JP5188576B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP5188576B2
JP5188576B2 JP2010518550A JP2010518550A JP5188576B2 JP 5188576 B2 JP5188576 B2 JP 5188576B2 JP 2010518550 A JP2010518550 A JP 2010518550A JP 2010518550 A JP2010518550 A JP 2010518550A JP 5188576 B2 JP5188576 B2 JP 5188576B2
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substrate
housing
substrate holder
radiation beam
support surface
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Japanese (ja)
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JP2010534946A5 (enExample
JP2010534946A (ja
Inventor
ブリーカー，アーノ，ジャン
メール，アシュウィン，ロデウィク，ヘンドリカス，ヨハネス ヴァン
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エーエスエムエル ネザーランズ ビー．ブイ．
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2010518550A 2007-07-30 2008-07-25 リソグラフィ装置およびデバイス製造方法 Active JP5188576B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/882,081 US7894037B2 (en) 2007-07-30 2007-07-30 Lithographic apparatus and device manufacturing method
US11/882,081 2007-07-30
PCT/EP2008/006145 WO2009015838A1 (en) 2007-07-30 2008-07-25 Lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2010534946A JP2010534946A (ja) 2010-11-11
JP2010534946A5 JP2010534946A5 (enExample) 2011-09-08
JP5188576B2 true JP5188576B2 (ja) 2013-04-24

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JP2010518550A Active JP5188576B2 (ja) 2007-07-30 2008-07-25 リソグラフィ装置およびデバイス製造方法

Country Status (7)

Country Link
US (1) US7894037B2 (enExample)
JP (1) JP5188576B2 (enExample)
KR (1) KR20100053591A (enExample)
CN (2) CN101765811B (enExample)
NL (1) NL1035732A1 (enExample)
TW (1) TW200916976A (enExample)
WO (1) WO2009015838A1 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100763532B1 (ko) * 2006-08-17 2007-10-05 삼성전자주식회사 웨이퍼 지지장치, 웨이퍼 노광 장치 및 웨이퍼 지지방법
NL1036618A1 (nl) * 2008-03-24 2009-09-25 Asml Netherlands Bv Encoder-type measurement system, lithograpic apparatus and method to detect an error on or in a grid or grating of an encoder-type measurement system.
KR20100126775A (ko) * 2008-04-03 2010-12-02 칼 짜이스 에스엠테 아게 세척 모듈 및 세척 모듈을 갖는 ｅｕｖ 리소그래피 장치
NL1036832A1 (nl) * 2008-04-15 2009-10-19 Asml Netherlands Bv Lithographic apparatus comprising an internal sensor and a mini-reactor, and method for treating a sensing surface of an internal sensor of a lithographic apparatus.
NL2005739A (en) * 2009-12-22 2011-06-23 Asml Netherlands Bv Object with an improved suitability for a plasma cleaning treatment.
DE102010044970A1 (de) * 2010-09-10 2011-12-22 Carl Zeiss Smt Gmbh Reinigungsmodul für Komponenten von Halbleiterlithographieanlagen und Halbleiterlithographieanlagen
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法
JP5703841B2 (ja) * 2011-02-28 2015-04-22 凸版印刷株式会社 反射型マスク
US9221081B1 (en) 2011-08-01 2015-12-29 Novellus Systems, Inc. Automated cleaning of wafer plating assembly
US10066311B2 (en) 2011-08-15 2018-09-04 Lam Research Corporation Multi-contact lipseals and associated electroplating methods
US9228270B2 (en) 2011-08-15 2016-01-05 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
CN104272438B (zh) 2012-03-28 2018-01-12 诺发系统公司 用于清洁电镀衬底保持器的方法和装置
TWI609100B (zh) 2012-03-30 2017-12-21 諾發系統有限公司 使用反向電流除鍍以清洗電鍍基板夾持具
US9746427B2 (en) * 2013-02-15 2017-08-29 Novellus Systems, Inc. Detection of plating on wafer holding apparatus
US10416092B2 (en) 2013-02-15 2019-09-17 Lam Research Corporation Remote detection of plating on wafer holding apparatus
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
US9539622B2 (en) * 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
WO2015154917A1 (en) * 2014-04-09 2015-10-15 Asml Netherlands B.V. Apparatus for cleaning an object
CN104226637B (zh) * 2014-07-18 2016-06-01 中国科学院长春光学精密机械与物理研究所 用于清洗受污染光学元件的氢原子收集装置与清洗方法
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US9888554B2 (en) * 2016-01-21 2018-02-06 Asml Netherlands B.V. System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector
JP6695750B2 (ja) * 2016-07-04 2020-05-20 株式会社荏原製作所 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置
KR102617773B1 (ko) * 2017-06-01 2023-12-22 에이에스엠엘 네델란즈 비.브이. 입자 제거 장치 및 관련 시스템
TW201920946A (zh) * 2017-06-29 2019-06-01 美商蘭姆研究公司 晶圓固持設備上電鍍之遠程偵測
EP3447581A1 (en) * 2017-08-23 2019-02-27 ASML Netherlands B.V. A clear-out tool, a lithographic apparatus and a device manufacturing method
WO2019081174A1 (en) * 2017-10-27 2019-05-02 Asml Holding N.V. BURLS HAVING MODIFIED SURFACE TOPOGRAPHY FOR HOLDING AN OBJECT IN LITHOGRAPHIC APPLICATIONS
US11448955B2 (en) 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
US11360384B2 (en) * 2018-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating and servicing a photomask
CN112955822B (zh) * 2018-11-09 2024-10-11 Asml控股股份有限公司 利用具有可控几何形状和组成的清洁衬底进行刻蚀支撑件清洁
DE102018221191A1 (de) * 2018-12-07 2020-06-10 Carl Zeiss Smt Gmbh Optisches Element zur Reflexion von VUV-Strahlung und optische Anordnung
TWI897405B (zh) 2019-03-25 2025-09-11 日商亞多納富有限公司 半導體製造系統、其控制方法及控制該系統的電腦程式
CN110161808B (zh) * 2019-05-09 2022-02-22 上海华力微电子有限公司 光栅尺清洁装置和方法、光刻机
US11638938B2 (en) * 2019-06-10 2023-05-02 Kla Corporation In situ process chamber chuck cleaning by cleaning substrate
JP7401396B2 (ja) * 2020-06-04 2023-12-19 キヤノン株式会社 インプリント装置、物品の製造方法、及びインプリント装置のための測定方法
CN112139151A (zh) * 2020-09-11 2020-12-29 韩山师范学院 一种大型设备表面清理装置
US11392041B2 (en) * 2020-09-28 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Particle removal device and method
CN114690570B (zh) * 2020-12-29 2025-04-25 上海微电子装备（集团）股份有限公司 光刻机、运动台定位测量系统及其工作方法
EP4068000A1 (en) * 2021-03-30 2022-10-05 ASML Netherlands B.V. Conditioning apparatus and method
CN114200778A (zh) * 2021-06-25 2022-03-18 四川大学 一种极紫外光刻机lpp光源收集镜的等离子体原位清洗结构
US11520246B1 (en) 2021-08-30 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Highly efficient automatic particle cleaner method for EUV systems
CN114454071A (zh) * 2022-02-21 2022-05-10 上海华力微电子有限公司 承载台清洁装置及光刻系统

