JP5211543B2 - ウエーハ支持治具およびこれを備えた縦型熱処理用ボートならびにウエーハ支持治具の製造方法 - Google Patents
ウエーハ支持治具およびこれを備えた縦型熱処理用ボートならびにウエーハ支持治具の製造方法 Download PDFInfo
- Publication number
- JP5211543B2 JP5211543B2 JP2007120922A JP2007120922A JP5211543B2 JP 5211543 B2 JP5211543 B2 JP 5211543B2 JP 2007120922 A JP2007120922 A JP 2007120922A JP 2007120922 A JP2007120922 A JP 2007120922A JP 5211543 B2 JP5211543 B2 JP 5211543B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer support
- support jig
- support surface
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010438 heat treatment Methods 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 33
- 235000012431 wafers Nutrition 0.000 claims description 252
- 239000000463 material Substances 0.000 claims description 55
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 35
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- 239000010453 quartz Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 2
- 239000002585 base Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000000243 solution Substances 0.000 description 20
- 230000035882 stress Effects 0.000 description 18
- 238000000227 grinding Methods 0.000 description 12
- 238000005488 sandblasting Methods 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000011863 silicon-based powder Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004854 X-ray topography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000003349 gelling agent Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229920000609 methyl cellulose Polymers 0.000 description 2
- 239000001923 methylcellulose Substances 0.000 description 2
- 235000010981 methylcellulose Nutrition 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49885—Assembling or joining with coating before or during assembling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49947—Assembling or joining by applying separate fastener
- Y10T29/49966—Assembling or joining by applying separate fastener with supplemental joining
- Y10T29/4997—At least one part nonmetallic
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007120922A JP5211543B2 (ja) | 2007-05-01 | 2007-05-01 | ウエーハ支持治具およびこれを備えた縦型熱処理用ボートならびにウエーハ支持治具の製造方法 |
US12/450,663 US8506712B2 (en) | 2007-05-01 | 2008-04-14 | Wafer support jig, vertical heat treatment boat including wafer support jig, and method for manufacturing wafer support jig |
KR1020097022939A KR101376489B1 (ko) | 2007-05-01 | 2008-04-14 | 웨이퍼 지지 지그, 및 이를 구비한 종형 열처리용 보트 그리고 웨이퍼 지지 지그의 제조 방법 |
DE112008001108.7T DE112008001108B4 (de) | 2007-05-01 | 2008-04-14 | Wafer-Halterung, vertikales Wärmebehandlungsschiffchen, welches eine Wafer-Halterung einschliesst, sowie Verfahren für die Herstellung einer Wafer-Halterung |
PCT/JP2008/000977 WO2008136181A1 (ja) | 2007-05-01 | 2008-04-14 | ウエーハ支持治具およびこれを備えた縦型熱処理用ボートならびにウエーハ支持治具の製造方法 |
TW97114269A TWI471970B (zh) | 2007-05-01 | 2008-04-18 | A wafer-supporting jig and a method for manufacturing a crystal tube for a vertical type heat treatment and a wafer support |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007120922A JP5211543B2 (ja) | 2007-05-01 | 2007-05-01 | ウエーハ支持治具およびこれを備えた縦型熱処理用ボートならびにウエーハ支持治具の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008277619A JP2008277619A (ja) | 2008-11-13 |
JP5211543B2 true JP5211543B2 (ja) | 2013-06-12 |
Family
ID=39943302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007120922A Active JP5211543B2 (ja) | 2007-05-01 | 2007-05-01 | ウエーハ支持治具およびこれを備えた縦型熱処理用ボートならびにウエーハ支持治具の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8506712B2 (ko) |
JP (1) | JP5211543B2 (ko) |
KR (1) | KR101376489B1 (ko) |
DE (1) | DE112008001108B4 (ko) |
TW (1) | TWI471970B (ko) |
WO (1) | WO2008136181A1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5071217B2 (ja) * | 2008-04-17 | 2012-11-14 | 信越半導体株式会社 | 縦型熱処理用ボートおよびそれを用いたシリコンウエーハの熱処理方法 |
KR101039151B1 (ko) | 2008-12-23 | 2011-06-07 | 주식회사 테라세미콘 | 보트 |
JP5527902B2 (ja) * | 2010-09-30 | 2014-06-25 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP6086056B2 (ja) * | 2013-11-26 | 2017-03-01 | 信越半導体株式会社 | 熱処理方法 |
CN105070677A (zh) * | 2015-09-11 | 2015-11-18 | 南通皋鑫电子股份有限公司 | 一种硅片pn扩散用碳化硅舟 |
JP6469046B2 (ja) * | 2016-07-15 | 2019-02-13 | クアーズテック株式会社 | 縦型ウエハボート |
CN113564719B (zh) * | 2021-07-26 | 2023-04-21 | 河北天达晶阳半导体技术股份有限公司 | 一种碳化硅晶体的二次退火方法 |
CN114823441B (zh) * | 2022-06-28 | 2022-09-02 | 深圳市星国华先进装备科技有限公司 | 一种针测机传输机构晶圆防滑出保护装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH046826A (ja) * | 1990-04-24 | 1992-01-10 | Tokyo Electron Ltd | 熱処理装置 |
JP3328763B2 (ja) | 1995-10-30 | 2002-09-30 | エヌティティエレクトロニクス株式会社 | 縦型ウエハボートのウエハ支持構造 |
JPH09283455A (ja) | 1996-04-17 | 1997-10-31 | Tekunisuko:Kk | 縦型ウエーハボート |
JP3511466B2 (ja) * | 1998-05-22 | 2004-03-29 | 東芝セラミックス株式会社 | 半導体ウェーハ熱処理用部材およびこれを用いた治具 |
JP4003906B2 (ja) | 1999-03-19 | 2007-11-07 | コバレントマテリアル株式会社 | シリコン単結晶半導体ウエハ加熱処理用治具及びこれを用いたシリコン単結晶半導体ウエハ加熱処理用装置 |
JP2002043239A (ja) * | 2000-07-24 | 2002-02-08 | Toshiba Ceramics Co Ltd | 半導体ウェーハ熱処理用治具およびその製造方法 |
JP2004063617A (ja) * | 2002-07-26 | 2004-02-26 | Sumitomo Mitsubishi Silicon Corp | シリコンウエーハの熱処理用治具 |
JP5177944B2 (ja) | 2005-05-12 | 2013-04-10 | 信越石英株式会社 | シリカガラス物品の製造方法。 |
JP5050363B2 (ja) * | 2005-08-12 | 2012-10-17 | 株式会社Sumco | 半導体シリコン基板用熱処理治具およびその製作方法 |
JP5089874B2 (ja) * | 2005-09-12 | 2012-12-05 | トーカロ株式会社 | プラズマ処理装置用部材およびその製造方法 |
-
2007
- 2007-05-01 JP JP2007120922A patent/JP5211543B2/ja active Active
-
2008
- 2008-04-14 WO PCT/JP2008/000977 patent/WO2008136181A1/ja active Application Filing
- 2008-04-14 DE DE112008001108.7T patent/DE112008001108B4/de active Active
- 2008-04-14 US US12/450,663 patent/US8506712B2/en active Active
- 2008-04-14 KR KR1020097022939A patent/KR101376489B1/ko active IP Right Grant
- 2008-04-18 TW TW97114269A patent/TWI471970B/zh active
Also Published As
Publication number | Publication date |
---|---|
DE112008001108T5 (de) | 2010-04-01 |
DE112008001108B4 (de) | 2022-03-31 |
US8506712B2 (en) | 2013-08-13 |
JP2008277619A (ja) | 2008-11-13 |
KR20100016158A (ko) | 2010-02-12 |
WO2008136181A1 (ja) | 2008-11-13 |
TWI471970B (zh) | 2015-02-01 |
US20100129761A1 (en) | 2010-05-27 |
KR101376489B1 (ko) | 2014-03-25 |
TW200908199A (en) | 2009-02-16 |
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