JP5210656B2 - 記憶素子及びその作製方法 - Google Patents

記憶素子及びその作製方法 Download PDF

Info

Publication number
JP5210656B2
JP5210656B2 JP2008039487A JP2008039487A JP5210656B2 JP 5210656 B2 JP5210656 B2 JP 5210656B2 JP 2008039487 A JP2008039487 A JP 2008039487A JP 2008039487 A JP2008039487 A JP 2008039487A JP 5210656 B2 JP5210656 B2 JP 5210656B2
Authority
JP
Japan
Prior art keywords
conductive layer
conductive
electrode
layer
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008039487A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008244453A5 (https=
JP2008244453A (ja
Inventor
吉晴 平形
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008039487A priority Critical patent/JP5210656B2/ja
Publication of JP2008244453A publication Critical patent/JP2008244453A/ja
Publication of JP2008244453A5 publication Critical patent/JP2008244453A5/ja
Application granted granted Critical
Publication of JP5210656B2 publication Critical patent/JP5210656B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2008039487A 2007-02-26 2008-02-21 記憶素子及びその作製方法 Expired - Fee Related JP5210656B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008039487A JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007045558 2007-02-26
JP2007045558 2007-02-26
JP2008039487A JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

Publications (3)

Publication Number Publication Date
JP2008244453A JP2008244453A (ja) 2008-10-09
JP2008244453A5 JP2008244453A5 (https=) 2011-02-17
JP5210656B2 true JP5210656B2 (ja) 2013-06-12

Family

ID=39715698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008039487A Expired - Fee Related JP5210656B2 (ja) 2007-02-26 2008-02-21 記憶素子及びその作製方法

Country Status (3)