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3613288B2 (ja) 1994-10-18 2005-01-26 株式会社ニコン 露光装置用のクリーニング装置
US5825470A (en) * 1995-03-14 1998-10-20 Nikon Corporation Exposure apparatus
JP3585606B2 (ja) * 1995-09-19 2004-11-04 アネルバ株式会社 Ｃｖｄ装置の電極装置
US5746928A (en) * 1996-06-03 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd Process for cleaning an electrostatic chuck of a plasma etching apparatus
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
TW484039B (en) 1999-10-12 2002-04-21 Asm Lithography Bv Lithographic projection apparatus and method
JP2001203135A (ja) * 2000-01-20 2001-07-27 Semiconductor Leading Edge Technologies Inc 露光装置のクリーニング方法および露光装置
JP2002280365A (ja) * 2001-03-19 2002-09-27 Applied Materials Inc 静電チャックのクリーニング方法
EP1329773A3 (en) 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
EP1329770A1 (en) * 2002-01-18 2003-07-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2003234265A (ja) * 2002-02-06 2003-08-22 Canon Inc 露光装置
KR100585472B1 (ko) 2002-09-30 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
DE60323927D1 (de) * 2002-12-13 2008-11-20 Asml Netherlands Bv Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1939690A1 (en) 2002-12-13 2008-07-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG115621A1 (en) * 2003-02-24 2005-10-28 Asml Netherlands Bv Method and device for measuring contamination of a surface of a component of a lithographic apparatus
US6919573B2 (en) * 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
CN1791793B (zh) * 2003-05-22 2010-12-15 皇家飞利浦电子股份有限公司 至少一个光学元件的清洁方法和装置
TWI402890B (zh) * 2005-01-24 2013-07-21 尼康股份有限公司 Measurement methods, measurement systems, inspection methods, inspection systems, exposure methods and exposure systems
US7502095B2 (en) * 2005-03-29 2009-03-10 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US8097092B2 (en) * 2005-06-21 2012-01-17 Kninklijke Philips Electronics N.V. Method of cleaning and after treatment of optical surfaces in an irradiation unit
US8317929B2 (en) * 2005-09-16 2012-11-27 Asml Netherlands B.V. Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus
JP2007173344A (ja) * 2005-12-20 2007-07-05 Canon Inc 洗浄方法及び装置、露光装置、並びに、デバイス製造方法
US7504643B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
US20070146658A1 (en) 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US7522263B2 (en) * 2005-12-27 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and method
US7491951B2 (en) * 2005-12-28 2009-02-17 Asml Netherlands B.V. Lithographic apparatus, system and device manufacturing method
US7473908B2 (en) 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface

Also Published As

Publication number Publication date
NL1035732A1 (nl) 2009-02-02
KR20100053591A (ko) 2010-05-20
CN101765811A (zh) 2010-06-30
JP2010534946A (ja) 2010-11-11
US20090033889A1 (en) 2009-02-05
TW200916976A (en) 2009-04-16
WO2009015838A1 (en) 2009-02-05
US7894037B2 (en) 2011-02-22
CN103543614B (zh) 2016-03-09
CN101765811B (zh) 2013-11-20
CN103543614A (zh) 2014-01-29

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