JP5199376B2 - アルミニウム基板から規則性多孔質構造を製造する方法 - Google Patents
アルミニウム基板から規則性多孔質構造を製造する方法 Download PDFInfo
- Publication number
- JP5199376B2 JP5199376B2 JP2010530531A JP2010530531A JP5199376B2 JP 5199376 B2 JP5199376 B2 JP 5199376B2 JP 2010530531 A JP2010530531 A JP 2010530531A JP 2010530531 A JP2010530531 A JP 2010530531A JP 5199376 B2 JP5199376 B2 JP 5199376B2
- Authority
- JP
- Japan
- Prior art keywords
- porous structure
- thickness
- polishing
- anodization
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010410 layer Substances 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 73
- 238000002048 anodisation reaction Methods 0.000 claims abstract description 63
- 239000002344 surface layer Substances 0.000 claims abstract description 36
- 238000003754 machining Methods 0.000 claims abstract description 20
- 238000005498 polishing Methods 0.000 claims description 89
- 238000011282 treatment Methods 0.000 claims description 49
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 36
- 238000007743 anodising Methods 0.000 claims description 35
- 239000011148 porous material Substances 0.000 claims description 33
- 239000000126 substance Substances 0.000 claims description 32
- 239000000725 suspension Substances 0.000 claims description 32
- 238000007254 oxidation reaction Methods 0.000 claims description 26
- 239000002245 particle Substances 0.000 claims description 26
- 230000003647 oxidation Effects 0.000 claims description 25
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 18
- 229910003460 diamond Inorganic materials 0.000 claims description 18
- 239000010432 diamond Substances 0.000 claims description 18
- 239000004744 fabric Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 239000003792 electrolyte Substances 0.000 claims description 8
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 8
- 239000011707 mineral Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000008151 electrolyte solution Substances 0.000 claims description 4
- 239000008346 aqueous phase Substances 0.000 claims description 2
- 150000004715 keto acids Chemical class 0.000 claims 1
- 239000000243 solution Substances 0.000 description 23
- 230000004888 barrier function Effects 0.000 description 18
- 238000004090 dissolution Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 238000004626 scanning electron microscopy Methods 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 230000001788 irregular Effects 0.000 description 9
- 238000005192 partition Methods 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 241000256856 Vespidae Species 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- -1 argon ion Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 231100000481 chemical toxicant Toxicity 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012362 glacial acetic acid Substances 0.000 description 2
- 230000033444 hydroxylation Effects 0.000 description 2
- 238000005805 hydroxylation reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- 229910000497 Amalgam Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- RCTYPNKXASFOBE-UHFFFAOYSA-M chloromercury Chemical compound [Hg]Cl RCTYPNKXASFOBE-UHFFFAOYSA-M 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 238000001424 field-emission electron microscopy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000013461 intermediate chemical Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001728 nano-filtration Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007430 reference method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0707540A FR2922899B1 (fr) | 2007-10-26 | 2007-10-26 | Procede de fabrication d'une structure poreuse ordonnee a partir d'un substrat d'aluminium |
FR0707540 | 2007-10-26 | ||
PCT/FR2008/051921 WO2009056744A2 (fr) | 2007-10-26 | 2008-10-23 | Procédé de fabrication d'une structure poreuse ordonnée à partir d'un substrat d'aluminium |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011500969A JP2011500969A (ja) | 2011-01-06 |
JP5199376B2 true JP5199376B2 (ja) | 2013-05-15 |
Family
ID=39474061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010530531A Expired - Fee Related JP5199376B2 (ja) | 2007-10-26 | 2008-10-23 | アルミニウム基板から規則性多孔質構造を製造する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100258445A1 (de) |
EP (1) | EP2207915B1 (de) |
JP (1) | JP5199376B2 (de) |
AT (1) | ATE522640T1 (de) |
ES (1) | ES2372790T3 (de) |
FR (1) | FR2922899B1 (de) |