Country Link
US (3) US8283724B2 (https=)
JP (1) JP5210656B2 (https=)
CN (1) CN101257088B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101485926B1 (ko) * 2007-02-02 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
GB2543528B (en) 2015-10-20 2020-01-15 Advanced Risc Mach Ltd Memory circuit
CN106057823B (zh) * 2016-07-29 2019-05-10 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
US10833162B2 (en) * 2018-08-14 2020-11-10 Pawan Tyagi Trenched bottom electrode and liftoff based molecular devices
US11621345B2 (en) * 2018-08-14 2023-04-04 Pawan Tyagi Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259564A (ja) 1988-04-08 1989-10-17 Mitsubishi Electric Corp 電界効果型トランジスタ
JPH05202356A (ja) 1991-09-11 1993-08-10 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
JP3501416B2 (ja) 1994-04-28 2004-03-02 忠弘 大見 半導体装置
US5583819A (en) 1995-01-27 1996-12-10 Single Chip Holdings, Inc. Apparatus and method of use of radiofrequency identification tags
JP3401356B2 (ja) 1995-02-21 2003-04-28 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルとその製造方法
TW329500B (en) 1995-11-14 1998-04-11 Handotai Energy Kenkyusho Kk Electro-optical device
WO1997019468A1 (en) 1995-11-20 1997-05-29 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
WO1997030445A1 (en) 1996-02-16 1997-08-21 Philips Electronics N.V. Write-once read-many electrical memory element of a conjugated polymer or oligomer
US6054809A (en) 1996-08-14 2000-04-25 Add-Vision, Inc. Electroluminescent lamp designs
US6285039B1 (en) 1996-08-19 2001-09-04 Tdk Corporation Organic electroluminescent device
JPH10208883A (ja) 1996-11-20 1998-08-07 Hokuriku Electric Ind Co Ltd 発光装置とその製造方法
US6569544B1 (en) 1997-07-31 2003-05-27 Ecole Polytechnique Federale De Lausanne Electroluminescent device
US5853905A (en) 1997-09-08 1998-12-29 Motorola, Inc. Efficient single layer electroluminescent device
US6307528B1 (en) 1997-12-08 2001-10-23 Hughes Electronics Corporation Contrast organic light-emitting display
US6512271B1 (en) 1998-11-16 2003-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW439387B (en) 1998-12-01 2001-06-07 Sanyo Electric Co Display device
TW543206B (en) 1999-06-28 2003-07-21 Semiconductor Energy Lab EL display device and electronic device
US6312983B1 (en) 1999-10-21 2001-11-06 Promos Technologies, Inc. Etching method for reducing bit line coupling in a DRAM
TW525305B (en) 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
JP2001237380A (ja) 2000-02-25 2001-08-31 Matsushita Electric Ind Co Ltd 可変抵抗素子およびそれを用いた半導体装置
JP2002026277A (ja) 2000-06-30 2002-01-25 Seiko Epson Corp メモリデバイス及びその駆動方法
US7019457B2 (en) 2000-08-03 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having both electrodes formed on the insulating layer
AU2001265068A1 (en) 2000-10-31 2002-05-15 The Regents Of The University Of California Organic bistable device and organic memory cells
EP1397809B1 (en) 2001-05-07 2007-06-27 Advanced Micro Devices, Inc. A memory device with a self-assembled polymer film and method of making the same
US6584029B2 (en) 2001-08-09 2003-06-24 Hewlett-Packard Development Company, L.P. One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells
US6534841B1 (en) 2001-12-14 2003-03-18 Hewlett-Packard Company Continuous antifuse material in memory structure
US7205570B2 (en) 2002-07-19 2007-04-17 Samsung Electronics Co., Ltd. Thin film transistor array panel
JP2004128471A (ja) 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
US7008840B2 (en) * 2002-08-26 2006-03-07 Matsushita Electrical Industrial Co., Ltd. Method for manufacturing semiconductor device with capacitor elements
CA2499965C (en) 2002-09-30 2013-03-19 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US6737364B2 (en) 2002-10-07 2004-05-18 International Business Machines Corporation Method for fabricating crystalline-dielectric thin films and devices formed using same
CN100380596C (zh) 2003-04-25 2008-04-09 株式会社半导体能源研究所 液滴排出装置、图案的形成方法及半导体装置的制造方法
JP3788467B2 (ja) 2003-05-28 2006-06-21 セイコーエプソン株式会社 パターン形成方法、デバイス及びデバイスの製造方法、電気光学装置、電子機器並びにアクティブマトリクス基板の製造方法
US6977389B2 (en) 2003-06-02 2005-12-20 Advanced Micro Devices, Inc. Planar polymer memory device
US20050006640A1 (en) 2003-06-26 2005-01-13 Jackson Warren B. Polymer-based memory element
US7116573B2 (en) 2003-07-18 2006-10-03 Nec Corporation Switching element method of driving switching element rewritable logic integrated circuit and memory
JP3923462B2 (ja) 2003-10-02 2007-05-30 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP4194464B2 (ja) 2003-10-06 2008-12-10 シャープ株式会社 メモリ素子およびその製造方法
WO2005041310A1 (en) 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same, and television receiver
US8101467B2 (en) 2003-10-28 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver
US7015504B2 (en) 2003-11-03 2006-03-21 Advanced Micro Devices, Inc. Sidewall formation for high density polymer memory element array
US7184289B2 (en) 2003-11-12 2007-02-27 Intel Corporation Parallel electrode memory
JP2005183619A (ja) 2003-12-18 2005-07-07 Canon Inc 不揮発メモリ装置
US7358113B2 (en) 2004-01-28 2008-04-15 Zettacore, Inc. Processing systems and methods for molecular memory
JP3933138B2 (ja) 2004-03-01 2007-06-20 住友電気工業株式会社 インクジェット用金属インク
KR101215119B1 (ko) 2004-03-01 2012-12-24 스미토모덴키고교가부시키가이샤 금속콜로이드용액 및 잉크젯용 금속잉크
WO2005096380A1 (en) 2004-04-02 2005-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US20050278022A1 (en) * 2004-06-14 2005-12-15 St. Jude Medical, Inc. Annuloplasty prostheses with improved anchoring structures, and related methods
US20060028895A1 (en) 2004-08-09 2006-02-09 Carl Taussig Silver island anti-fuse
US7247529B2 (en) 2004-08-30 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
EP2348460B1 (en) 2004-10-18 2014-04-23 Semiconductor Energy Laboratory Co, Ltd. Organic anti fuse memory
CN101044624A (zh) 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
KR101219749B1 (ko) 2004-10-22 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US7795617B2 (en) 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
WO2006051996A1 (en) 2004-11-11 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7688624B2 (en) 2004-11-26 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP1817796B1 (en) 2004-11-30 2013-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN100565900C (zh) 2004-12-03 2009-12-02 株式会社半导体能源研究所 半导体器件
KR101219750B1 (ko) 2004-12-07 2013-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
US8314417B2 (en) 2004-12-07 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US7919772B2 (en) 2004-12-14 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20060070716A (ko) 2004-12-21 2006-06-26 한국전자통신연구원 유기 메모리 소자 및 제조 방법
KR101114770B1 (ko) 2004-12-24 2012-03-05 삼성전자주식회사 비휘발성 유기 메모리 소자의 제조 방법 및 그에 의해수득된 비휘발성 유기 메모리 소자
US7813160B2 (en) 2005-01-11 2010-10-12 The Trustees Of The University Of Pennsylvania Nanocrystal quantum dot memory devices
WO2006080550A1 (en) 2005-01-31 2006-08-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP2006237593A (ja) 2005-01-31 2006-09-07 Semiconductor Energy Lab Co Ltd 記憶装置および半導体装置
KR101078150B1 (ko) 2005-03-17 2011-10-28 삼성전자주식회사 유기-무기 복합체 다공성 물질을 이용한 비휘발성 나노 채널 메모리 소자
US7745498B2 (en) 2005-04-13 2010-06-29 Nanosys, Inc. Nanowire dispersion compositions and uses thereof
US7679107B2 (en) * 2005-04-28 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Memory device that utilizes organic layer with a compound that can photoisomerize between conductive layers; at least one of which is light transmitting
JP4727495B2 (ja) * 2005-04-28 2011-07-20 株式会社半導体エネルギー研究所 記憶装置およびその作製方法
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
EP1886377A4 (en) * 2005-05-31 2014-10-29 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
US8188461B2 (en) 2005-05-31 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Organic memory device
JP4704959B2 (ja) * 2005-05-31 2011-06-22 株式会社半導体エネルギー研究所 商品の管理方法および危険物の管理方法
US7660145B2 (en) 2005-07-01 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
KR101369864B1 (ko) 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
WO2008009779A1 (en) 2006-07-21 2008-01-24 Valtion Teknillinen Tutkimuskeskus Method for manufacturing conductors and semiconductors
WO2008059940A1 (en) 2006-11-17 2008-05-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and method for manufacturing the same, and semiconductor device
JP5202356B2 (ja) 2009-01-27 2013-06-05 三甲株式会社 折り畳みコンテナー

