes |
| GB2407433B (en) * | 2003-10-24 | 2008-12-24 | Applied Materials Inc | Cathode and counter-cathode arrangement in an ion source |
| US7767169B2 (en) | 2003-12-11 | 2010-08-03 | Sharper Image Acquisition Llc | Electro-kinetic air transporter-conditioner system and method to oxidize volatile organic compounds |
| US7820981B2 (en) | 2003-12-12 | 2010-10-26 | Semequip, Inc. | Method and apparatus for extending equipment uptime in ion implantation |
| US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
| US7638104B2 (en) | 2004-03-02 | 2009-12-29 | Sharper Image Acquisition Llc | Air conditioner device including pin-ring electrode configurations with driver electrode |
| KR100581357B1 (ko) * | 2004-05-28 | 2006-05-17 | 이학주 | 고체 원소의 플라즈마 발생 방법 및 이를 위한 플라즈마소스 |
| US20060016333A1 (en) | 2004-07-23 | 2006-01-26 | Sharper Image Corporation | Air conditioner device with removable driver electrodes |
| US7311762B2 (en) | 2004-07-23 | 2007-12-25 | Sharper Image Corporation | Air conditioner device with a removable driver electrode |
| US7285155B2 (en) | 2004-07-23 | 2007-10-23 | Taylor Charles E | Air conditioner device with enhanced ion output production features |
| KR20060055681A (ko) * | 2004-11-18 | 2006-05-24 | 삼성전자주식회사 | 이온빔 보조 스퍼터링 증착장치 |
| US7494852B2 (en) * | 2005-01-06 | 2009-02-24 | International Business Machines Corporation | Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits |
| US7102139B2 (en) * | 2005-01-27 | 2006-09-05 | Varian Semiconductor Equipment Associates, Inc. | Source arc chamber for ion implanter having repeller electrode mounted to external insulator |
| US7488958B2 (en) * | 2005-03-08 | 2009-02-10 | Axcelis Technologies, Inc. | High conductance ion source |
| JP3758667B1 (ja) * | 2005-05-17 | 2006-03-22 | 日新イオン機器株式会社 | イオン源 |
| US7617972B2 (en) | 2005-07-15 | 2009-11-17 | Revolution Money Inc. | System and method for disputing individual items that are the subject of a transaction |
| US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
| US7361915B2 (en) * | 2005-11-30 | 2008-04-22 | Axcelis Technologies, Inc. | Beam current stabilization utilizing gas feed control loop |
| US7833322B2 (en) | 2006-02-28 | 2010-11-16 | Sharper Image Acquisition Llc | Air treatment apparatus having a voltage control device responsive to current sensing |
| US9567666B2 (en) * | 2009-01-12 | 2017-02-14 | Guardian Industries Corp | Apparatus and method for making sputtered films with reduced stress asymmetry |
| JP5343835B2 (ja) * | 2009-12-10 | 2013-11-13 | 日新イオン機器株式会社 | 反射電極構造体及びイオン源 |
| US8319410B2 (en) * | 2009-12-29 | 2012-11-27 | Ion Technology Solutions, Llc | Cathode ion source |
| EP2561540A4 (en) | 2010-04-09 | 2014-06-11 | E A Fischione Instr Inc | IMPROVED ION SOURCE |
| US8253334B2 (en) * | 2010-07-19 | 2012-08-28 | Ion Technology Solutions, Llc | Ion source |
| US20120048723A1 (en) * | 2010-08-24 | 2012-03-01 | Varian Semiconductor Equipment Associates, Inc. | Sputter target feed system |
| JP5317038B2 (ja) * | 2011-04-05 | 2013-10-16 | 日新イオン機器株式会社 | イオン源及び反射電極構造体 |
| CN102867719A (zh) * | 2011-07-05 | 2013-01-09 | 北京中科信电子装备有限公司 | 一种离子源的绝缘装置 |
| US9396902B2 (en) * | 2012-05-22 | 2016-07-19 | Varian Semiconductor Equipment Associates, Inc. | Gallium ION source and materials therefore |
| US20140097752A1 (en) * | 2012-10-09 | 2014-04-10 | Varian Semiconductor Equipment Associates, Inc. | Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield |
| US9865422B2 (en) | 2013-03-15 | 2018-01-09 | Nissin Ion Equipment Co., Ltd. | Plasma generator with at least one non-metallic component |
| US9006689B2 (en) * | 2013-03-26 | 2015-04-14 | Ion Technology Solutions, Llc | Source bushing shielding |
| US9543110B2 (en) * | 2013-12-20 | 2017-01-10 | Axcelis Technologies, Inc. | Reduced trace metals contamination ion source for an ion implantation system |
| KR101952698B1 (ko) * | 2014-10-27 | 2019-02-28 | 엔테그리스, 아이엔씨. | 이온 주입 방법 및 장치 |
| KR101730025B1 (ko) * | 2015-04-01 | 2017-04-26 | (주)거성 | 이온발생장치 |
| US9922795B2 (en) * | 2015-07-27 | 2018-03-20 | Varian Semiconductor Equipment Associates, Inc. | High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture |
| US9818570B2 (en) * | 2015-10-23 | 2017-11-14 | Varian Semiconductor Equipment Associates, Inc. | Ion source for multiple charged species |
| US9824846B2 (en) * | 2016-01-27 | 2017-11-21 | Varian Semiconductor Equipment Associates, Inc. | Dual material repeller |
| US10600611B2 (en) * | 2017-12-12 | 2020-03-24 | Applied Materials, Inc. | Ion source crucible for solid feed materials |
| US10892137B2 (en) | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
| US11404254B2 (en) | 2018-09-19 | 2022-08-02 | Varian Semiconductor Equipment Associates, Inc. | Insertable target holder for solid dopant materials |
| EP3895199A4 (en) * | 2018-12-15 | 2022-09-14 | Entegris, Inc. | FLUORIDE ION IMPLANTATION SYSTEM WITH NON-TENSION MATERIALS AND METHODS OF USE |
| JP2020173984A (ja) * | 2019-04-11 | 2020-10-22 | 株式会社アルバック | イオン源及びイオン注入装置並びにマグネシウムイオン生成方法 |
| US11170973B2 (en) | 2019-10-09 | 2021-11-09 | Applied Materials, Inc. | Temperature control for insertable target holder for solid dopant materials |
| US10957509B1 (en) | 2019-11-07 | 2021-03-23 | Applied Materials, Inc. | Insertable target holder for improved stability and performance for solid dopant materials |
| US11521821B2 (en) | 2021-04-06 | 2022-12-06 | Axcelis Technologies, Inc. | Ion source repeller |
| US11854760B2 (en) | 2021-06-21 | 2023-12-26 | Applied Materials, Inc. | Crucible design for liquid metal in an ion source |
| CN117995632B (zh) * | 2024-01-29 | 2025-05-09 | 香港科技大学(广州) | 离子源、离子注入装置和离子注入方法 |
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| US4016421A (en) | 1975-02-13 | 1977-04-05 | E. I. Du Pont De Nemours And Company | Analytical apparatus with variable energy ion beam source |
| US4166952A (en) * | 1978-02-24 | 1979-09-04 | E. I. Du Pont De Nemours And Company | Method and apparatus for the elemental analysis of solids |
| JPH06101307B2 (ja) * | 1987-01-16 | 1994-12-12 | 松下電器産業株式会社 | 金属イオン源 |
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| JP2000223039A (ja) * | 1999-01-29 | 2000-08-11 | Sony Corp | イオン注入装置のイオン源 |
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| US6583544B1 (en) * | 2000-08-07 | 2003-06-24 | Axcelis Technologies, Inc. | Ion source having replaceable and sputterable solid source material |
-
2000
- 2000-08-07 US US09/633,322 patent/US6583544B1/en not_active Expired - Lifetime
-
2001
- 2001-07-31 EP EP01306533A patent/EP1220271A3/en not_active Withdrawn
- 2001-08-01 JP JP2001233658A patent/JP5212760B2/ja not_active Expired - Lifetime
- 2001-08-07 TW TW090119229A patent/TW504759B/zh not_active IP Right Cessation
- 2001-08-07 KR KR1020010047375A patent/KR100579379B1/ko not_active Expired - Fee Related
-
2003
- 2003-03-11 US US10/386,262 patent/US6768121B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI581295B (zh) * | 2012-03-22 | 2017-05-01 | 住友重機械離子技術有限公司 | 離子源裝置及離子束產生方法 |
| CN105719927A (zh) * | 2014-12-23 | 2016-06-29 | 汉辰科技股份有限公司 | 离子源 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100579379B1 (ko) | 2006-05-12 |
| JP2002117780A (ja) | 2002-04-19 |
| JP5212760B2 (ja) | 2013-06-19 |
| EP1220271A2 (en) | 2002-07-03 |
| US6768121B2 (en) | 2004-07-27 |
| EP1220271A3 (en) | 2003-11-26 |
| US20040000651A1 (en) | 2004-01-01 |
| KR20020012515A (ko) | 2002-02-16 |
| US6583544B1 (en) | 2003-06-24 |
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