WO (1) | WO2009056744A2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2003250C2 (en) * | 2009-07-20 | 2011-01-24 | Metal Membranes Com B V | Method for producing a membrane and such membrane. |
EP2433659A3 (de) * | 2010-08-13 | 2014-09-03 | Biotronik AG | Implantat und Verfahren zur Herstellung desselben |
TWI442014B (zh) * | 2010-11-24 | 2014-06-21 | Ind Tech Res Inst | 散熱元件及散熱元件的處理方法 |
KR101701314B1 (ko) * | 2015-07-02 | 2017-02-02 | 고려대학교 산학협력단 | 양극산화된 금속산화물 나노다공성 템플레이트 제작방법 |
KR102443973B1 (ko) * | 2017-12-11 | 2022-09-16 | (주)코미코 | 내부식성 및 절연특성이 우수한 양극산화된 알루미늄 또는 알루미늄 합금 부재의 제조방법 및 표면처리된 반도체 장치 |
JP6584604B1 (ja) * | 2018-07-31 | 2019-10-02 | 株式会社Uacj | アルミニウム部材及びその製造方法 |
US11230786B2 (en) * | 2019-06-17 | 2022-01-25 | Nanopec, Inc. | Nano-porous anodic aluminum oxide membrane for healthcare and biotechnology |
WO2022235722A1 (en) * | 2021-05-04 | 2022-11-10 | Nanopec, Inc. | Controlled pore ceramics chips for high throughput solid state oligonucleotide synthesis |
CN114369402B (zh) * | 2021-12-18 | 2022-10-11 | 佛山市顺德区固得丽涂料有限公司 | 一种铝合金涂层材料 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4225399A (en) * | 1979-04-25 | 1980-09-30 | Setsuo Tomita | High speed aluminum anodizing |
JPS5671821A (en) * | 1979-11-14 | 1981-06-15 | Hitachi Ltd | Substrate for magnetic disc and its manufacture |
DE3421442A1 (de) * | 1983-06-10 | 1984-12-13 | Nippon Light Metal Co. Ltd., Tokio/Tokyo | Verfahren zur herstellung eines magnetischen aufzeichnungsmediums |
JPS60177198A (ja) * | 1984-02-22 | 1985-09-11 | Nippon Sheet Glass Co Ltd | 薄膜状Al↓2O↓3多孔質体の製造方法 |
JPS60231921A (ja) * | 1984-05-01 | 1985-11-18 | Kobe Steel Ltd | 磁気デイスク用基盤の表面処理方法 |
JPS61101946A (ja) * | 1984-10-23 | 1986-05-20 | Kao Corp | メツシユの製造方法 |
JPS62149029A (ja) * | 1985-09-04 | 1987-07-03 | Furukawa Alum Co Ltd | アルマイト磁気デイスク基板とその製造方法 |
JPS63166993A (ja) * | 1986-12-27 | 1988-07-11 | Nippon Light Metal Co Ltd | 磁気デイスク用基板の製造方法 |
JP2645022B2 (ja) * | 1987-08-21 | 1997-08-25 | 株式会社東芝 | 加入者回路 |
US5240590A (en) * | 1989-07-19 | 1993-08-31 | Seagate Technology, Inc. | Process for forming a bearing surface for aluminum alloy |
US5691256A (en) * | 1995-12-28 | 1997-11-25 | Yamamura Glass Co., Ltd. | Glass composition for magnetic disk substrates and magnetic disk substrate |
JP3559920B2 (ja) * | 1996-07-29 | 2004-09-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6359288B1 (en) * | 1997-04-24 | 2002-03-19 | Massachusetts Institute Of Technology | Nanowire arrays |
US6804081B2 (en) * | 2001-05-11 | 2004-10-12 | Canon Kabushiki Kaisha | Structure having pores and its manufacturing method |
US6709929B2 (en) * | 2001-06-25 | 2004-03-23 | North Carolina State University | Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates |
US20050159087A1 (en) * | 2002-10-31 | 2005-07-21 | Hans-Joachim Bartz | Method for the creation of highly lustrous surfaceson aluminum workpieces |
US20040221959A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Anodized substrate support |
JP4603402B2 (ja) * | 2005-03-31 | 2010-12-22 | 富士フイルム株式会社 | 微細構造体およびその製造方法 |
US20060234396A1 (en) * | 2005-04-18 | 2006-10-19 | Fuji Photo Film Co., Ltd. | Method for producing structure |
JP4813925B2 (ja) * | 2006-02-28 | 2011-11-09 | 富士フイルム株式会社 | 微細構造体の製造方法および微細構造体 |
JP4768478B2 (ja) * | 2006-03-17 | 2011-09-07 | 富士フイルム株式会社 | 微細構造体の製造方法および微細構造体 |
US7811180B2 (en) * | 2006-09-25 | 2010-10-12 | Cobra Golf, Inc. | Multi-metal golf clubs |
-
2007
- 2007-10-26 FR FR0707540A patent/FR2922899B1/fr not_active Expired - Fee Related
-
2008
- 2008-10-23 JP JP2010530531A patent/JP5199376B2/ja not_active Expired - Fee Related
- 2008-10-23 WO PCT/FR2008/051921 patent/WO2009056744A2/fr active Application Filing
- 2008-10-23 EP EP08844577A patent/EP2207915B1/de not_active Not-in-force
- 2008-10-23 ES ES08844577T patent/ES2372790T3/es active Active
- 2008-10-23 AT AT08844577T patent/ATE522640T1/de not_active IP Right Cessation
- 2008-10-23 US US12/739,785 patent/US20100258445A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
ATE522640T1 (de) | 2011-09-15 |
EP2207915A2 (de) | 2010-07-21 |
EP2207915B1 (de) | 2011-08-31 |
FR2922899B1 (fr) | 2010-11-26 |
ES2372790T3 (es) | 2012-01-26 |
JP2011500969A (ja) | 2011-01-06 |
WO2009056744A3 (fr) | 2009-07-30 |
US20100258445A1 (en) | 2010-10-14 |
FR2922899A1 (fr) | 2009-05-01 |
WO2009056744A2 (fr) | 2009-05-07 |
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