Also Published As

Publication number Publication date
US20080205132A1 (en) 2008-08-28
CN101257088A (zh) 2008-09-03
US20130010534A1 (en) 2013-01-10
CN101257088B (zh) 2011-10-05
JP2008244453A (ja) 2008-10-09
US8753967B2 (en) 2014-06-17
US8283724B2 (en) 2012-10-09
US8431997B2 (en) 2013-04-30
US20130217201A1 (en) 2013-08-22

Similar Documents

Publication Publication Date Title
JP5459916B2 (ja) 半導体装置
TWI431827B (zh) 半導體裝置和其製造方法
KR101371264B1 (ko) 기억 소자 및 반도체 장치
US8687407B2 (en) Semiconductor device including storage device and method for driving the same
US7868320B2 (en) Semiconductor device and manufacturing method thereof
JP5210656B2 (ja) 記憶素子及びその作製方法
KR20090083362A (ko) 반도체 디바이스 및 이의 제작 방법
US7358590B2 (en) Semiconductor device and driving method thereof
CN101777522A (zh) 半导体器件及用于制造半导体器件的方法
JP2008112988A (ja) 半導体装置およびその作製方法
KR101485926B1 (ko) 기억장치
JP5297591B2 (ja) 半導体装置
JP4932329B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101224

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130131

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130131

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130219

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130225

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160301

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160301

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees