JP5197930B2 - 半導体受光素子の製造方法 - Google Patents

半導体受光素子の製造方法 Download PDF

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Publication number
JP5197930B2
JP5197930B2 JP2006182325A JP2006182325A JP5197930B2 JP 5197930 B2 JP5197930 B2 JP 5197930B2 JP 2006182325 A JP2006182325 A JP 2006182325A JP 2006182325 A JP2006182325 A JP 2006182325A JP 5197930 B2 JP5197930 B2 JP 5197930B2
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JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
layer
light receiving
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006182325A
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English (en)
Japanese (ja)
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JP2008010776A5 (enExample
JP2008010776A (ja
Inventor
昌博 米田
竜二 山日
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2006182325A priority Critical patent/JP5197930B2/ja
Priority to TW096123757A priority patent/TW200812098A/zh
Priority to US11/771,588 priority patent/US7696593B2/en
Publication of JP2008010776A publication Critical patent/JP2008010776A/ja
Publication of JP2008010776A5 publication Critical patent/JP2008010776A5/ja
Priority to US12/711,881 priority patent/US8105866B2/en
Application granted granted Critical
Publication of JP5197930B2 publication Critical patent/JP5197930B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

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  • Light Receiving Elements (AREA)
JP2006182325A 2006-06-30 2006-06-30 半導体受光素子の製造方法 Expired - Fee Related JP5197930B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006182325A JP5197930B2 (ja) 2006-06-30 2006-06-30 半導体受光素子の製造方法
TW096123757A TW200812098A (en) 2006-06-30 2007-06-29 Semiconductor photo detecting element, manufacturing method of the same, and manufacturing method of optoelectronic integrated circuit
US11/771,588 US7696593B2 (en) 2006-06-30 2007-06-29 PIN-type photo detecting element with three semiconductor layers, and window semiconductor layer having controlled thickness
US12/711,881 US8105866B2 (en) 2006-06-30 2010-02-24 Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006182325A JP5197930B2 (ja) 2006-06-30 2006-06-30 半導体受光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2008010776A JP2008010776A (ja) 2008-01-17
JP2008010776A5 JP2008010776A5 (enExample) 2009-08-06
JP5197930B2 true JP5197930B2 (ja) 2013-05-15

Family

ID=38875728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006182325A Expired - Fee Related JP5197930B2 (ja) 2006-06-30 2006-06-30 半導体受光素子の製造方法

Country Status (3)

Country Link
US (2) US7696593B2 (enExample)
JP (1) JP5197930B2 (enExample)
TW (1) TW200812098A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4693827B2 (ja) * 2007-09-20 2011-06-01 株式会社東芝 半導体装置とその製造方法
DE102008038750A1 (de) * 2008-08-12 2010-02-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US8072041B2 (en) * 2009-04-08 2011-12-06 Finisar Corporation Passivated optical detectors with full protection layer
JP2011035114A (ja) * 2009-07-31 2011-02-17 Renesas Electronics Corp メサ型フォトダイオード及びその製造方法
JP5982711B2 (ja) * 2011-04-28 2016-08-31 住友電工デバイス・イノベーション株式会社 半導体受光装置
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
RU2644992C2 (ru) * 2016-05-31 2018-02-15 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления фотопреобразователя
JP7275567B2 (ja) * 2018-12-26 2023-05-18 富士通株式会社 赤外線検出器及びその製造方法、撮像素子、撮像システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
JPH07118548B2 (ja) * 1986-04-28 1995-12-18 住友電気工業株式会社 ▲ｉｉｉ▼−ｖ族多元化合物半導体ｐｉｎフオトダイオ−ド
JPH07123170B2 (ja) * 1990-08-07 1995-12-25 光計測技術開発株式会社 受光素子
EP0725447B1 (en) * 1995-02-02 2007-11-14 Sumitomo Electric Industries, Ltd. Pin type light-receiving device and its fabrication process
JP4136009B2 (ja) * 1995-02-02 2008-08-20 住友電気工業株式会社 ｐｉｎ型受光素子、およびｐｉｎ型受光素子の製造方法
US6065418A (en) * 1996-02-08 2000-05-23 Quantum Group, Inc. Sequence of selective emitters matched to a sequence of photovoltaic collectors
JP2001144278A (ja) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co Ltd 受光素子アレイ
JP5011607B2 (ja) * 2001-04-16 2012-08-29 住友電気工業株式会社 受光素子
JP4765211B2 (ja) * 2001-07-06 2011-09-07 住友電気工業株式会社 ｐｉｎ型受光素子
JP4084958B2 (ja) * 2002-05-24 2008-04-30 日本オプネクスト株式会社 半導体受光装置の製造方法
US6919219B2 (en) * 2002-11-21 2005-07-19 Texas Instruments Incorporated Photon-blocking layer
JP2005129689A (ja) * 2003-10-23 2005-05-19 Sumitomo Electric Ind Ltd 半導体受光素子及び光受信モジュール
JP5052007B2 (ja) * 2005-12-28 2012-10-17 住友電工デバイス・イノベーション株式会社 半導体装置

Also Published As

Publication number Publication date
US20100151620A1 (en) 2010-06-17
US7696593B2 (en) 2010-04-13
JP2008010776A (ja) 2008-01-17
US8105866B2 (en) 2012-01-31
US20080001245A1 (en) 2008-01-03
TW200812098A (en) 2008-03-01

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